Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus

1. A method of manufacturing a semiconductor device, comprising:

forming a layer containing a predetermined element on a substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel under a condition where a chemical vapor deposition (CVD) reaction is caused;

changing the layer containing the predetermined element into a nitride layer by supplying a nitrogen-containing gas into the process vessel and exhausting the nitrogen-containing gas from the process vessel, wherein an inside of the process vessel is heated and a pressure of the inside of the process vessel is lower than an atmospheric pressure;

forming a nitride film having a predetermined film thickness on the substrate by alternately repeating forming the layer containing the predetermined element and changing the layer containing the predetermined element into the nitride layer; and

purging the inside of the process vessel by supplying an inert gas into the process vessel and exhausting the inert gas from the process vessel between forming the layer containing the predetermined element and changing the layer containing the predetermined element into the nitride layer,

wherein, in forming the layer containing the predetermined element, the source gas is supplied toward the substrate through a nozzle disposed at a side of the substrate, and one of an inert gas and a hydrogen-containing gas is supplied together with the source gas through the nozzle toward the substrate such that a flow velocity of the source gas flowing parallel to a surface of the substrate is greater than that of the inert gas flowing parallel to the surface of the substrate in purging the inside of the process vessel.

2. The method of claim 1 , wherein, in forming the layer containing the predetermined element, a flow rate of one of the inert gas and the hydrogen-containing gas supplied together with the source gas through the nozzle is greater than that of the inert gas supplied through the nozzle in purging the inside of the process vessel.

3. The method of claim 1 , wherein, in forming the layer containing the predetermined element, a flow rate of one of the inert gas and the hydrogen-containing gas supplied together with the source gas through the nozzle is greater than that of the source gas.

4. The method of claim 1 , wherein, in forming the layer containing the predetermined element, a flow rate of one of the inert gas and the hydrogen-containing gas supplied together with the source gas through the nozzle is ten to thirty times greater than that of the source gas.

5. The method of claim 1 , wherein the flow rate is a volumetric flow rate.

6. The method of claim 1 , wherein, in forming the layer containing the predetermined element, the layer containing the predetermined element is formed while suppressing at least one of a deposition and an adsorption of the layer containing the predetermined element by an action of one of the inert gas and the hydrogen-containing gas supplied together with the source gas through the nozzle.

7. The method of claim 1 , wherein one of the inert gas and the hydrogen-containing gas supplied toward the substrate together with the source gas through the nozzle is supplied into a source gas supply pipe from a supply pipe connected to the source gas supply pipe, the source gas supply pipe being connected to the nozzle and configured to supply the source gas into the nozzle.

8. The method of claim 1 , wherein, in forming the nitride film, a temperature of the substrate ranges from 350° C. to 950° C.

9. The method of claim 1 , wherein, in forming the nitride film, a temperature of the substrate ranges from 700° C. to 950° C.

10. The method of claim 1 , wherein, in forming the nitride film, a temperature of the substrate ranges from 750° C. to 950° C.

11. The method of claim 1 , wherein, in forming the nitride film, a temperature of the substrate ranges from 800° C. to 950° C.

12. A method of processing a substrate, comprising:

forming a layer containing a predetermined element on a substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel under a condition where a chemical vapor deposition (CVD) reaction is caused;

changing the layer containing the predetermined element into a nitride layer by supplying a nitrogen-containing gas into the process vessel and exhausting the nitrogen-containing gas from the process vessel, wherein an inside of the process vessel is heated and a pressure of the inside of the process vessel is lower than an atmospheric pressure;

forming a nitride film having a predetermined film thickness on the substrate by alternately repeating forming the layer containing the predetermined element and changing the layer containing the predetermined element into the nitride layer; and

purging the inside of the process vessel by supplying an inert gas into the process vessel and exhausting the inert gas from the process vessel between forming the layer containing the predetermined element and changing the layer containing the predetermined element into the nitride layer,

wherein, in forming the layer containing the predetermined element, the source gas is supplied toward the substrate through a nozzle disposed at a side of the substrate, and one of an inert gas and a hydrogen-containing gas is supplied together with the source gas through the nozzle toward the substrate such that a flow velocity of the source gas flowing parallel to a surface of the substrate is greater than that of the inert gas flowing parallel to the surface of the substrate in purging the inside of the process vessel.