IP Library Granted Patent US 8,877,523
Granted Patent B2
US 8,877,523 · App. 13/166,552 · Granted Nov 4, 2014

Recovery method for poor yield at integrated circuit die panelization

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Quick Facts
Patent No.
US 8,877,523
App. No.
13/166,552
Granted
Nov 4, 2014
Kind
B2
Abstract

A method for making a packaged integrated circuit is provided. The method includes making a first panel of encapsulated die. In some embodiments, if a threshold number of die are not positioned in proper positions in the first panel, the die are separated from the first panel. The separated die are subsequently encapsulated in other panels of encapsulated die. Conductive interconnects can be formed over the other panels. The other panels are then separated into integrated circuit packages.

Claims (46)

1. A method of packaging an integrated circuit die, the method comprising:

forming a first panel comprising a first plurality of integrated circuit die, wherein the first plurality of integrated circuit die are encapsulated in the first panel;

separating the first plurality of integrated circuit die from the first panel if a threshold number of the first plurality of integrated circuit die are not properly placed within the first panel, wherein

a determination of whether the threshold number of the first plurality of integrated circuit die are not properly placed is performed prior to formation or provision of an electrically conductive coupling to any of the first plurality of integrated circuit die, and

said separating is performed prior to the formation or provision of an electrically conductive coupling to any of the first plurality of integrated circuit die;

forming a second panel after said separating, the second panel comprising a second plurality of integrated circuit die, wherein

the second plurality of integrated circuit die are encapsulated in the second panel, and

the second plurality of integrated circuit die comprises at least one integrated circuit die of the first plurality of integrated circuit die separated from the first panel; and

forming a plurality of electrically conductive interconnects over the second panel, wherein the plurality of electrically conductive interconnects are coupled to conductive structures of the second plurality of integrated circuit die of the second panel.

2. The method of claim 1 further comprising:

encapsulating the first plurality of integrated circuit die in the first panel with an active surface of each integrated circuit die of the first plurality of integrated circuit die being exposed at a major surface of the first panel.

3. The method of claim 1 further comprising:

separating the second panel into a plurality of integrated circuit packages, wherein each integrated circuit package of the plurality of integrated circuit packages comprises at least one integrated circuit die of the second plurality of integrated circuit die and at least one interconnect of the plurality of electrically conductive interconnects.

4. The method of claim 1 further comprising:

forming a dielectric layer over a major surface of the second panel; and

forming a plurality of holes in the dielectric layer to expose conductive structures of the second plurality of integrated circuit die, wherein

one or more of the plurality of electrically conductive interconnects are formed on the dielectric layer.

5. The method of claim 1 , wherein

each of the first plurality of integrated circuit die comprise at least one fiducial on a surface of the integration circuit die, and

using a location of the at least one fiducial to determine whether each of the first plurality of integrated circuit die is properly placed.

6. The method of claim 1 wherein said separating the first plurality of integrated circuit die from the first panel comprises sawing the first panel.

7. The method of claim 1 comprising:

performing said separating the first plurality of integrated circuit die from the first panel to minimize an amount of encapsulant of the first panel remaining on the first plurality of integrated circuit die.

8. The method of claim 1 wherein said forming the second panel comprises forming the second panel where the at least one integrated circuit die of the first plurality of integrated circuit die includes a portion of the encapsulant of the first panel.

9. The method of claim 1 further comprising:

removing a remaining portion of an encapsulant of the first panel from the at least one integrated circuit die of the first plurality of integrated circuit die, after said separating and prior to said forming the second panel.

10. The method of claim 1 further comprising:

forming the first panel to further comprise a first encapsulated ground plane; and

forming the second panel to further comprise a second encapsulated ground plane, wherein

said separating comprises cutting the first encapsulated ground plane.

11. The method of claim 1 further comprising:

determining that the threshold number of the first plurality of integrated circuit die are not properly placed within the first panel; and

reducing the thickness of an encapsulant of the first panel, after said determining and prior to said separating.

12. The method of claim 1 wherein said separating the first plurality of integrated circuit die comprises using a laser to cut the panel.

13. The method of claim 12 further comprising:

determining a laser cutting path of the laser that minimizes an amount of encapsulant of the first panel remaining on the first plurality of integrated circuit die.

14. A method of packaging an integrated circuit die, the method comprising:

forming a first panel comprising a first plurality of integrated circuit die, wherein the first plurality of integrated circuit die are encapsulated in the first panel in an encapsulant;

separating the first plurality of integrated circuit die from the first panel, wherein

said separating is performed to minimize an amount of the encapsulant remaining on the first plurality of integrated circuit die, and

said separating is performed prior to formation or provision of an electrically conductive coupling to any of the first plurality of integrated circuit die;

forming, after said separating, a second panel comprising a second plurality of integrated circuit die, wherein

the second plurality of integrated circuit die are encapsulated in the second panel, and

the second plurality of integrated circuit die comprises at least one of the first plurality of integrated circuit die separated from the first panel; and

forming a plurality of electrically conductive interconnects over the second panel, wherein the plurality of electrically conductive interconnects are coupled to conductive structures of the second plurality of integrated circuit die of the second panel.

15. The method of claim 14 wherein no electrically conductive interconnects are formed over the first panel.

Assignments (17)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0387 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0334 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0285 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →