Compound semiconductor manufacturing device, compound semiconductor manufacturing method, and jig for manufacturing compound semiconductor
When compound semiconductor layers are formed on a compound semiconductor substrate ( 40 ) by sequentially layering group III nitride semiconductor crystalline layers by metal organic chemical vapor deposition method, the compound semiconductor substrate ( 40 ) is attached inside of a reaction container with the crystal growth surface thereof facing upward, a protection member ( 60 ) having plural grooves ( 63 ) formed in a radiating manner on the side facing the crystal growth surface is attached above the compound semiconductor substrate ( 40 ), and a material gas is supplied to the inside of the reaction container through a first through hole ( 61 ) provided in the center of the protection member ( 60 ). Thereby, in the manufacture of a compound semiconductor using metal organic chemical vapor deposition method, a decrease in yield caused by adhesion of peeled-off reaction byproducts to the substrate or to the epitaxially grown film on the substrate is suppressed.
1. A compound semiconductor manufacturing device for forming layers of a compound semiconductor on a first side of a substrate by use of metal organic chemical vapor deposition method comprising:
a reaction container;
a material supply port supplying a material gas of the compound semiconductor into the reaction container from outside;
a support placed in the reaction container, the support supporting the substrate so that the first side of the substrate faces upward; and
a facing member placed above the substrate supported by the support, the facing member including a facing surface having asperities formed thereon, the facing surface facing and directly opposing the first side of the substrate.
2. The compound semiconductor manufacturing device according to claim 1 , wherein a groove composed of a continuous concave is formed in the facing surface of the facing member.
3. The compound semiconductor manufacturing device according to claim 2 , wherein
the material supply port is composed of a through hole provided for the facing member, and
the groove extending at least in part from inside to outside with the through hole as a center is formed in the facing surface of the facing member.
4. The compound semiconductor manufacturing device according to claim 3 , wherein the groove is a plurality of grooves formed in a radiating manner with the through hole as a center.
5. A compound semiconductor manufacturing method for forming layers of a compound semiconductor on a first side of a substrate by use of metal organic chemical vapor deposition method comprising:
attaching the substrate in a reaction container so that the first side of the substrate faces upward;
placing a facing member above the substrate, the facing member including a facing surface having asperities formed thereon, the facing surface facing and directly opposing the first side of the substrate; and
supplying a material gas of the compound semiconductor into the reaction container.
6. The compound semiconductor manufacturing method according to claim 5 , wherein a continuous groove is formed in the facing surface.
7. The compound semiconductor manufacturing method according to claim 6 , wherein
the material gas is supplied into the reaction container through a through hole provided for the facing member, and
the groove extending at least in part from inside to outside with the through hole as a center is formed in the facing surface.
8. The compound semiconductor manufacturing method according to claim 7 , wherein the groove is a plurality of grooves formed in the facing surface in a radiating manner with the through hole as a center.
9. A jig for manufacturing a compound semiconductor used in a compound semiconductor manufacturing device for forming layers of a compound semiconductor on a first side of a substrate by use of metal organic chemical vapor deposition method comprising:
a facing surface having asperities, the facing surface facing and directly opposing the substrate above the substrate placed so that the first side thereof faces upward; and
a material supply port formed so as to penetrate the facing surface and a back side of the facing surface, the material supply port supplying a material gas of the compound semiconductor to the substrate from above the substrate.
10. The jig for manufacturing a compound semiconductor according to claim 9 , wherein a continuous groove is formed in the facing surface.
11. The jig for manufacturing a compound semiconductor according to claim 10 , wherein the groove extending at least in part from inside to outside with the material supply port as a center is formed in the facing surface.
12. The jig for manufacturing a compound semiconductor according to claim 11 , wherein the groove is a plurality of grooves formed in a radiating manner with the material supply port as a center.