IP Library Granted Patent US 8,080,448
Granted Patent B1
US 8,080,448 · App. 13/092,170 · Granted Dec 20, 2011

Semiconductor device with nested rows of contacts

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,080,448
App. No.
13/092,170
Granted
Dec 20, 2011
Kind
B1
Abstract

A method of making semiconductor devices includes producing an array of first lead frames having rows of first electrical contact elements on respective sides. Sub-assemblies are produced by applying a first molding compound peripherally to provide support between the first electrical contact elements of each of the first lead frames, and singulating the sub-assemblies. An array of assemblies is produced, each of which includes a second lead frame having rows of second electrical contact elements on respective sides, a respective one of the sub-assemblies disposed in the second lead frame with the rows of first electrical contact elements nested adjacent to and inside the rows of second electrical contact elements, and a semiconductor die mounted on the sub-assembly. The assemblies are encapsulated using a second molding compound with the rows of first and second electrical contact elements exposed on adjacent sides of an active face of the respective assembly.

Claims (29)

1. A method of making semiconductor devices, comprising:

providing an array of first lead frames, each of which comprises a plurality of rows of first electrical contact elements on respective sides thereof;

applying a first molding compound to said array of first lead frames to provide support between said first electrical contact elements of each of said first lead frames, and

singulating said first lead frames to produce a plurality of sub-assemblies;

providing a plurality of second lead frames each of which comprises a plurality of rows of second electrical contact elements on respective sides thereof,

placing a respective one of said sub-assemblies inside one of said second lead frames, wherein said rows of first electrical contact elements are nested adjacent to and inside said rows of second electrical contact elements, and

attaching a semiconductor die on said respective ones of said sub-assemblies;

connecting each of said semiconductor dies electrically to said first and second electrical contact elements of the respective first and second lead frames, thereby forming a plurality of assemblies;

encapsulating said assemblies using a second molding compound, wherein said rows of first and second electrical contact elements are exposed on adjacent sides of an active face of the respective semiconductor device; and

singulating said assemblies.

2. The method of making semiconductor devices of claim 1 , wherein each of said first lead frames comprises a respective die pad disposed between said rows of first electrical contact elements, wherein said semiconductor dies are mounted on said die pads.

3. The method of making semiconductor devices of claim 2 , wherein encapsulating said assemblies leaves said die pads exposed in said active faces of the respective semiconductor devices.

4. The method of making semiconductor devices of claim 2 , wherein producing said sub-assemblies includes applying said first molding compound to provide support for said die pads as well as for said first electrical contact elements of said first lead frames.

5. The method of making semiconductor devices of claim 1 , wherein said semiconductor dies are mounted on said sub-assemblies respectively before said sub-assemblies are disposed in said assemblies.

6. The method of making semiconductor devices of claim 1 , wherein producing said sub-assemblies includes mounting said array of first lead frames on a first adhesive tape, applying said first molding compound to said first lead frames on said adhesive tape, and removing said first adhesive tape before singulating said first lead frames.

7. The method of making semiconductor devices of claim 1 , wherein each of said second lead frames presents an aperture between said rows of second electrical contact elements, and forming said array of assemblies includes mounting an array of said second lead frames on a second adhesive tape, and mounting said sub-assemblies on said second adhesive tape in said apertures of respective ones of said second lead frames.

8. The method of making semiconductor devices of claim 7 , wherein encapsulating said assemblies includes applying said second molding compound to said sub-assemblies and said second lead frames on said second adhesive tape, wherein said second adhesive tape is removed before singulating said assemblies.

9. The method of making semiconductor devices of claim 1 , wherein each of said first lead frames comprises two orthogonal pairs of rows of first electrical contact elements on respective sides of the first lead frame and each of said second lead frames comprises two orthogonal pairs of rows of second electrical contact elements on respective sides of the second lead frame, said semiconductor devices forming quad packages.

10. A semiconductor device, comprising:

a first lead frame including on respective sides thereof a plurality of rows of first electrical contact elements;

a first molding compound that provides support between said first electrical contact elements, wherein said first lead frame and said first molding compound form a sub-assembly;

a second lead frame including on respective sides thereof a plurality of rows of second electrical contact elements, wherein said sub-assembly is disposed between said rows of second electrical contact elements with said rows of first electrical contact elements nested adjacent to and inside said rows of second electrical contact elements;

a semiconductor die mounted on said sub-assembly;

electrical connections between said semiconductor die and said first and second electrical contact elements; and

a second molding compound disposed on said rows of first and second electrical contact elements, wherein said first and second electrical contact elements present exposed electrical contact surfaces on adjacent sides of an active face of the semiconductor die.

11. The semiconductor device of claim 10 , wherein said first lead frame includes a die pad disposed between said rows of first electrical contact elements, wherein said semiconductor die is mounted on said die pad.

12. The semiconductor device of claim 11 , wherein said second molding compound leaves said die pad exposed in said active face of the semiconductor device.

13. The semiconductor device of claim 11 , wherein said first molding compound of said sub-assembly provides support for said die pad as well as for said first electrical contact elements.

14. The semiconductor device of claim 10 , wherein the first lead frame includes two orthogonal pairs of rows of said first electrical contact elements on respective sides of the semiconductor die and said second lead frame includes two orthogonal pairs of rows of second electrical contact elements on respective sides of the semiconductor die, wherein said semiconductor device is a quad package.

Assignments (22)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0285 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0387 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0334 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 027622/0477 →
SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 027622/0075 →
SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 027621/0928 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 22, 2011
From: WU, PING; HE, QINGCHUN; LIU, PENG
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 026167/0308 →