Semiconductor device and electronic device
View Patent ↗A semiconductor device comprises a switching element. The switching element comprises a first channel terminal, a second channel terminal and a switching terminal. One of the first and second channel terminals provides a reference terminal and the switching element is arranged such that an impedance of the switching element between the first channel terminal and second channel terminal is dependant upon a voltage across the switching terminal and the reference terminal. The semiconductor device further comprises a first resistance element operably coupled between the first channel terminal and the switching terminal and a second resistance element operably coupled between the switching terminal and the second channel terminal of the semiconductor device. When a negative current is encountered at the first channel terminal, the negative current causes both a voltage drop across the switching terminal and the first channel terminal and a voltage drop across the second channel terminal and the switching terminal.
1. A semiconductor device comprising:
a switching element, the switching element comprising a first channel terminal, a second channel terminal and a switching terminal the first channel terminal being operably coupled to an external contact of the semiconductor device;
wherein the first channel terminal is arranged to provide a reference terminal and the switching element is arranged such that an impedance of the switching element between the first channel terminal and second channel terminal is dependant upon a voltage across the switching terminal and the reference terminal, whereby when a voltage drop across the switching terminal and the reference terminal exceeds a switching voltage threshold for the switching element current is able to flow between the first and second channel terminals;
wherein the semiconductor device further comprises a first resistance element operably coupled between the first channel terminal and the switching terminal and a second resistance element operably coupled between the switching terminal and the second channel terminal of the semiconductor device such that when a negative current is encountered at the first channel terminal, the negative current causes both a voltage drop across the switching terminal and the first channel terminal and a voltage drop across the second channel terminal and the switching terminal.
2. The semiconductor device of claim 1 wherein the second channel terminal is operably coupled to a ground plane of the semiconductor device.
3. The semiconductor device of claim 2 wherein the second channel terminal is operably coupled to the ground plane via a first diode element, the first diode element being forward biased in a direction from the ground plane towards the second channel terminal.
4. The semiconductor device of claim 3 wherein the switching terminal is operably coupled to the ground plane, via the second resistance element and a second diode element, the second diode element being forward biased in a direction from the ground plane towards the switching terminal.
5. The semiconductor device of claim 3 wherein the switching element comprises a Metal Oxide Semiconductor Field Effect Transistor, MOSFET.
6. The semiconductor device of claim 3 wherein the first channel terminal is operably coupled to an external contact of the semiconductor device and the switching element is arranged to drive an external device.
7. An electronic device comprising the semiconductor device of claim 3 .
8. The semiconductor device of claim 2 wherein the switching terminal is operably coupled to the ground plane, via the second resistance element and a second diode element, the second diode element being forward biased in a direction from the ground plane towards the switching terminal.
9. The semiconductor device of claim 8 wherein the switching element comprises a Metal Oxide Semiconductor Field Effect Transistor, MOSFET.
10. The semiconductor device of claim 8 wherein the first channel terminal is operably coupled to an external contact of the semiconductor device and the switching element is arranged to drive an external device.
11. An electronic device comprising the semiconductor device of claim 8 .
12. The semiconductor device of claim 2 wherein the switching element comprises a Metal Oxide Semiconductor Field Effect Transistor, MOSFET.
13. The semiconductor device of claim 2 wherein the first channel terminal is operably coupled to an external contact of the semiconductor device and the switching element is arranged to drive an external device.
14. An electronic device comprising the semiconductor device of claim 2 .
15. The semiconductor device of claim 1 wherein the switching element comprises a Metal Oxide Semiconductor Field Effect Transistor, MOSFET.
16. The semiconductor device of claim 15 wherein the switching element comprises an N-channel MOSFET, and the first channel terminal comprises a source terminal of the N-channel MOSFET, the second channel terminal comprises a drain terminal of the N-channel MOSFET, and the switching terminal comprises a gate terminal of the N-channel MOSFET.
17. The semiconductor device of claim 16 wherein the first channel terminal is operably coupled to an external contact of the semiconductor device and the switching element is arranged to drive an external device.
18. The semiconductor device of claim 15 wherein the first channel terminal is operably coupled to an external contact of the semiconductor device and the switching element is arranged to drive an external device.
19. The semiconductor device of claim 1 wherein the first channel terminal is operably coupled to an external contact of the semiconductor device and the switching element is arranged to drive an external device.
20. An electronic device comprising the semiconductor device of claim 1 .