Compositions and processes for immersion lithography
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
1. An immersion lithography system comprising:
(a) a substrate having thereon:
a coating layer of a photoresist composition, the photoresist composition comprising in admixture:
(i) one or more resins which comprise one or more photoacid-labile groups,
(ii) a photoactive component, and
(iii) one or more resins that (1) comprise one or more photoacid-labile groups and (2) are substantially non-mixable with the (i) one or more resins, whereby the (iii) one or more resins migrate toward upper portions of a coating layer of the photoresist composition layer during application of the photoresist on the substrate, and (3) comprise 1) Si substitution, 2) fluorine substitution, 3) hyperbranched polymers; and/or 4) polymeric particles; and
(b) an immersion lithography apparatus.
2. The substrate of claim 1 wherein the one or more substantially non-mixable resins comprise aqueous base-solubilizing groups.
3. The substrate of claim 1 wherein the (iii) one or more substantially resins comprise fluorine substitution.
4. The substrate of claim 1 wherein the (iii) one or more resins comprise Si substitution.
5. The substrate of claim 1 wherein the photoresist composition comprises a resin that comprises fluoroalcohol groups.
6. The substrate of claim 1 wherein the photoresist composition comprises a resin that comprises a hexafluoroalcohol moiety.
7. The method of claim 1 wherein the (iii) one or more resins comprise photoacid-labile acetal groups.
8. The method of claim 1 wherein the (iii) one or more resins comprise photoacid-labile ester groups.
9. An immersion lithography system comprising:
(a) a substrate having thereon:
a coating layer of a photoresist composition, the photoresist composition comprising in admixture:
(i) one or more resins which comprise one or more photoacid-labile groups,
(ii) a photoactive component, and
(iii) one or more resins that comprise 1) Si substitution, 2) fluorine substitution, 3) hyperbranched polymers; and/or 4) polymeric particles, whereby the (iii) one or more resins migrate toward upper portions of a coating layer of the photoresist composition layer during application of the photoresist on the substrate; and
(b) an immersion lithography apparatus.
10. The substrate of claim 9 wherein the (iii) one or more substantially resins comprise fluorine substitution.
11. The substrate of claim 9 wherein the (iii) one or more resins comprise Si substitution.
12. The system of claim 1 wherein the (iii) one or more resins have a smaller hydrodynamic volume than the (i) one or more resins.
13. The system of claim 1 wherein the (iii) one or more resins are present in the photoresist composition in an amount of 0.1 to 20 weight percent based on total weight of the fluid photoresist composition.
14. The system of claim 1 wherein the (iii) one or more resins are present in the photoresist composition in an amount of up to 1 weight percent based on total solids of the photoresist composition.
15. The system of claim 1 wherein the (iii) one or more resins are present in the photoresist composition in an amount of up to 2 weight percent based on total solids of the photoresist composition.
16. The system of claim 11 wherein the (iii) one or more resins are present in the photoresist composition in an amount of up to 3 weight percent based on total solids of the photoresist composition.
17. The system of claim 1 wherein the photoresist composition provides a decreased amount of acid or organic material detected in immersion fluid associated with an immersion exposure relative to the same photoresist composition that does not comprise the (iii) one or more resins.
18. The system of claim 9 wherein the (iii) one or more resins have a smaller hydrodynamic volume than the (i) one or more resins.
19. The system of claim 9 wherein the (iii) one or more resins are present in the photoresist composition in an amount of 0.1 to 20 weight percent based on total weight of the fluid photoresist composition.
20. The system of claim 9 wherein the (iii) one or more resins are present in the photoresist composition in an amount of up to 1 weight percent based on total solids of the photoresist composition.
21. The system of claim 9 wherein the (iii) one or more resins are present in the photoresist composition in an amount of up to 2 weight percent based on total solids of the photoresist composition.
22. The system of claim 9 wherein the (iii) one or more resins are present in the photoresist composition in an amount of up to 3 weight percent based on total solids of the photoresist composition.
23. The system of claim 9 wherein the photoresist composition provides a decreased amount of acid or organic material detected in immersion fluid associated with the immersion exposure relative to the same photoresist composition that does not comprise the (iii) one or more resins.
24. An immersion lithography system comprising:
(a) a substrate having thereon:
a coating layer of a photoresist composition, the photoresist composition comprising in admixture:
(i) one or more resins,
(ii) a photoactive component, and
(iii) one or more resins that are substantially non-mixable with the one or more resins, and/or comprise 1) Si substitution, 2) fluorine substitution, 3) hyperbranched polymers; and/or 4) polymeric particles; and
(b) an immersion lithography apparatus.
25. The system of claim 24 wherein the (iii) one or more substantially resins comprise fluorine substitution.
26. The system of claim 24 wherein the (iii) one or more resins are present in the photoresist composition in an amount of 0.1 to 20 weight percent based on total weight of the fluid photoresist composition.
27. The system of claim 24 wherein the (iii) one or more resins are present in the photoresist composition in an amount of up to 1 weight percent based on total solids of the photoresist composition.
28. The system of claim 24 wherein the (iii) one or more resins are present in the photoresist composition in an amount of up to 2 weight percent based on total solids of the photoresist composition.
29. The system of claim 24 wherein the (iii) one or more resins are present in the photoresist composition in an amount of up to 3 weight percent based on total solids of the photoresist composition.
30. The system of claim 24 wherein the photoresist composition comprises a resin that comprises fluoroalcohol groups.
31. The system of claim 24 wherein the photoresist composition comprises a resin that comprises a hexafluoroalcohol moiety.
32. The system of claim 24 wherein the (iii) one or more resins comprise photoacid-labile acetal groups.
33. The system of claim 24 wherein the (iii) one or more resins comprise photoacid-labile ester groups.