METHOD OF FABRICATING A RELEASE SUBSTRATE
The invention relates to a release substrate produced from semiconductor materials, and which includes a first substrate release layer having a surface in contact with a connecting layer, and a second substrate release layer having a surface in contact with the connecting layer opposite the first substrate release layer so that the connecting layer is located between the first substrate release layer and second substrate release layer; and a concentrated zone of solid nanoparticles located within the connecting layer to maintain the bonding energy of the reversible connection substantially constant even when the substrate is exposed to heat treatment while also facilitating breaking of the connecting layer by mechanical action.
1 . A structure comprising:
a first substrate release layer having a surface in contact with a connecting layer, and a second substrate release layer having a surface in contact with the connecting layer opposite the first substrate release layer so that the connecting layer is located between the first substrate release layer and second substrate release layer; and
a concentrated zone of solid nanoparticles located within the connecting layer to facilitate breaking of the connecting layer by mechanical action.
2 . The structure of claim 1 , wherein the first and second substrate release layers are made of semiconductor material, the connecting layer is made of an oxide or nitride of the semiconductor material of the substrate release layers, and the solid nanoparticles are made of a semiconductor material that is different from the material forming the connecting layer.
3 . The structure of claim 1 , wherein the connecting layer and concentrated zone of nanoparticles are stable and do not weaken when the structure is exposed to heat treatment, but the connecting layer can be broken at the concentrated zone of nanoparticles by mechanical action.
4 . The structure of claim 1 , wherein the connecting layer comprises SiO 2 and the nanoparticles comprise Si or Ge.
5 . The structure of claim 1 , wherein the connecting layer has a bonding energy that is substantially constant even when the release substrate is exposed to heat treatments as high as 900° C. to 1100° C.
6 . The structure of claim 1 , wherein the nanoparticles have diameters on the order of 1 nm to 10 nm.