IP Library Granted Patent US 8,338,951
Granted Patent B2
US 8,338,951 · App. 13/152,665 · Granted Dec 25, 2012

Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the same

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Quick Facts
Patent No.
US 8,338,951
App. No.
13/152,665
Granted
Dec 25, 2012
Kind
B2
Abstract

A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A metal line is formed to fill the metal line forming region of the insulation layer. And a diffusion barrier that includes an amorphous TaBN layer is formed between the metal line and the insulation layer. The amorphous TaBN layer prevents a copper component from diffusing into the semiconductor substrate, thereby improving upon the characteristics and the reliability of a device.

Claims (12)

1. A metal line of a semiconductor device, comprising:

an insulation layer formed on a semiconductor substrate and having a metal line forming region;

a metal line formed to fill the metal line forming region of the insulation layer; and

a diffusion barrier formed between the metal line and the insulation layer and comprises a stack of a Ta x B y layer and the amorphous TaBN layer,

wherein the Ta x B y layer is formed on a surface of the insulation layer and a surface of the metal line forming region, and the amorphous TaBN layer is formed on the Ta x B y layer.

2. The metal line according to claim 1 , wherein the metal line forming region has a structure including a trench or a trench and a via hole.

3. The metal line according to claim 1 , wherein the diffusion barrier further comprises a TaN layer,

wherein the TaN layer is formed between the surface of the insulation layer and the Ta x B y layer, and between the surface of the metal line forming region and the Ta x B y layer.

4. The metal line according to claim 3 , wherein, the Ta x B y layer has a hexagonal structure, wherein x has a range of 0.8˜1.2 and y has a range of 1.8˜2.2.

5. The metal line according to claim 1 , further comprising:

a seed layer interposed between the diffusion barrier and the metal line and made of an Ru layer.

6. The metal line according to claim 1 , wherein the metal line is made of a copper layer.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE IS HYNIX SEMICONDUCTOR INC. NOT HYNIX-SEMICONDUCTOR INC. THERE IS NO HYPHEN IN THE NAME. PREVIOUSLY RECORDED ON REEL 67328 FRAME 814. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF NAME. Recorded May 14, 2024
From: HYNIX SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067412/0482 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2024
From: SK HYNIX INC.
To: MIMIRIP LLC
Reel/Frame 067369/0832 →
CHANGE OF NAME Recorded May 6, 2024
From: HYNIX-SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067328/0814 →