Semiconductor devices with gate-source ESD diode and gate-drain clamp diode
A semiconductor power device integrated with a Gate-Source ESD diode for providing an electrostatic discharge (ESD) protection and a Gate-Drain clamp diode for drain-source avalanche protection. The semiconductor power device further includes a Nitride layer underneath the diodes and a thick oxide layer as an etching stopper layer for protecting a thin oxide layer on top surface of body region from over-etching.
1. A semiconductor power device comprising a Gate-Source ESD (electrostatic discharge) diode connected between a gate metal and a source metal for providing Gate-Source ESD protection, and a Gate-Drain clamp diode connected between said gate metal and a drain metal for drain-source avalanche protection on single chip, said semiconductor power device further comprising:
an insulation oxide layer comprising a separately formed thick oxide layer on top of a Nitride layer and a thin oxide layer for completely insulating said Gate-Source ESD diode and said Gate-Drain clamp diode from a body region, said Nitride layer sandwiched between said thick oxide layer and said thin oxide layer functioning as dry oxide etching stopper for preventing said body region from damage during dry oxide etching process.
2. The semiconductor power device of claim 1 , wherein said Nitride layer having a thickness from 500 to 2000 angstroms.
3. The semiconductor power device of claim 1 , wherein said thick oxide layer being CVD oxide.
4. The semiconductor power device of claim 1 , wherein said thick oxide layer having a thickness greater than 1000 angstroms.
5. The semiconductor power device of claim 1 , wherein said Gate-Source ESD diode and said Gate-Drain clamp diode further comprising multiple doped poly-silicon regions with alternating N type and P type regions.
6. The semiconductor power device of claim 1 further comprising:
a thick oxide interlayer covering said semiconductor power device;
said Gate-Source ESD diode wherein said thick oxide interlayer having a plurality of trenched contact plugs disposed in contact trenches penetrating through said thick oxide interlayer wherein some of said trenched contact plugs in electrical contact with a source region and said body region and said source metal and one electrode of said Gate-Source ESD diode, and other of said trenched contact plugs in electrical contact with at least a trenched gate and said gate metal and also with another electrode of said Gate-Source ESD diode; and
said Gate-Drain clamp diode wherein said thick oxide interlayer having a plurality of trenched contact plugs disposed in contact trenches penetrating through said thick oxide interlayer wherein some of said trenched contact plugs in electrical contact with a drain region, said drain metal and one electrode of said Gate-Drain clamp diode, and other of said trenched contact plugs in electrical contact with at least a trenched gate, said gate metal and another electrode of said Gate-Drain clamp diode.
7. The semiconductor power device of claim 6 , wherein said trenched contact plugs comprising tungsten plugs.
8. The semiconductor power device of claim 7 , wherein said trenched contact plugs further comprising tungsten plugs surrounded by a Ti/TiN or Co/TiN barrier layer.
9. The semiconductor power device of claim 1 , wherein said semiconductor power device further comprising a metal oxide semiconductor field effect transistor (MOSFET) device.
10. The semiconductor power device of claim 1 , wherein said semiconductor power device further comprising an Insulated gate bipolar transistor (IGBT).
11. The semiconductor power device of claim 1 , wherein said Nitride layer only disposed underneath said Gate-Source ESD diode and said Gate-Drain Clamp diode.
12. The semiconductor power device of claim 1 further comprising a deep body region underneath said Gate-Source ESD diode and said Gate-Drain clamp diode wherein said deep body region overlaps with said body region, having junction depth deeper than said body region.