Semiconductor device and method of manufacturing the same
View Patent ↗In a semiconductor device in which a glass substrate is attached to a surface of a semiconductor die with an adhesive layer being interposed therebetween, it is an object to fill a recess portion of an insulation film formed on a photodiode with the adhesive layer without bubbles therein. In a semiconductor die in which an optical semiconductor integrated circuit including a photodiode having a recess portion of an interlayer insulation film in the upper portion, an NPN bipolar transistor, and so on are formed, generally, a light shield film covers a portion except the recess portion region on the photodiode and except a dicing region. In the invention, an opening slit is further formed in the light shield film, extending from the recess portion to the outside of the recess portion, so as to attain the object.
1. A semiconductor device comprising:
a semiconductor die;
a semiconductor integrated circuit formed in a front surface portion of the semiconductor die and comprising a light receiving element;
an insulation film disposed on the semiconductor integrated circuit and having a recess portion on the light receiving element;
a light shield film disposed on the insulation film and having an opening on the recess portion and a slit extending, in a plan view of the light shield film, from the recess portion toward outside of the recess portion, the entire light shield film being made in one plane, and the slit and the opening having different shapes, the slit in the light shield film being an opening or a dent made by removing a portion of the light shield film;
a pad electrode disposed on the semiconductor die and connected to the semiconductor integrated circuit;
a supporting substrate attached to the front surface portion of the semiconductor die;
an adhesive layer disposed between the semiconductor die and the supporting substrate so as to attach the supporting substrate to the front surface portion of the semiconductor die; and
a back surface wiring electrode formed on a back surface of the semiconductor die and connected to the pad electrode.
2. The semiconductor device of claim 1 , wherein the slit cuts through the light shield film.
3. The semiconductor device of claim 1 , wherein the light shield film comprises a metal film.
4. The semiconductor device of claim 1 , wherein the light receiving element comprises a Blu-ray compatible photodiode.
5. The semiconductor device of claim 1 , wherein the supporting substrate comprises a glass substrate.
6. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor die comprising a semiconductor integrated circuit comprising a light receiving element formed on a front surface of the semiconductor die; forming an insulation film on the semiconductor integrated circuit; forming a recess portion on the light receiving element by etching the insulation film; forming a light shield film on the insulation film having the recess portion; patterning the light shield film so as to form an opening on the recess portion, to remove the light shield film from a dicing region and to form an opening slit extending from the recess portion toward outside of the recess portion; forming on the semiconductor die a pad electrode connected to the semiconductor integrated circuit near the dicing region; attaching a supporting substrate to the front surface of the semiconductor die using an adhesive; and forming a back surface wiring electrode connected to the pad electrode on a back surface of the semiconductor die, wherein the entire light shield film being made in one plane, and the slit and the opening having different shapes.
7. The method of claim 6 , further comprising etching the insulation film exposed through the opening slit of the light shield film so that the opening slit extends into the insulation film.
8. The method of claim 6 , wherein the light shield film comprises a metal film.
9. The method of claim 6 , wherein the light receiving element comprises a Blu-ray compatible photodiode.
10. The method of claim 6 , wherein the supporting substrate comprises a glass substrate.