High pressure deuterium treatment for semiconductor/high-K insulator interface
View Patent ↗An integrated circuit structure comprises at least one pair of complementary transistors on a substrate. The pair of complementary transistors includes a first transistor and a second transistor. In addition, only one stress-producing layer is on the first transistor and the second transistor and applies tensile strain force on the first transistor and the second transistor. The first transistor has a first channel region, a gate insulator on the first channel region, and a deuterium region between the first channel region and the gate insulator. The second transistor has a germanium doped channel region, as well as the same gate insulator on the germanium doped channel region, and the same deuterium region between the germanium doped channel region and the gate insulator.
1. An integrated circuit structure comprising:
a substrate;
at least one pair of complementary transistors on said substrate, said pair of complementary transistors comprising a first transistor and a second transistor; and
only one stress-producing layer on said first transistor and said second transistor applying tensile strain force on said first transistor and said second transistor;
said first transistor comprising a first channel region, a gate insulator on said first channel region, and a deuterium region between said first channel region and said gate insulator, and
said second transistor comprising a germanium doped channel region, said gate insulator on said germanium doped channel region, and said deuterium region between said germanium doped channel region and said gate insulator.
2. The integrated circuit structure according to claim 1 , said pair of complementary transistors comprising complementary metal oxide (CMOS) transistors.
3. The integrated circuit structure according to claim 1 , said first transistor comprising a negative-type (N-type) transistor and said second transistor comprising a positive-type (P-type) transistor.
4. The integrated circuit structure according to claim 1 , said second transistor comprising a silicon germanium channel and said first transistor comprising a silicon channel free of germanium.
5. The integrated circuit structure according to claim 1 , said stress-producing layer comprising silicon-nitride.
6. The integrated circuit structure according to claim 1 , said stress-producing layer comprising the same material on said first transistor and said second transistor.
7. An integrated circuit structure comprising:
a substrate;
at least one pair of complementary transistors on said substrate, said pair of complementary transistors comprising a first transistor and a second transistor; and
only one stress-producing layer on said first transistor and said second transistor applying tensile strain force on said first transistor and said second transistor;
said first transistor comprising a first channel region, a gate insulator on said first channel region, and a deuterium region between said first channel region and said gate insulator,
said first channel region comprising one of gallium arsenide and indium gallium arsenide, and
said second transistor comprising a germanium doped channel region, said gate insulator on said germanium doped channel region, and said deuterium region between said germanium doped channel region and said gate insulator.
8. The integrated circuit structure according to claim 7 , said pair of complementary transistors comprising complementary metal oxide (CMOS) transistors.
9. The integrated circuit structure according to claim 7 , said first transistor comprising a negative-type (N-type) transistor and said second transistor comprising a positive-type (P-type) transistor.
10. The integrated circuit structure according to claim 7 , said second transistor comprising a silicon germanium channel.
11. The integrated circuit structure according to claim 7 , said stress-producing layer comprising silicon-nitride.
12. The integrated circuit structure according to claim 7 , said stress-producing layer comprising the same material on said first transistor and said second transistor.
13. A method of manufacturing an integrated circuit structure, said method comprising:
forming complementary channel regions separated by isolation regions within a substrate, said complementary channel regions comprising a first channel region of a first transistor, and said channel regions further comprising a germanium doped channel region of a second transistor;
simultaneously patterning gate insulators on said complementary channel regions;
simultaneously patterning gate conductors on said gate insulators;
heating said substrate in a pressurized vessel containing deuterium to simultaneously form deuterium regions between said complementary channel regions and said gate insulators; and
simultaneously forming only one stress-producing layer on said first transistor and said second transistor, said stress-producing layer applying tensile strain force on said first transistor and said second transistor.
14. The method according to claim 13 , said first transistor comprising a negative-type (N-type) transistor and said second transistor comprising a positive-type (P-type) transistor.
15. The method according to claim 13 , said second transistor comprising a silicon germanium channel and said first transistor comprising a silicon channel free of germanium.
16. The method according to claim 13 , said heating being performed at a pressure of at least 20 atmospheres.
17. The method according to claim 13 , said forming of said stress-producing layer comprising forming a layer of silicon-nitride.
18. The method according to claim 13 , said stress-producing layer comprising the same material on said first transistor and said second transistor.
19. A method of manufacturing an integrated circuit structure, said method comprising:
forming complementary channel regions separated by isolation regions within a substrate, said complementary channel regions comprising a first channel region of a first transistor, said first channel region comprising one of gallium arsenide and indium gallium arsenide, and said channel regions further comprising a germanium doped channel region of a second transistor;
simultaneously patterning gate insulators on said complementary channel regions;
simultaneously patterning gate conductors on said gate insulators;
heating said substrate in a pressurized vessel containing deuterium to simultaneously form deuterium regions between said complementary channel regions and said gate insulators; and
simultaneously forming only one stress-producing layer on said first transistor and said second transistor, said stress-producing layer applying tensile strain force on said first transistor and said second transistor.
20. The method according to claim 19 , said first transistor comprising a negative-type (N-type) transistor and said second transistor comprising a positive-type (P-type) transistor.
21. The method according to claim 19 , said second transistor comprising a silicon germanium channel and said first transistor comprising a silicon channel free of germanium.
22. The method according to claim 19 , said heating being performed at a pressure of at least 20 atmospheres.
23. The method according to claim 19 , said forming of said stress-producing layer comprising forming a layer of silicon-nitride.
24. The method according to claim 19 , said stress-producing layer comprising the same material on said first transistor and said second transistor.