Granted Patent B2

US 8,481,113 · App. 13/157,473 · Granted Jul 9, 2013

Inventors: Moungi G. Bawendi (Cambridge, MA); Klavs F. Jensen (Lexington, MA); Bashir O. Dabbousi (Dharan, SA); Javier Rodriguez-Viejo (Sant Cugat del Valles, ES); Frederic Victor Mikulec (Somerville, MA)

Assignee: Massachusetts Institute of Technology

Abstract

Claims (22)

1. A monodisperse population of nanocrystals comprising:

a plurality of nanocrystal particles, wherein each particle includes a core including a first semiconductor material and an overcoating including a second semiconductor material deposited on the core;

wherein the first semiconductor material and the second semiconductor material are different;

wherein the monodisperse population emits light in a spectral range of no greater than about 37 nm full width at half max (FWHM); and

wherein the monodisperse population exhibits photoluminescence having a quantum yield of greater than 30%.

2. The monodisperse population of claim 1 , wherein the monodisperse population emits light in a spectral range of no greater than about 30 nm full width at half max (FWHM).

3. The monodisperse population of claim 1 , wherein the cores of the plurality of nanocrystal particles have diameters having no greater than 10% rms deviation.

4. The monodisperse population of claim 1 , wherein the cores of the plurality of nanocrystal particles have diameters having no greater than 5% rms deviation.

5. The monodisperse population of claim 1 , wherein each particle of the monodisperse population further comprises an organic layer on the outer surface of the particle.

6. The monodisperse population of claim 5 , wherein the organic layer includes a moiety selected to provide a stable suspension or dispersion with a suspension or dispersion medium.

7. The monodisperse population of claim 1 , wherein the cores of the plurality of nanocrystal particles have a mean diameter in the range of about 20 Å to about 125 Å.

8. A monodisperse population of nanocrystals comprising:

a plurality of nanocrystal particles, wherein each particle includes a core including a first semiconductor material selected from CdS, CdSe, and CdTe, and an overcoating including a second semiconductor material selected from ZnS, CdS, and CdSe deposited on the core;

wherein the first semiconductor material and the second semiconductor material are different;

wherein the monodisperse population emits light in a spectral range of no greater than about 37 nm full width at half max (FWHM).

9. The monodisperse population of claim 8 , wherein the monodisperse population emits light in a spectral range of no greater than about 30 nm full width at half max (FWHM).

10. The monodisperse population of claim 8 , wherein the monodisperse population exhibits photoluminescence having a quantum yield of greater than 30%.

11. The monodisperse population of claim 8 , wherein the cores of the plurality of nanocrystal particles have diameters having no greater than 10% rms deviation.

12. The monodisperse population of claim 8 , wherein the cores of the plurality of nanocrystal particles have diameters having no greater than 5% rms deviation.

13. The monodisperse population of claim 8 , wherein each particle of the monodisperse population further comprises an organic layer on the outer surface of the particle.

14. The monodisperse population of claim 13 , wherein the organic layer includes a moiety selected to provide a stable suspension or dispersion with a suspension or dispersion medium.

15. The monodisperse population of claim 8 , wherein the cores of the plurality of nanocrystal particles have a mean diameter in the range of about 20 Å to about 125 Å.

Assignments (2)

Continuity (10)