Granted Patent B2

US 8,624,312 · App. 13/096,543 · Granted Jan 7, 2014

Abstract

Claims (19)

1. A capacitor structure, comprising: a conductive region; a first dielectric layer over the conductive region; a conductive material within the first dielectric layer, wherein the conductive material is on and contacts the conductive region and forms a first plate electrode of the capacitor structure; an insulating layer within the first dielectric layer and contacting opposing sides of the conductive material in a cross sectional view; a first conductive layer within the first dielectric layer and surrounding the insulating layer, wherein the first conductive layer forms a second plate electrode of the capacitor structure; a second conductive layer having a lateral extension of a first length from the first conductive layer at a top surface of the first dielectric layer; a second dielectric layer over the first dielectric layer; and a third conductive layer within the second dielectric layer and on and in contact with the conductive material.

2. The capacitor structure of claim 1 , further comprising a semiconductor layer, wherein the semiconductor layer comprises the conductive region and the first dielectric layer is over the semiconductor layer.

3. The capacitor structure of claim 2 , wherein the conductive region comprises a doped region.

4. The capacitor structure of claim 3 , wherein the doped region is a source/drain region of a transistor formed in and on the semiconductor layer.

5. The capacitor structure of claim 3 , wherein the doped region is a well tie region.

6. A capacitor structure comprising: a semiconductor layer comprising a conductive region, wherein the conductive region comprises a doped region wherein the doped region comprises a gate region of a transistor formed in and on the semiconductor layer; a first dielectric layer over the conductive region and the semiconductor layer; a conductive material within the first dielectric layer, wherein the conductive material is on the conductive region, contacts the conductive region, and forms a first plate electrode of the capacitor structure; an insulating layer within the first dielectric layer and surrounding the conductive material; a first conductive layer within the first dielectric layer and surrounding the insulating layer, wherein the first conductive layer forms a second plate electrode of the capacitor structure; a second conductive layer laterally extending from the first conductive layer at a top surface of the first dielectric layer; a second dielectric layer over the first dielectric layer; and a third conductive layer within the second dielectric layer and on the conductive material.

7. The capacitor structure of claim 1 , wherein the conductive region comprises a metal.

8. The capacitor structure of claim 1 , wherein the insulating layer comprises a material having a dielectric constant greater than approximately 7.5.

9. The capacitor structure of claim 1 , wherein the insulating layer comprises a plurality of insulating layers.

10. A capacitor structure comprising: a conductive region; a first dielectric layer over the conductive region; a conductive material within the first dielectric layer, wherein the conductive material is on the conductive region, contacts the conductive region, and forms a first plate electrode of the capacitor structure; an insulating layer within the first dielectric layer and surrounding the conductive material; a first conductive layer within the first dielectric layer and surrounding the insulating layer, wherein the first conductive layer forms a second plate electrode of the capacitor structure; a second conductive layer laterally extending from the first conductive layer at a top surface of the first dielectric layer; a second dielectric layer over the first dielectric layer; a third conductive layer within the second dielectric layer and on the conductive material; and a fourth conductive layer within the second dielectric layer and on the second conductive layer.

11. The capacitor structure of claim 1 , wherein each of the first conductive layer and the insulating layer does not fully extend through the first dielectric layer to the conductive region.

12. The capacitor structure of claim 1 , wherein the second conductive layer is within the top surface of the first dielectric layer.

13. The capacitor structure of claim 1 , wherein the second conductive layer has a thickness of less than approximately 50 nanometers.

14. A capacitor structure, comprising: a conductive region, wherein the conductive region is selected from a group consisting of a doped region of a semiconductor layer or a metal; a first dielectric layer over the conductive region; a conductive material within the first dielectric layer, wherein the conductive material is on the conductive region, contacts the conductive region, and forms a first plate electrode of the capacitor structure; an insulating layer within the first dielectric layer and surrounding the conductive material; a first conductive layer within the first dielectric layer and surrounding the insulating layer, wherein the first conductive layer forms a second plate electrode of the capacitor structure; a second conductive layer laterally extending from the first conductive layer at a top surface of the first dielectric layer; a second dielectric layer over the first dielectric layer; a third conductive layer within the second dielectric layer and on the conductive material; and a fourth conductive layer within the second dielectric layer and on the second conductive layer.

15. The capacitor structure of claim 14 , wherein the conductive region is a doped region of a semiconductor layer, wherein the doped region comprises one of a group consisting of a source/drain region of a transistor formed in and on the semiconductor layer, a well tie region, and a gate region of a transistor formed in and on the semiconductor layer.

16. The capacitor structure of claim 14 , wherein the insulating layer comprises a material having a dielectric constant greater than approximately 7.5.

17. The capacitor structure of claim 14 , wherein the insulating layer comprises a plurality of insulating layers.

18. The capacitor structure of claim 14 , wherein each of the first conductive layer and the insulating layer does not fully extend through the first dielectric layer to the conductive region.

19. A capacitor structure, comprising: a semiconductor layer; a doped region formed in a top surface of the semiconductor layer, wherein the doped region is selected from a group consisting of a source/drain region of a transistor formed in and on the semiconductor layer, a gate region of a transistor formed in and on the semiconductor layer, and a well tie region; a first dielectric layer over the semiconductor layer and the doped region; a conductive material within the first dielectric layer, wherein the conductive material is on the doped region, contacts the doped region, and forms a first plate electrode of the capacitor structure; an insulating layer within the first dielectric layer and surrounding the conductive material; a first conductive layer within the first dielectric layer and surrounding the insulating layer, wherein the first conductive layer forms a second plate electrode of the capacitor structure, wherein each of the first conductive layer and the insulating layer does not fully extend through the first dielectric layer to the doped region; a second conductive layer laterally extending from the first conductive layer at a top surface of the first dielectric layer; a second dielectric layer over the first dielectric layer; a third conductive layer within the second dielectric layer and on the conductive material; and a fourth conductive layer within the second dielectric layer and on the second conductive layer.

Assignments (21)