Method of manufacturing a semiconductor device and substrate processing apparatus
A method of manufacturing a semiconductor device includes conveying a first substrate provided with an opposing surface having insulator regions and a semiconductor region exposed between the insulator regions and a second substrate provided with an insulator surface exposed toward the opposing surface of the first substrate, into a process chamber in a state that the second substrate is arranged in to face the opposing surface of the first substrate, and selectively forming a silicon-containing film with a flat surface at least on the semiconductor region of the opposing surface of the first substrate by heating an inside of the process chamber and supplying at least a silicon-containing gas and a chlorine-containing gas into the process chamber.
1. A method of manufacturing a semiconductor device, comprising:
conveying a first substrate provided with an opposing surface including insulator regions and a semiconductor region exposed between the insulator regions and a second substrate provided with an insulator surface exposed toward the opposing surface of the first substrate, into a process chamber in a state that the second substrate is arranged to face the opposing surface of the first substrate;
selectively forming a silicon-containing film with a flat surface at least on the semiconductor region of the opposing surface of the first substrate by heating an inside of the process chamber and supplying at least a silicon-containing gas and a chlorine-containing gas into the process chamber; and
wherein selectively forming a silicon-containing film includes causing a material formed by decomposition of the silicon-containing gas and the chlorine-containing gas in a gaseous layer within the process chamber to be adsorbed to at least a rear surface of the second substrate and the semiconductor region of the first substrate.
2. The method of claim 1 , wherein the second substrate is configured such that a semiconductor region is exposed between insulator regions on the opposite surface of the second substrate from the opposing surface of the first substrate, and wherein selectively forming a silicon film includes selectively forming a silicon-containing film with a flat surface on the semiconductor region of the opposite surface of the second substrate.
3. The method of claim 1 , wherein the silicon-containing gas is at least one type of gas selected from the group consisting of a silane gas, a disilane gas and a dichlorosilane gas, and the chlorine-containing gas is at least one type of gas selected from the group consisting of a chlorine gas and a hydrogen chloride gas.
4. The method of claim 1 , wherein the insulator regions of the first substrate and the insulator surface of the second substrate are made of silicon oxide or silicon nitride and the semiconductor region of the first substrate is made of silicon.
5. The method of claim 1 , wherein the insulator regions are substantially flush with the semiconductor region.
6. A method of manufacturing a semiconductor device, comprising:
providing a plurality of substrates each provided with a front surface and a rear surface, the front surface including insulator regions and a semiconductor region arranged between the insulator regions, at least the semiconductor region of the front surface being covered with an oxide film, the rear surface being covered with an oxide film;
removing the oxide film formed on the semiconductor region of the front surface while keeping intact the oxide film formed on the rear surface;
conveying the substrates, in which the oxide film formed on the semiconductor region is removed with the oxide film formed on the rear surface remaining intact, into a process chamber in a state that the substrates are stacked one above another at a predetermined interval; and
selectively forming a silicon-containing film on the semiconductor region of each of the substrates by heating the process chamber and supplying at least a silicon-containing gas and a chlorine-containing gas into the process chamber.
7. The method of claim 6 , wherein the selectively forming a silicon-containing film includes selectively forming a silicon-containing film with a flat surface on the semiconductor region of each of the substrates.
8. The method of claim 6 , wherein the silicon-containing gas is at least one type of gas selected from the group consisting of a silane gas, a disilane gas and a dichlorosilane gas, and the chlorine-containing gas is at least one type of gas selected from the group consisting of a chlorine gas and a hydrogen chloride gas.
9. The method of claim 6 , wherein the insulator regions are made of silicon oxide or silicon nitride and the semiconductor region is made of silicon.
10. The method of claim 6 , wherein the insulator regions are substantially flush with the semiconductor region.
11. The method of claim 6 , wherein the removing the oxide film includes supplying water to the rear surface of each of the substrates while supplying a hydrofluoric-acid-containing material to the front surface of each of the substrates, to remove the oxide film formed on the semiconductor region of the front surface while keeping intact the oxide film formed on the rear surface.