Static random-access memory with boosted voltages
View Patent ↗Dual port memory elements and memory array circuitry that utilizes elevated and non-elevated power supply voltages for performing reliable reading and writing operations are provided. The memory array circuitry may contain circuitry to switch a power supply line of a column of memory elements in the array to an appropriate power supply voltage during reading and writing operations. Each memory element may contain circuitry to select between power supply voltages during reading and writing operations. During reading operations, an elevated voltage may power cross-coupled inverters that store data in the memory elements while a non-elevated voltage may be used to turn on associated address transistors. During writing operations, the non-elevated voltage may power the cross-coupled inverters while the elevated voltage may be used to turn on the associated address transistors.
1. Circuitry comprising:
address register circuitry operable to generate a word line signal;
a word line;
a plurality of memory elements coupled to the word line, wherein the word line is operable to convey the word line signal to the plurality of memory elements and wherein each of the memory elements of the plurality of memory elements comprises a power supply terminal; and
switching circuitry operable to selectively couple the power supply terminals of the plurality of memory elements to a first power supply line at a first voltage during memory read operations and to selectively couple the power supply terminals of the plurality of memory elements to a second power supply line at a second voltage during memory write operations, wherein the first voltage is different than the second voltage, wherein the switching circuitry comprises a first transistor and a second transistor in each memory element of the plurality of memory elements, and wherein, in each memory element of the plurality of memory elements, the first transistor of that memory element is:
coupled between a pair of cross-coupled inverters in that memory element and the first power supply line; and
operable to be controlled by the word line signal.
2. The circuitry defined in claim 1 wherein, in each memory element of the plurality of memory elements, the second transistor of that memory element is:
coupled between a pair of cross-coupled inverters in that memory element and the second power supply line; and
operable to be controlled by the word line signal.
3. The circuitry defined in claim 2 wherein the plurality of memory elements comprise dual port memory elements.
4. The circuitry defined in claim 1 wherein the plurality of memory elements comprise dual port memory elements.
5. The circuitry defined in claim 1 wherein the first voltage is greater than the second voltage.
6. A method comprising:
generating a word line signal;
conveying the word line signal over a word line to a plurality of memory elements, wherein each of the memory elements of the plurality of memory elements comprises a power supply terminal;
during memory read operations, selectively coupling the power supply terminals of the plurality of memory elements to a first power supply line at a first voltage; and
during memory write operations, selectively coupling the power supply terminals of the plurality of memory elements to a second power supply line at a second voltage, wherein the first voltage is greater than the second voltage and wherein generating the word line signal comprises:
during the memory read operations, generating the word line signal at a voltage approximately equal to the second voltage; and
during the memory write operations, generating the word line signal at a voltage approximately equal to the first voltage.
7. The method defined in claim 6 wherein each memory element of the plurality of memory elements comprises a first transistor, a second transistor, and a pair of cross-coupled inverters and wherein selectively coupling the power supply terminals of the plurality of memory elements to the first power supply line at the first voltage during the memory read operations comprises:
in each memory element of the plurality of memory elements, coupling the first power supply line to the pair of cross-coupled inverters of that memory element through the first transistor of that memory element.
8. The method defined in claim 7 wherein selectively coupling the power supply terminals of the plurality of memory elements to the second power supply line at the second voltage during the memory write operations comprises:
in each memory element of the plurality of memory elements, coupling the second power supply line to the pair of cross-coupled inverters of that memory element through the second transistor of that memory element.
9. A method comprising:
generating a word line signal;
conveying the word line signal over a word line to a plurality of memory elements, wherein each of the memory elements of the plurality of memory elements comprises a power supply terminal;
during memory read operations, selectively coupling the power supply terminals of the plurality of memory elements to a first power supply line at a first voltage; and
during memory write operations, selectively coupling the power supply terminals of the plurality of memory elements to a second power supply line at a second voltage, wherein the first voltage is greater than the second voltage and wherein each memory element of the plurality of memory elements comprises a first transistor, a second transistor, and a pair of cross-coupled inverters and wherein selectively coupling the power supply terminals of the plurality of memory elements to the first power supply line at the first voltage during the memory read operations comprises:
in each memory element of the plurality of memory elements, coupling the first power supply line to the pair of cross-coupled inverters of that memory element through the first transistor of that memory element.
10. The method defined in claim 9 wherein selectively coupling the power supply terminals of the plurality of memory elements to the second power supply line at the second voltage during the memory write operations comprises:
in each memory element of the plurality of memory elements, coupling the second power supply line to the pair of cross-coupled inverters of that memory element through the second transistor of that memory element.