Adaptive tracking spectrum features for endpoint detection

1. A method of controlling polishing, comprising:

polishing a substrate;

monitoring the substrate during polishing with an in-situ monitoring system;

generating a sequence of values from measurements from the in-situ monitoring system, wherein excluding noise the sequence of values changes substantially linearly over a polishing time;

fitting a non-linear function to the sequence of values, the non-linear function being monotonic over the polishing time;

determining a projected time at which the non-linear function reaches a target value; and

determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the projected time.

2. The method of claim 1 , wherein the non-linear function comprises a second order or higher polynomial function.

3. The method of claim 2 , wherein the non-linear function consists of a second order polynomial function.

4. The method of claim 1 , wherein fitting the non-linear function to the sequence of values comprises a Savitzky-Golay method.

5. The method of claim 1 , wherein the in-situ monitoring system comprises a spectrographic monitoring system and further comprising measuring a sequence of spectra of light from the substrate during polishing with the spectrographic monitoring system.

6. The method of claim 5 , further comprising:

for each measured spectrum from the sequence of spectra, finding a best matching reference spectrum from a library having a plurality of reference spectra; and

wherein generating the sequence of values includes, for each best matching reference spectrum, determining a value associated the best matching reference spectrum.

7. The method of claim 6 , wherein the sequence of values comprises a sequence of thicknesses values.

8. The method of claim 5 , further comprising:

for each measured spectrum from the sequence of spectra, finding a position or width of a peak or valley of the measured spectrum to generate a sequence of position or width values; and

wherein the sequence of values is generated from the sequence of position or width values.

9. The method of claim 8 , wherein the sequence of values comprises a sequence of wavelength values of positions of the peak or valley.

10. The method of claim 5 , wherein polishing the substrate comprises polishing a dielectric and/or semiconductor layer.

11. The method of claim 1 , wherein the in-situ monitoring system comprises an eddy current monitoring system, and further comprising generating the sequence of values with the eddy current monitoring system.

12. The method of claim 11 , wherein polishing the substrate comprises polishing a metal layer.

13. The method of claim 1 , further comprising halting the polishing when the non-linear function matches or exceeds a target value.

14. The method of claim 1 , wherein the substrate includes a plurality of zones, and a polishing rate of each zone is independently controllable by an independently variable polishing parameter, and further comprising:

for each zone, generating a sequence of values from measurements from the in-situ monitoring system during polishing;

based on the sequence of values for each zone, adjusting the polishing parameter for at least one zone to adjust the polishing rate of the at least one zone such that the plurality of zones have a smaller thickness difference between zones at the polishing endpoint than without such adjustment.

15. The method of claim 1 , wherein the substrate includes a plurality of zones, and a polishing rate of each zone is independently controllable by an independently variable polishing parameter, and further comprising:

measuring a sequence of spectra from each zone during polishing;

for each zone, generating a sequence of values, including for each measured spectrum of the sequence of spectra, determining a wavelength or width of a peak or valley of a spectral feature; and

based on the sequence of values for each zone, adjusting the polishing parameter for at least one zone to adjust the polishing rate of the at least one zone such that the plurality of zones have a smaller thickness difference between zones at the polishing endpoint than without such adjustment.

16. The method of claim 1 , wherein polishing the substrate comprises polishing a layer that includes polysilicon and/or a dielectric material, and monitoring the substrate comprises monitoring the layer.

17. The method of claim 16 , wherein the layer consists of substantially pure polysilicon.

18. The method of claim 16 , wherein the layer consists of dielectric material.

19. The method of claim 16 , wherein the layer is a combination of polysilicon and dielectric material.

20. A method of controlling polishing, comprising:

polishing a substrate;

measuring a sequence of spectra of light from the substrate during polishing;

generating a sequence of values, including for each measured spectrum of the sequence of spectra, determining a wavelength or width of a peak or valley of a spectra feature, wherein excluding noise the sequence of values changes substantially linearly over a polishing time;

fitting a non-linear function to the sequence of values, the non-linear function being monotonic over the polishing time;

determining a projected time at which the non-linear function reaches a target value; and

determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the projected time.