Preventing breakage of long metal signal conductors on semiconductor substrates
View Patent ↗An apparatus includes a volume of insulator disposed over a top surface of a semiconductor substrate, a tube of soft dielectric, and a metal conductor. The insulator has a hardness of more than approximately three gigaPascals (gPa) and the soft dielectric has a hardness of less than three gPa. The tube of soft dielectric and the metal conductor are both embedded within the volume of insulator. The tube defines a central volume and the metal conductor extends in a direction through the central volume for a distance of at least one inch. The metal conductor is encircled by the soft dielectric when the apparatus is viewed in a cross-sectional plane perpendicular to the direction. The metal conductor may include a plurality of bend portions. The metal conductor does not break when the apparatus is temperature cycled over a range from zero to eighty five degrees Celsius.
1. A method comprising:
(a) providing a semiconductor substrate with a first insulating layer, wherein the semiconductor substrate has a surface plane;
(b) fabricating a metal conductor having a length of at least one inch, wherein the metal conductor extends in a direction parallel to the surface plane, wherein the metal conductor is encircled by a soft dielectric when the metal conductor is viewed in a cross-sectional plane perpendicular to the direction, and wherein the metal conductor includes a plurality of bend portions; and
(c) depositing a second insulating layer such that both the metal conductor and the soft dielectric are embedded within the first and the second insulating layers, wherein the first and second insulating layers have hardnesses of more than approximately three gigaPascals (gPa), and wherein the soft dielectric has a hardness of less than three gPa.
2. The method of claim 1 , wherein the metal conductor expands due to increased temperature such that the soft dielectric gets compressed at a plurality of locations that correspond to the plurality of bend portions.
3. The method of claim 1 , wherein there is at least one bend portion in each ten millimeter length of the metal conductor.
4. The method of claim 1 , wherein the metal conductor bends in a dimension parallel to the surface plane, and wherein each one of the plurality of bend portions has a bend angle of more than ninety degrees.
5. The method of claim 1 , wherein step (a) involves:
covering the first insulating layer with a layer of photo resist having a sine wave surface;
selecting an etchant such that the photo resist and the first insulating layer have approximately the same etch sensitivity; and
etching away the photo resist using the selected etchant such that the first insulating layer forms another sine wave surface.
6. The method of claim 5 , wherein the metal conductor bends in a dimension perpendicular to the surface plane.
7. The method of claim 6 , wherein the metal conductor has a sine wave shape.
8. The method of claim 1 , wherein the second insulating layer is silicon dioxide.
9. The method of claim 1 , wherein the soft dielectric has a rectangular outer peripheral edge when viewed in the cross-sectional plane.
10. The method of claim 1 , wherein the metal conductor has a cork-screw shape.
11. The method of claim 1 , wherein the soft dielectric is a low-k dielectric taken from the group consisting of: Aerogel, fluorinated silicon glass (FSG), aromatic hydrocarbon-based dielectric material (SilK), and fluorinated poly (arylene ether) (FLARE).
12. A method comprising:
conducting a signal through a metal conductor without breaking the metal conductor when the temperature of the metal conductor is temperature cycled over a range from zero to eighty-five degrees Celsius, wherein the metal conductor is at least one inch long in an axial direction and includes a plurality of bend portions, wherein the metal conductor is encircled by a soft dielectric when viewed in a cross-sectional plane perpendicular to the axial direction, wherein the soft dielectric is embedded within a volume of insulator, and wherein the volume of insulator is disposed over a top surface of a semiconductor substrate.
13. The method of claim 12 , wherein there is at least one bend portion in each ten millimeter length of the metal conductor, and wherein each one of the plurality of bend portions has a bend angle of more than ninety degrees.
14. The method of claim 12 , wherein the soft dielectric has a hardness of less than three gigaPascals, and the insulator has a hardness of more than three gigaPascals.
15. The method of claim 12 , wherein the insulator is silicon dioxide.
16. The method of claim 12 , further comprising:
compressing the soft dielectric at a plurality of locations that correspond to the plurality of bend portions when the temperature of the metal conductor is increased.
17. The method of claim 12 , wherein the metal conductor expands when the temperature of the metal conductor increases such that the soft dielectric is compressed at a plurality of locations that correspond to the plurality of bend portions.
18. The method of claim 12 , further comprising:
bending the metal conductor in a dimension parallel to a plane defined by the top surface of the semiconductor substrate when the temperature of the metal conductor is increased.
19. The method of claim 12 , further comprising:
bending the metal conductor in a dimension perpendicular to a plane defined by the top surface of the semiconductor substrate when the temperature of the metal conductor is increased.
20. The method of claim 12 , wherein the signal is conducted through the metal conductor to a pad of a Field Programmable Gate Array (FPGA) chip.