IP Library Granted Patent US 8,565,025
Granted Patent B2
US 8,565,025 · App. 13/093,154 · Granted Oct 22, 2013

Dynamic programming for flash memory

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Quick Facts
Patent No.
US 8,565,025
App. No.
13/093,154
Granted
Oct 22, 2013
Kind
B2
Abstract

A method is for operating a memory having a group of non-volatile memory cells. A first programming pulse is applied to a subset of the group of non-volatile memory cells. The subset needs additional programming. A portion of the subset still needing additional programming is identified. A ratio of the number of memory cells in the subset and the number of memory cells in the portion is determined. A size of a second programming pulse based on the ratio is selected. The second programming pulse is applied to the portion.

Claims (27)

1. A method of operating a memory having a group of non-volatile memory cells, comprising:

applying a first programming pulse to a subset of the group of non-volatile memory cells, wherein the subset needs additional programming;

identifying a portion of the subset still needing additional programming;

determining a ratio of the number of memory cells in the subset and the number of memory cells in the portion;

selecting a size of a second programming pulse based on the ratio; and

applying the second programming pulse to the portion.

2. The method of claim 1 , wherein a difference between the portion and the subset is a number of non-volatile memory cells that became sufficiently programmed during the applying of the first programming pulse.

3. The method of claim 2 , wherein the non-volatile memory cells that became sufficiently programmed during the applying of the first programming pulse became sufficiently soft programmed.

4. The method of claim 2 , wherein the non-volatile memory cells that became sufficiently programmed during the applying of the first programming pulse became sufficiently programmed to be distinguishable from non-volatile memory cells that were in an erased condition.

5. The method of claim 2 , wherein the selecting the size comprises using the ratio to find the size of the second programming pulse in a look-up table.

6. The method of claim 5 , wherein the size of the second programming pulse is greater than that of the first programming pulse.

7. The method of claim 6 , wherein the size of the second programming pulse is greater by having a greater voltage.

8. The method of claim 6 , wherein the size of the second programming pulse is greater by having a greater duration.

9. The method of claim 1 , further comprising:

identifying a subportion of the portion still needing additional programming;

determining a ratio of the number of non-volatile memory cells in the subportion and the number of memory cells in the portion;

selecting a size of a third programming pulse based on the ratio of the number of memory cells in the portion and the number of non-volatile memory cells in the subportion; and

applying the third programming pulse to the subportion.

10. The method of claim 9 , wherein the size of the third programming pulse is greater than that of the second programming pulse.

11. The method of claim 9 , wherein the ratio of the number of memory cells in the subportion and the number of memory cells in the portion is the number of memory cells in the subportion divided by the number of non-volatile memory cells in the portion.

12. The method of claim 9 , wherein the ratio of the number of memory cells in the subportion and the number of memory cells in the portion is the number of non-volatile memory cells in the portion divided by the number of non-volatile memory cells in the subportion.

13. The method of claim 9 , further comprising determining if the applying the third programming pulse to the subportion resulted in all of the non-volatile memories in the subportion being sufficiently programmed.

14. The method of claim 9 , further comprising:

identifying a subset of the subportion still needing additional programming;

determining a ratio of the number of non-volatile memory cells in the subset and the number of memory cells in the subportion;

selecting a size of a fourth programming pulse based on the ratio of the number of memory cells in the subset and the number of memory cells in the subportion; and

applying the fourth programming pulse to the subset.

Assignments (16)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
MERGER Recorded Jan 3, 2017
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 041144/0363 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0334 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0387 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0285 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →