IP Library Granted Patent US 8,476,087
Granted Patent B2
US 8,476,087 · App. 13/092,001 · Granted Jul 2, 2013

Methods for fabricating sensor device package using a sealing structure

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Quick Facts
Patent No.
US 8,476,087
App. No.
13/092,001
Granted
Jul 2, 2013
Kind
B2
Abstract

Fabrication methods are provided for a sensor device packages. An exemplary fabrication method involves bonding a sensor structure and another structure using a sealing structure. The sealing structure surrounds a diaphragm region of the sensor structure and provides an airtight seal between the sensor structure and the other structure to establish a fixed reference pressure on one side of the diaphragm region.

Claims (30)

1. A method of fabricating a sensor device including a sensor structure having a diaphragm region, the method comprising:

bonding the sensor structure and a first structure using a sealing structure, wherein the sealing structure surrounds the diaphragm region and provides an airtight seal between the sensor structure and the first structure to establish a fixed reference pressure on a first side of the diaphragm region; and

forming a molding compound surrounding the sensor structure and the first structure, a second side of the diaphragm region being exposed to an ambient pressure, wherein the molding compound is disposed between the sensor structure and the first structure and surrounds the sealing structure.

2. The method of claim 1 , the sealing structure comprising a metal material formed on one of the sensor structure or the first structure, wherein bonding the sensor structure and the first structure comprises bonding the metal material to an other of the sensor structure or the first structure.

3. The method of claim 2 , further comprising forming a conductive interconnect comprising the metal material on the one of the sensor structure or the first structure concurrently to forming the sealing structure, wherein bonding the metal material to the other of the sensor structure or the first structure comprises concurrently bonding the conductive interconnect to the other of the sensor structure or the first structure to provide an electrical connection between the sensor structure and the first structure.

4. The method of claim 2 , further comprising forming the metal material on a bonding region on the one of the sensor structure or the first structure prior to bonding the sensor structure and the first structure.

5. The method of claim 4 , wherein forming the metal material comprises plating the metal material on the bonding region.

6. The method of claim 4 , wherein bonding the sensor structure and the first structure comprises bonding the metal material to a second bonding region on the other of the sensor structure or the first structure, the second bonding region corresponding to the bonding region on the one of the sensor structure or the first structure.

7. The method of claim 1 , further comprising providing an electrical connection between a sensing arrangement formed on the diaphragm region and control circuitry formed on the first structure concurrently to bonding the sensor structure and the first structure, the control circuitry to determine a pressure metric indicative of ambient pressure on the second side of the diaphragm region based on an electrical signal from the sensing arrangement.

8. The method of claim 1 , further comprising forming a metal material on one of the sensor structure or the first structure, the sealing structure comprising the metal material, wherein bonding the sensor structure and the first structure comprises bonding the metal material to an other of the sensor structure or the first structure.

9. A method for fabricating a sensor device, the method comprising:

forming a metal material on one of a sensor structure or a first structure;

bonding the metal material to an other of the sensor structure or the first structure, wherein the metal material provides an airtight seal between the sensor structure and the first structure to establish a fixed pressure on a topside of a diaphragm region of the sensor structure, wherein a backside of the sensor structure includes a cavity;

affixing the backside of the sensor structure to a frame structure having an opening aligned with the diaphragm region after bonding the metal material to the first structure, the opening exposing the cavity to an ambient pressure; and

forming a molding compound overlying the sensor structure and the first structure after affixing the backside of the sensor structure to the frame structure.

10. The method of claim 9 , further comprising forming a conductive interconnect of the metal material on the one of the sensor structure or the first structure, the conductive interconnect providing an electrical connection to a sensing arrangement on the diaphragm region after bonding the metal material to the other of the sensor structure or the first structure.

11. The method of claim 1 , further comprising mounting the second side of the sensor structure to a second structure, wherein the second structure includes a hole aligned with the diaphragm region to expose the second side of the diaphragm region to the ambient pressure.

12. The method of claim 11 , wherein forming the molding compound comprises forming the molding compound overlying the sensor structure and the first structure to encapsulate the sensor structure and the first structure.

13. The method of claim 11 , further comprising providing electrical connections between the sensor structure and the second structure.

14. The method of claim 13 , further comprising performing a saw-to-reveal process after bonding the sensor structure and the first structure to expose peripheral portions of the sensor structure, wherein providing the electrical connections comprises forming conductive wire bonds between the peripheral portions of the sensor structure and the second structure.

15. A method of fabricating a sensor device including a sensor structure having a diaphragm region, the method comprising:

bonding the sensor structure and a first structure using a sealing structure, wherein the sealing structure surrounds the diaphragm region and provides an airtight seal between the sensor structure and the first structure to establish a fixed reference pressure on a first side of the diaphragm region;

forming a molding compound surrounding the sensor structure and the first structure, wherein a second side of the diaphragm region is exposed to an ambient pressure; and

forming a layer of protective material on the second side of the sensor structure after forming the molding compound, the second side of the sensor structure including a cavity.

16. The method of claim 15 , wherein forming the layer of protective material comprises depositing the protective material to a thickness less than 10 microns.

17. A method of fabricating a sensor device including a sensor structure having a diaphragm region and a cavity, the method comprising:

bonding a first side of the sensor structure and a first structure having an opening aligned with the diaphragm region to expose the first side of the diaphragm region opposite the cavity to an ambient pressure using a sealing structure that surrounds the diaphragm region and provides an airtight seal between the sensor structure and the first structure on the first side of the diaphragm region; and

bonding a capping member covering a second side of the sensor structure to the first structure after bonding the first side of the sensor structure and the first structure to establish a fixed reference pressure on the second side of the diaphragm region opposite the first side, the second side of the sensor structure including the cavity.

18. The method of claim 17 , further comprising bonding a second structure to the first structure, wherein the first structure provides an electrical connection between the sensor structure and the second structure.

19. The method of claim 18 , wherein bonding the second structure comprises bonding the second structure to the first structure concurrently to bonding the sensor structure and the first structure.

Assignments (26)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0285 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0387 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0334 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →