IP Library Granted Patent US 8,293,588
Granted Patent B2
US 8,293,588 · App. 13/151,778 · Granted Oct 23, 2012

Method of providing an electronic device including dies, a dielectric layer, and an encapsulating layer

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Quick Facts
Patent No.
US 8,293,588
App. No.
13/151,778
Granted
Oct 23, 2012
Kind
B2
Abstract

A method of packaging an electronic device includes providing a patterned dielectric layer with an area sized to receive a first die, and another area sized to receive a second die, placing the first and second dies within the first and second areas, encapsulating the dies with an encapsulating material that has a different composition from the dielectric layer, forming a first signal line between the dies, forming a second signal line to the first die, and forming an additional signal line to the first die. The dielectric layer is disposed between the first signal line and the encapsulating material, the electronic device transmits a signal in an approximate range of 1 GHz to 100 GHz along the second signal line, and a signal that does not exceed approximately 900 MHz along the additional signal line.

Claims (36)

1. A method of packaging an electronic device, the method comprising:

providing a patterned dielectric layer, including a first area sized to receive a first die, and a second area sized to receive a second die;

placing the first die within the first area and the second die within the second area;

encapsulating the first die and the second die within an encapsulating material, wherein the encapsulating material has a different composition as compared to the dielectric layer;

forming a first signal line coupled to the first die and the second die, wherein the dielectric layer is disposed between the signal line and the encapsulating material;

forming a second signal line coupled to the first die, wherein the electronic device is operable to transmit a signal having a frequency within a range of from 1 GHz to 100 GHz along the second signal line; and

forming an additional signal line coupled to the first die, wherein the electronic device is operable to transmit a signal having a frequency that does not exceed 900 MHz along the additional signal line.

2. The method of claim 1 , wherein the electronic device is operable to transmit a signal having a frequency within a range of from 1 GHz to 100 GHz along the first signal line.

3. The method of claim 1 , further comprising forming a thru via that extends through the dielectric layer and the encapsulating material, wherein the first die is coupled to the thru via.

4. The method of claim 1 , further comprising forming a plurality of vias between the first die and the second die.

5. The method of claim 4 , further comprising connecting a first via of the plurality of vias and a second via of the plurality of vias to each other by a conductive layer, wherein the dielectric layer lies between the conductive layer and the encapsulating material.

6. The method of claim 4 , further comprising:

forming a patterned conductive layer, wherein the dielectric material is disposed between the conductive layer and the encapsulating material; and

wherein each of the plurality of vias is electrically connected with the conductive layer.

7. The method of claim 4 , wherein the plurality of vias are formed by laser drilling, chemical etching, or any combination thereof.

8. The method of claim 4 , further comprising filling the plurality of vias with a conductive material.

9. The method of claim 1 , wherein the second signal line is formed at approximately a same elevation as the first signal line.

10. The method of claim 1 , wherein the dielectric layer includes an organic material.

11. The method of claim 10 , wherein the dielectric layer comprises a composite of the organic material and a ceramic material.

12. The method of claim 10 , wherein a dielectric constant of the dielectric layer is within fifty percent of a dielectric constant of the encapsulating material.

13. The method of claim 12 , wherein the dielectric constant of the dielectric layer is within ten percent of the dielectric constant of the encapsulating material.

14. A method of packaging an electronic device, the method comprising:

providing a patterned dielectric layer, including a first open area, and a second open area;

placing a first die within the first open area and a second die within the second open area; and

encapsulating the first die and the second die within an encapsulating material, wherein the encapsulating material has a different composition as compared to the dielectric layer;

wherein a maximum attenuation constant of the electronic device is 0.15 dB/mm for electromagnetic signals having frequencies in a range of from 70 GHz to 90 GHz.

15. The method of claim 14 , wherein the dielectric layer is in a form of a dielectric plate.

16. The method of claim 14 , further comprising forming an electrically conductive carrier having a length substantially perpendicular to a width of the dielectric layer, the electrically conductive carrier contacting both the dielectric layer and the encapsulating material.

17. The method of claim 16 , wherein the electrically conductive carrier is adapted to electrically ground the electronic device and to shield the first die from electromagnetic interference.

18. The method of claim 17 , wherein the electrically conductive carrier is formed as a thru via.

19. The method of claim 18 , wherein the first die is coupled to the thru via.

20. A method of providing a signal line for an electronic device, the method comprising:

providing a patterned dielectric layer, including a first open area and a second open area;

placing a first die within the first open area and a second die within the second open area;

encapsulating a first non-active portion of the first die and a second non-active portion of the second die within an encapsulating material, wherein the encapsulating material has a different composition as compared to the dielectric layer;

forming the signal line such that the dielectric layer is disposed between the signal line and the encapsulating material, wherein the signal line is coupled to the first die and the second die, and the signal line is operable to transmit a signal having a frequency within a range of from 1 GHz to 100 GHz.

Assignments (30)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0285 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0334 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0387 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 027622/0477 →
SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 027622/0075 →
SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 027621/0928 →