Semiconductor device and method of manufacturing the same
View Patent ↗In a semiconductor device including a protection diode for preventing electrostatic breakdown employing a low capacitance protection diode, an occupation area of a Zener diode as a voltage limiting element is not needed on a front surface of a semiconductor substrate. A P+ type embedded diffusion layer is formed in a P+ type semiconductor substrate. This is then covered by a non-doped first epitaxial layer. A high resistivity N type second epitaxial layer is then formed on the first epitaxial layer. The second epitaxial layer is divided by a P+ isolation layer into a first protection diode forming region and a second protection diode forming region. An N+ type embedded layer extending from the front surface of the first epitaxial layer of the first protection diode forming region to the first epitaxial layer and the second epitaxial layer, and so on are then formed. A Zener diode is formed by a P+ type upward diffusion layer extending from the P+ type embedded diffusion layer and the N+ type embedded layer.
1. A semiconductor device, comprising:
a first epitaxial layer of a first general conductivity type formed on a semiconductor layer of the first general conductivity type;
a second epitaxial layer of a second general conductivity type formed on the first epitaxial layer;
an isolation layer of the first general conductivity type formed in the second epitaxial layer and dividing the second epitaxial layer into a first protection diode forming region and a second protection diode forming region;
a first embedded layer of the second general conductivity type extending from the first epitaxial layer toward the second epitaxial layer in the first protection diode forming region;
a second embedded layer of the second general conductivity type extending from a bottom of the first embedded layer so as to connect to the second epitaxial layer in the first protection diode forming region;
a PN junction formed with the first embedded layer and the first epitaxial layer in the first protection diode forming region;
an upward diffusion layer of the first general conductivity type extending from the semiconductor layer so as to connect to the second epitaxial layer in the second protection diode forming region; and
a Zener diode formed with the PN junction, using the first embedded layer as a cathode layer and the first epitaxial layer as an anode layer.
2. The semiconductor device of claim 1 , wherein the first protection diode forming regions and the second protection diode forming regions are alternately disposed.
3. The semiconductor device of claim 1 , further comprising a first protection diode comprising a cathode layer of the second general conductivity type extending from the second embedded layer formed in the first protection diode forming region to a front surface of the second epitaxial layer and an anode layer of the first general conductivity type formed in the front surface of the second epitaxial layer adjacent to the cathode layer, and a second protection diode comprising a cathode layer of the second general conductivity type formed in the front surface of the second epitaxial layer in the second protection diode forming region and an anode layer of the first general conductivity type comprising the isolation layer and the upward diffusion layer.
4. The semiconductor device of claim 3 , wherein the cathode layer of the first protection diode is connected to a power supply line, the anode layer of the second protection diode is connected to a ground line, the anode layer of the first protection diode and the cathode layer of the second protection diode are connected to a same signal line, the cathode layer of the Zener diode is connected to the power supply line, and the anode layer of the Zener diode is connected to the ground line.
5. The semiconductor device of claim 1 , wherein the semiconductor layer is an embedded diffusion layer of the first general conductivity type in which impurities are diffused in a semiconductor substrate of the first general conductivity type from the front surface.