Power MOS transistor device and switch apparatus comprising the same
View Patent ↗A transistor power switch device comprising an array of vertical transistor elements for carrying current between the first and second faces of a semiconductor body and a vertical avalanche diode electrically in parallel with the array of vertical transistors. The array of transistor elements includes at the first face an array of source regions of a first semiconductor type, at least one p region of a second semiconductor type opposite to the first type interposed between the source regions and the second face, at least one control electrode for switchably controlling flow of the current through the p region, and a conductive layer contacting the source regions and insulated from the control electrode. The vertical avalanche diode is configured to conduct breakdown current between the first and second faces in the off state of the device and having a first current carrying diode region of the second semiconductor type in contact with the first face and with the conductive layer and a second semiconductor region of the first semiconductor type electrically connected with the second face.
1. A transistor power switch device comprising:
a semiconductor body presenting opposite first and second faces;
an array of vertical transistor elements for carrying current between said first and second faces, wherein said array of vertical transistor elements comprises
at said first face an array of first current carrying transistor regions of a first semiconductor type,
at least one second current carrying transistor region of a second semiconductor type opposite to said first type interposed between said first semiconductor regions and said second face, and
at least one control electrode for switchably enabling flow of said current through said second transistor region in a forward direction in an on state of the transistor power switch device and switching off said flow of said current in an off state of the transistor power switch device; and
a conductive layer contacting said first current carrying transistor regions and insulated from said control electrode by at least one insulating layer; and,
at least one vertical avalanche diode in said semiconductor body electrically in parallel with said array of vertical transistor elements arranged so that said avalanche diode as well as said array of vertical transistor elements conduct breakdown avalanche current between said first and second faces in the off state of the transistor power switch device, wherein
said vertical avalanche diode is reverse biased in said on state of the transistor power switch device, and
said vertical avalanche diode comprises a first current carrying diode region of said second semiconductor type in contact with said first face and with said conductive layer and a second semiconductor region of said first semiconductor type electrically connected with said second face.
2. The transistor power switch device as claimed in claim 1 further comprising: an electrical connection lead bonded to said conductive layer at a position over said first current carrying diode region.
3. The transistor power switch device as claimed in claim 2 wherein said electrical connection lead comprises a wire extending away from said conductive layer configured to dissipate heat from said diode.
4. The transistor power switch device as claimed in claim 2 wherein said electrical connection lead comprises a contact bump on top of said conductive layer configured to dissipate heat from said diode.
5. The transistor power switch device as claimed in claim 2 further comprising:
in said semiconductor body, a plurality of said reverse biased avalanche diodes, wherein at least one of said electrical connection leads is bonded to said conductive layer over said first current carrying diode regions of each of said avalanche diodes.
6. The transistor power switch device as claimed in claim 4 , wherein at least one of said electrical connection leads is bonded to said conductive layer at a plurality of positions over said first current carrying diode regions of more than one of said avalanche diodes.
7. The transistor power switch device as claimed in claim 2 , wherein said reverse biased avalanche diode has a breakdown voltage less than said vertical transistor elements of said array.
8. The transistor power switch device as claimed in claim 2 , wherein
said array of transistor elements further-comprises
a lightly doped high voltage region of said second semiconductor type, and
an array of more heavily doped regions of said second semiconductor type within said lightly doped high voltage region; and
said reverse biased avalanche diode further comprises
a lightly doped body region of said second semiconductor type, and
a more heavily doped region of said second semiconductor type within said lightly doped body region, said lightly doped body region and said more heavily doped region of said reverse biased avalanche diode having been formed simultaneously with the corresponding regions of said transistor elements.
9. The transistor power switch device as claimed in claim 3 further comprising:
in said semiconductor body, a plurality of said reverse biased avalanche diodes, wherein at least one of said electrical connection leads is bonded to said conductive layer over said first current carrying diode regions of each of said avalanche diodes.
10. The transistor power switch device as claimed in claim 5 , wherein said reverse biased avalanche diode has a breakdown voltage less than said vertical transistor elements of said array.
11. The transistor power switch device as claimed in claim 1 , wherein said first current carrying transistor regions each contact said conductive layer over an area substantially less than an area over which said first current carrying diode region of said reverse biased avalanche diode contacts said conductive layer.
12. The transistor power switch device as claimed in claim 11 , wherein said reverse biased avalanche diode has an area at said first face more than an order of magnitude greater than each of said transistor elements.
13. The transistor power switch device as claimed in claim 11 , wherein
said array of transistor elements further-comprises
a lightly doped high voltage region of said second semiconductor type, and
an array of more heavily doped regions of said second semiconductor type within said lightly doped high voltage region; and
said reverse biased avalanche diode further comprises
a lightly doped body region of said second semiconductor type, and
a more heavily doped region of said second semiconductor type within said lightly doped body region, said lightly doped body region and said more heavily doped region of said reverse biased avalanche diode having been formed simultaneously with the corresponding regions of said transistor elements.
14. The transistor power switch device as claimed in claim 1 , wherein said reverse biased avalanche diode has a breakdown voltage less than said vertical transistor elements of said array.
15. The transistor power switch device as claimed in claim 1 , wherein
said array of vertical transistor elements further comprises
a lightly doped high voltage region of said second semiconductor type, and
an array of more heavily doped regions of said second semiconductor type within said lightly doped high voltage region; and
said reverse biased avalanche diode further comprises
a lightly doped body region of said second semiconductor type, and
a more heavily doped region of said second semiconductor type within said lightly doped body region, said lightly doped body region and said more heavily doped region of said reverse biased avalanche diode having been formed simultaneously with the corresponding regions of said vertical transistor elements.
16. The transistor power switch device as claimed in claim 1 wherein said vertical transistor elements comprise:
field-effect transistors whose first current carrying transistor regions comprise source regions, whose second current carrying transistor regions comprise at least one body region, whose control electrodes comprise at least one gate electrode, and which comprise at least one drain region electrically connected with said second face; and
said at least one insulating layer including a layer insulating said control electrode from said first and second current carrying transistor regions of said vertical transistor elements and layers insulating said control electrode from said at least one conductive layer.
17. The transistor power switch device as claimed in claim 16 wherein said source region of each of said vertical transistor elements contacting said conductive layer comprises:
a plurality of arms extending radially at said first face towards an arm of a source region of an adjacent vertical transistor element of said array;
said at least one body region extending around and under said arms of said source regions and merging between said vertical transistor elements to form a continuous body region; and
said at least one body region extending up within each of said source regions to contact said conductive layer at said first face at a contact position adjacent an end of each of said arms of said source regions.
18. The transistor power switch device as claimed in claim 17 wherein said at least one body region also extends up within each of said source regions to contact said conductive layer at said first face at a contact position central to each of said source regions of said vertical transistor elements.
19. The transistor power switch device as claimed in claim 17 , wherein said end of each of said arms of said source regions is enlarged at said first face around said contact position.
20. A power switch apparatus comprising the transistor power switch device as claimed in claim 1 and a voltage supply for applying operating voltages to said transistor power switch device.