IP Library Granted Patent US 8,268,115
Granted Patent B2
US 8,268,115 · App. 13/093,972 · Granted Sep 18, 2012

Differential pressure application apparatus for use in polishing layers of semiconductor device structures and methods

Assignee: Round Rock Research, LLC
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Quick Facts
Patent No.
US 8,268,115
App. No.
13/093,972
Granted
Sep 18, 2012
Kind
B2
Abstract

An apparatus for applying different amounts of pressure to different locations of a semiconductor device structure or other substrate during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to individually apply pressure to a major surface of the semiconductor device structure during polishing thereof. Systems including the pressure application apparatus, as well as differential pressure application methods and polishing methods are also disclosed.

Claims (20)

1. An apparatus for polishing by selectively applying different amounts of pressure to a plurality of locations on a major surface of a semiconductor device structure, comprising:

a plurality of independently movable pressurization structures located and oriented to individually apply pressure to a major surface of a semiconductor device structure upon assembly of the semiconductor device structure with the apparatus; and

a plurality of actuators, each of the plurality of actuators associated with a corresponding pressurization structure of the plurality of independently movable pressurization structures so as to independently apply pressure to the major surface of the semiconductor device structure in such a way as to change an elevation of a corresponding region of an opposite surface of the semiconductor device structure wherein at least one actuator of the plurality of actuators comprises a vacuum source; and a polishing component including a single polishing pad.

2. The apparatus of claim 1 , wherein at least one pressurization structure of the plurality of independently movable pressurization structures comprises a ring.

3. The apparatus of claim 1 , wherein at least one actuator of the plurality of actuators comprises a magnetic controller.

4. The apparatus of claim 3 , wherein at least one pressurization structure of the plurality of independently movable pressurization structures comprises a magnetized material.

5. The apparatus of claim 3 , wherein at least one pressurization structure of the plurality of independently movable pressurization structures comprises a material that is attracted to a magnetic field.

6. The apparatus of claim 3 , wherein at least one actuator of the plurality of actuators is oriented so as to repel a corresponding pressurization structure.

7. The apparatus of claim 3 , wherein at least one actuator of the plurality of actuators is oriented so as to attract a corresponding pressurization structure.

8. The apparatus of claim 3 , wherein at least one actuator of the plurality of actuators comprises an electromagnet.

9. The apparatus of claim 3 , wherein at least one actuator of the plurality of actuators is movable toward and away from a corresponding pressurization structure.

10. The apparatus of claim 1 , further comprising a spring associated with at least one pressurization structure of the plurality of independently movable pressurization structures, the spring biasing the at least one pressurization structure against the major surface of the semiconductor device structure, at least one actuator of the plurality of actuators being configured to pull that at least one pressurization structure away from the major surface of the semiconductor device structure.

11. The apparatus of claim 1 , wherein at least one actuator of the plurality of actuators comprises a positive pressure source.

12. The apparatus of claim 11 , further comprising a spring associated with at least one pressurization structure of the plurality of independently movable pressurization structures.

13. The apparatus of claim 11 , wherein the positive pressure source is configured to bias a corresponding pressurization structure against the major surface of the semiconductor device structure.

14. The apparatus of claim 1 , wherein at least one actuator of the plurality of actuators is configured to bias the corresponding pressurization structure against the major surface of the semiconductor device structure with variable amounts of force.

15. The apparatus of claim 14 , wherein at least one actuator of the plurality of actuators is located to force the corresponding pressurization structure against the major surface of the semiconductor device structure.

16. The apparatus of claim 15 , wherein at least one actuator of the plurality of actuators is located to pull the corresponding pressurization structure against the major surface of the semiconductor device structure.

17. The apparatus of claim 1 , wherein a spring is associated with at least one pressurization structure of the plurality of pressurization structures.

18. The apparatus of claim 11 , wherein at least one pressurization structure of the plurality of pressurization structures is configured to apply a positive pressure to the major surface of the semiconductor device structure.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 5, 2012
From: MICRON TECHNOLOGY, INC.
To: ROUND ROCK RESEARCH, LLC
Reel/Frame 028931/0540 →
Continuity (3)
Division 11068666 · Feb 28, 2005
Continuation 09912982 · Jul 25, 2001
Related Publication 20110239876A1 · Oct 6, 2011