Resin molded semiconductor device and manufacturing method thereof
View Patent ↗This invention is directed to provide a method of manufacturing a resin molded semiconductor device with high reliability by preventing a resin leakage portion from occurring due to burrs on a lead frame formed by punching. The method of manufacturing the resin molded semiconductor device according to the invention includes bonding a semiconductor die on an island in a lead frame, electrically connecting the semiconductor die with the lead frame, resin-molding the lead frame on which the semiconductor die is bonded, and applying prior to the resin-molding a compressive pressure that is higher than a clamping pressure applied in the resin-molding to a region of the lead frame being clamped by molds in the resin-molding of the lead frame.
1. A resin molded semiconductor device, comprising:
a lead frame;
a semiconductor die bonded to the lead frame and electrically connected to the lead frame; and
a resin package housing the lead frame and the semiconductor die,
wherein the lead frame comprises a dent portion extending from inside the resin package to outside the resin package, and
a surface roughness of the dent portion is smaller than a surface roughness of the lead frame not having the dent portion.
2. The device of claim 1 , further comprising a bonding wire electrically connecting the semiconductor die and the lead frame.
3. The device of claim 1 , wherein the semiconductor die comprises a high electrical conductivity device.
4. The device of claim 3 , wherein the high electrical conductivity device is a power device.
5. The device of claim 1 , wherein a thickness of the lead frame is 0.2 to 0.5 mm.
6. The device of claim 5 , wherein the dent is deep enough to anchor the lead frame to the resin package.
7. The device of claim 1 , wherein the semiconductor die comprises a medium electrical conductivity device.
8. The device of claim 1 , wherein a thickness of the lead frame is 0.1 to 0.2 mm.
9. The device of claim 8 , wherein the dent has a depth larger than the thickness of the lead frame so as to anchor the lead frame to the resin package and small enough to be housed in the resin package.
10. The device of claim 1 , wherein the device is part of a single in-line package.
11. The device of claim 1 , wherein the device is part of a quad flat package.
12. A resin molded semiconductor device, comprising:
a semiconductor die bonded to an island and electrically connected to an innerlead with a bonding wire and housed in a resin package; and
an outerlead exposed from the resin package,
wherein a combined outerlead and innerlead comprise a dent portion extending from inside the resin package to outside the resin package so that in plan view of the semiconductor device the dent portion extends from the resin package, and the dent is formed in the combined outerlead and innerlead so as to be located on a top side of the semiconductor device on which the semiconductor die is disposed.
13. The device of claim 12 , wherein the semiconductor die comprises a high electrical conductivity device.
14. The device of claim 13 , wherein the high electrical conductivity device is a power device.
15. The device of claim 12 , wherein a thickness of the innerlead is 0.2 to 0.5 mm.
16. The device of claim 15 , wherein the dent is deep enough to anchor the innerlead to the resin package.
17. The device of claim 12 , wherein the semiconductor die comprises a medium electrical conductivity device.
18. The device of claim 12 , wherein a thickness of the innerlead is 0.1 to 0.2 mm.
19. The device of claim 18 , wherein the dent has a depth larger than the thickness of the innerlead so as to anchor the innerlead to the resin package and small enough to be housed in the resin package.
20. The device of claim 12 , wherein the device is part of a single in-line package or a quad flat package.