Inorganic-particle-dispersed sputtering target
View Patent ↗Provided is an inorganic-particle-dispersed sputtering target in which inorganic particles are dispersed in a Co base material, wherein the inorganic particles have an electric resistivity of 1×10 1 Ω·m or less and the volume ratio of the inorganic particles in the target is 50% or less. The sputtering target thus adjusted is advantageous in that, when sputtering is performed using a magnetron sputtering device comprising a DC power source, the inorganic particles are less charged, and arcing occurs less frequently. Accordingly, by using the sputtering target of the present invention, the occurrence of particles attributable to the arcing reduces, and a significant effect of improving the yield in forming a thin film is obtained.
1. An inorganic-particle-dispersed sputtering target for use in a magnetron sputtering device comprising a DC power source, the sputtering target in which inorganic particles are dispersed in a metal base material essentially consisting of Co, wherein the inorganic particles have an electric resistivity of 1×10 1 Ω·m or less and the volume ratio of the inorganic particles in the target is 50% or less, and said inorganic particles having a dimension and a shape in which a value obtained by dividing the surface area (unit: μm 2 ) of inorganic particles dispersed in the sputtering target by the volume (unit: μm 3 ) of the inorganic particles is 0.6 or more (unit 1/μm).
2. An inorganic-particle-dispersed sputtering target for use in a magnetron sputtering device comprising a DC power source, the sputtering target in which inorganic particles are dispersed in an alloy base material with a composition containing 5 at % or more and 50 at % or less of Pt and the remainder being Co, wherein the inorganic particles have an electric resistivity of 1×10 1 Ω·m or less and the volume ratio of the inorganic particles in the target is 50% or less, and said inorganic particles having a dimension and a shape in which a value obtained by dividing the surface area (unit: μm 2 ) of inorganic particles dispersed in the sputtering target by the volume (unit: μm 3 ) of the inorganic particles is 0.6 or more (unit 1/μm).
3. An inorganic-particle-dispersed sputtering target for use in a magnetron sputtering device comprising a DC power source, the sputtering target in which inorganic particles are dispersed in an alloy base material with a composition containing 5 at % or more and 40 at % or less of Cr and the remainder being Co, wherein the inorganic particles have an electric resistivity of 1×10 1 Ω·m or less and the volume ratio of the inorganic particles in the target is 50% or less, and said inorganic particles having a dimension and a shape in which a value obtained by dividing the surface area (unit: μm 2 ) of inorganic particles dispersed in the sputtering target by the volume (unit: μm 3 ) of the inorganic particles is 0.6 or more (unit 1/μm).
4. An inorganic-particle-dispersed sputtering target for use in a magnetron sputtering device comprising a DC power source, the sputtering target in which inorganic particles are dispersed in an alloy base material with a composition containing 5 at % or more and 40 at % or less of Cr, 5 at % or more and 30 at % or less of Pt, and the remainder being Co, wherein the inorganic particles have an electric resistivity of 1×10 1 Ω·m or less and the volume ratio of the inorganic particles in the target is 50% or less, and said inorganic particles having a dimension and a shape in which a value obtained by dividing the surface area (unit: μm 2 ) of inorganic particles dispersed in the sputtering target by the volume (unit: μm 3 ) of the inorganic particles is 0.6 or more (unit 1/μm).
5. The inorganic-particle-dispersed sputtering target according to claim 1 , wherein the metal base material in which the inorganic particles are dispersed contains, as an additive element, 0.5 at % or more and 10 at % or less of one or more elements selected from B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta and W.
6. The inorganic-particle-dispersed sputtering target according to claim 1 , wherein the inorganic particles are a material of one or more components selected from carbon, oxide, nitride and carbide.
7. An inorganic-particle-dispersed sputtering target for use in a magnetron sputtering device comprising a DC power source, the sputtering target comprising a metal-based matrix essentially consisting of Co and containing inorganic particles dispersed therein, wherein the inorganic particles have an electric resistivity of 1×10 Ω·m or less, wherein the inorganic particles as a whole have a volume ratio of 50% or less of the volume of the target, and wherein the inorganic particles appearing in a cross-section of the target have a dimension and a shape such that an average value for the outer perimeter (unit: μm) divided by the area (unit: μm 2 ) of each of the inorganic particles is 0.4 or more (unit 1/μm).
8. The inorganic-particle-dispersed sputtering target according to claim 7 , wherein the metal-based matrix contains 0.5 at % or more and 10 at % or less in total of one or more elements selected from the group consisting of B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta and W.
9. The inorganic-particle-dispersed sputtering target according to claim 7 , wherein the inorganic particles are of one or more materials selected from the group consisting of carbon, oxide, nitride and carbide.
10. An inorganic-particle-dispersed sputtering target for use in a magnetron sputtering device comprising a DC power source, the sputtering target in which inorganic particles are dispersed in an alloy base material with a composition containing 5 at % or more and 50 at % or less of Pt and the remainder being Co, wherein the inorganic particles have an electric resistivity of 1×10 1 Ω·m or less, the volume ratio of the inorganic particles in the target is 50% or less, and said inorganic particles have a dimension and a shape in which, in a structure based on a cross-section observation of the sputtering target, a value obtained by dividing an outer perimeter (unit: μm) of an individual inorganic particle by an area (unit: μm 2 ) of the individual inorganic particle is 0.4 or more (unit 1/μm) on average.
11. An inorganic-particle-dispersed sputtering target for use in a magnetron sputtering device comprising a DC power source, the sputtering target in which inorganic particles are dispersed in an alloy base material with a composition containing 5 at % or more and 40 at % or less of Cr and the remainder being Co, wherein the inorganic particles have an electric resistivity of 1×10 1 Ω·m or less, the volume ratio of the inorganic particles in the target is 50% or less, and said inorganic particles have a dimension and a shape in which, in a structure based on a cross-section observation of the sputtering target, a value obtained by dividing an outer perimeter (unit: μm) of an individual inorganic particle by an area (unit: μm 2 ) of the individual inorganic particle is 0.4 or more (unit 1/μm) on average.
12. An inorganic-particle-dispersed sputtering target for use in a magnetron sputtering device comprising a DC power source, the sputtering target in which inorganic particles are dispersed in an alloy base material with a composition containing 5 at % or more and 40 at % or less of Cr, 5 at % or more and 30 at % or less of Pt, and the remainder being Co, wherein the inorganic particles have an electric resistivity of 1×10 1 Ω·m or less, the volume ratio of the inorganic particles in the target is 50% or less, and said inorganic particles have a dimension and a shape in which, in a structure based on a cross-section observation of the sputtering target, a value obtained by dividing an outer perimeter (unit: μm) of an individual inorganic particle by an area (unit: μm 2 ) of the individual inorganic particle is 0.4 or more (unit 1/μm) on average.
13. The inorganic-particle-dispersed sputtering target according to claim 12 , wherein the alloy base material contains 0.5 at % or more and 10 at % or less in total of one or more elements selected from the group consisting of B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta and W.
14. The inorganic-particle-dispersed sputtering target according to claim 13 , wherein the inorganic particles are of one or more materials selected from the group consisting of carbon, oxide, nitride and carbide.
15. The inorganic-particle-dispersed sputtering target according to claim 4 , wherein the alloy base material contains, 0.5 at % or more and 10 at % or less in total of one or more elements selected from the group consisting of B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta and W.
16. The inorganic-particle-dispersed sputtering target according to claim 15 , wherein the inorganic particles are of one or more materials selected from the group consisting of carbon, oxide, nitride and carbide.
17. The inorganic-particle-dispersed sputtering target according to claim 12 , wherein said inorganic particles have a dimension and a shape in which a value obtained by dividing the surface area (unit: μm 2 ) of inorganic particles dispersed in the sputtering target by the volume (unit: μm 3 ) of the inorganic particles is 0.6 or more (unit 1 μm).
18. The inorganic-particle-dispersed sputtering target according to claim 11 , wherein said inorganic particles have a dimension and a shape in which a value obtained by dividing the surface area (unit: μm 2 ) of inorganic particles dispersed in the sputtering target by the volume (unit: μm 3 ) of the inorganic particles is 0.6 or more (unit 1/μm).
19. The inorganic-particle-dispersed sputtering target according to claim 10 , wherein said inorganic particles have a dimension and a shape in which a value obtained by dividing the surface area (unit: μm 2 ) of inorganic particles dispersed in the sputtering target by the volume (unit: μm 3 ) of the inorganic particles is 0.6 or more (unit 1/μm).
20. The inorganic-particle-dispersed sputtering target according to claim 7 , wherein said inorganic particles have a dimension and a shape in which a value obtained by dividing the surface area (unit: μm 2 ) of inorganic particles dispersed in the sputtering target by the volume (unit: μm 3 ) of the inorganic particles is 0.6 or more (unit 1/μm).