IP Library Granted Patent US 8,384,168
Granted Patent B2
US 8,384,168 · App. 13/091,997 · Granted Feb 26, 2013

Sensor device with sealing structure

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Quick Facts
Patent No.
US 8,384,168
App. No.
13/091,997
Granted
Feb 26, 2013
Kind
B2
Abstract

Apparatus and related fabrication methods are provided for a sensor device. The sensor device includes a sensor structure including a first portion having a sensing arrangement formed thereon and a second structure. A sealing structure is interposed between the sensor structure and the second structure, wherein the sealing structure surrounds the first portion of the sensor structure. The sealing structure establishes a fixed reference pressure on a first side of the first portion, and an opposing side of the first portion is exposed to an ambient pressure.

Claims (47)

1. A sensor device comprising:

a sensor structure including a first portion having a sensing arrangement formed thereon;

control circuitry to determine a pressure metric indicative of the ambient pressure based on an electrical signal from the sensing arrangement;

a second structure comprising an integrated circuit die having the control circuitry formed thereon; and

a sealing structure interposed between the sensor structure and the second structure, the sealing structure surrounding the first portion of the sensor structure to establish a fixed reference pressure on a first side of the first portion, wherein a second side of the first portion is exposed to an ambient pressure.

2. The sensor device of claim 1 , wherein the sealing structure comprises a metal material bonded to the sensor structure and the second structure to provide an airtight seal between the sensor structure and the second structure.

3. The sensor device of claim 2 , the second structure having a planar surface, wherein the metal material is bonded to the planar surface.

4. The sensor device of claim 1 , wherein the sealing structure defines a vacuum chamber on the first side of the first portion.

5. The sensor device of claim 1 , wherein the fixed reference pressure is at vacuum.

6. The sensor device of claim 1 , further comprising a conductive interconnect disposed between the sensor structure and the second structure, wherein the sealing structure and the conductive interconnect each comprise a metal material bonded to the sensor structure and the second structure.

7. The sensor device of claim 6 , wherein the conductive interconnect is electrically connected to the sensing arrangement.

8. The sensor device of claim 1 , further comprising a conductive interconnect disposed between the sensor structure and the integrated circuit die to provide an electrical connection between the control circuitry and the sensing arrangement.

9. The sensor device of claim 1 , wherein the first portion deflects in response to a difference between the ambient pressure and the fixed reference pressure.

10. The sensor device of claim 1 , wherein:

the sensor structure comprises a second integrated circuit die;

the first portion comprises a diaphragm region of the second integrated circuit die;

the sensing arrangement is formed on the first side of the diaphragm region; and

the sealing structure defines a vacuum chamber on the first side of the first portion.

11. A pressure sensor device comprising:

a pressure sensor structure including a diaphragm region having a sensing arrangement formed on a first side of the pressure sensor structure, wherein a second side of the diaphragm region is exposed to an ambient pressure;

a metal material circumscribing the diaphragm region, the metal material being bonded to the first side of the pressure sensor structure; and

a substrate having a planar surface, wherein the metal material is bonded to the planar surface of the substrate to establish a chamber on the first side of the diaphragm region having a fixed reference pressure, wherein the substrate comprises a semiconductor substrate having an application-specific integrated circuit formed thereon, the application-specific integrated circuit being coupled to the sensing arrangement to determine a pressure metric indicative of the ambient pressure based on an electrical signal from the sensing arrangement.

12. The pressure sensor device of claim 11 , wherein:

the sensing arrangement comprises a plurality of piezoresistive elements formed on the diaphragm region, resistances of the piezoresistive elements being influenced by deflection of the diaphragm region; and

the electrical signal is influenced by the resistances of the plurality of piezoresistive elements.

13. A pressure sensor device comprising:

a pressure sensor structure including a diaphragm region having a sensing arrangement formed on a first side of the pressure sensor structure, wherein a second side of the diaphragm region is exposed to an ambient pressure;

a metal material circumscribing the diaphragm region, the metal material being bonded to the first side of the pressure sensor structure;

a substrate having a planar surface, wherein the metal material is bonded to the planar surface of the substrate to establish a chamber on the first side of the diaphragm region having a fixed reference pressure; and

a protective material formed on the second side of the diaphragm region.

14. The sensor device of claim 13 , further comprising a molding compound surrounding the pressure sensor structure and the substrate.

15. A pressure sensor device comprising:

a pressure sensor structure including a diaphragm region having a sensing arrangement formed on a first side of the pressure sensor structure;

a metal material circumscribing the diaphragm region, the metal material being bonded to the first side of the pressure sensor structure;

a substrate having a planar surface, wherein the metal material is bonded to the planar surface of the substrate to establish a chamber having a fixed reference pressure; and

a molding compound disposed between the pressure sensor structure and the substrate, the molding compound surrounding the metal material.

16. The pressure sensor device of claim 15 , wherein:

the chamber is disposed on the first side of the diaphragm region; and

a second side of the diaphragm region is exposed to an ambient pressure.

17. The pressure sensor device of claim 15 , wherein the fixed reference pressure is at vacuum.

18. The sensor device of claim 15 , wherein the molding compound encapsulates the pressure sensor structure and the substrate.

19. A sensor device comprising:

a sensor structure including a cavity and a diaphragm region having a sensing arrangement formed thereon;

a substrate;

a sealing structure bonded to a first side of the sensor structure and the substrate, the sealing structure circumscribing the diaphragm region on the first side of the sensor structure; and

a capping member bonded to the substrate, the capping member covering the sensor structure to establish a fixed reference pressure on a second side of the sensor structure, wherein the substrate includes a hole formed therein, the diaphragm region being aligned with the hole to expose the first side of the diaphragm region opposite the cavity to an ambient pressure.

20. The sensor device of claim 19 , further comprising an integrated circuit die having formed thereon control circuitry to determine a pressure metric indicative of the ambient pressure based on an electrical signal from the sensing arrangement, the integrated circuit die being bonded to the substrate and the substrate providing an electrical connection between the sensing arrangement and the control circuitry.

Assignments (26)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0285 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0387 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0334 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →