Semiconductor package with interconnect layers
View Patent ↗A chip package comprising a glass substrate, wherein a first opening in the glass substrate passes vertically through the glass substrate, a semiconductor chip, a wiring structure comprising a first portion in the first opening and a second portion over the glass substrate, wherein the first portion is connected to the semiconductor chip, wherein the wiring structure comprises a passive device, wherein the wiring structure comprises copper, and a dielectric layer over the glass substrate and on the wiring structure, wherein a second opening in the dielectric layer is over a contact point of the wiring structure, and the contact point is at a bottom of the second opening.
1. A chip package comprising:
an etchable glass substrate, wherein a first opening in said etchable glass substrate passes through said etchable glass substrate;
a semiconductor chip coupled to the etchable glass substrate;
a conductive structure comprising a first portion disposed within said first opening and a second portion coupled to the etchable glass substrate, wherein said first portion is coupled to said semiconductor chip, wherein said conductive structure comprises a passive device; and
a dielectric layer over said etchable glass substrate and over said conductive structure, wherein a second opening in said dielectric layer exposes a contact point of said conductive structure.
2. The chip package of claim 1 , wherein said passive device comprises an inductor.
3. The chip package of claim 1 , wherein said passive device comprises a capacitor.
4. The chip package of claim 1 , wherein said passive device comprises a resistor.
5. The chip package of claim 1 , wherein said first opening is aligned with said semiconductor chip.
6. The chip package of claim 1 , wherein said semiconductor chip is at a bottom side of said etchable glass substrate.
7. The chip package of claim 1 further comprises a conductive interconnect over said etchable glass substrate, wherein said conductive interconnect is coupled to said semiconductor chip.
8. The chip package of claim 7 , wherein said conductive interconnect comprises a gold interconnect.
9. The chip package of claim 7 , wherein said conductive interconnect comprises a solder interconnect.
10. The chip package of claim 1 , wherein said etchable glass substrate has a width greater than that of said semiconductor chip.
11. The chip package of claim 1 , wherein said dielectric layer comprises a polymer layer.
12. The chip package of claim 1 , wherein said semiconductor chip is coupled with said etchable glass substrate.
13. The chip package of claim 1 , wherein said semiconductor chip joins said conductive structure.
14. The chip package of claim 1 , wherein said conductive structure comprises electroplated copper.