IP Library Granted Patent US 8,610,294
Granted Patent B2
US 8,610,294 · App. 13/187,883 · Granted Dec 17, 2013

Laser processing method and semiconductor device obtained by using the processing method

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Quick Facts
Patent No.
US 8,610,294
App. No.
13/187,883
Granted
Dec 17, 2013
Kind
B2
Abstract

A conventional laser processing method has a problem that the number of scanning lines is large, and it is difficult to shorten the time needed for the marking. In a laser processing method of the present invention, a first laser processing is performed in accordance with the outer border of, for example, an English letter “A,” and thereafter, second and subsequent laser processings are performed on an inner region inside the outer border. In this event, for the second and subsequent laser processings, the respective processing lines (scanning lines) are set up in a longitudinal direction of a processing region. Thus, the number of processing lines is greatly reduced. As a result, the time needed for the marking is greatly shortened, and the laser marking workability is improved.

Claims (22)

1. A laser processing method for marking a processing target with at least one of a letter and a figure, the at least one of a letter and a figure being characterized by a processing region having an outer border, the method comprising steps of:

setting a plurality of processing lines in the processing region of the letter or figure to be marked; and

delivering a laser beam to the processing target to mark the processing target along each of the plurality of processing lines, wherein

a first processing line is set along the outer border of the processing region, and each subsequent processing line is set along a longitudinal direction of the processing region,

after the laser beam is delivered along the first processing line set along the outer border of the processing region, the laser beam is delivered along a subsequent processing line set inside the outer border of the processing region,

when the laser beam is delivered to the processing target, a laser spot is formed on the processing target along each processing line, a center of the laser spot having energy stronger than a periphery of the laser spot, the center of the laser spot engraving the processing target deeper than the periphery of the laser spot, and

the adjacent processing lines are arranged so that a region of the processing target which is engraved by two overlapping laser spots on the respective adjacent processing lines has a depth less than that created by the center of the laser spot.

2. The laser processing method according to claim 1 , wherein:

the letter or figure to be marked has a plurality of line widths,

the plurality of processing lines are set in the processing region, and

the processing lines do not intersect each other.

3. The laser processing method according to claim 1 , wherein

the letter or figure to be marked has a single line width,

the plurality of processing lines are set to cover the entire processing region of the letter or figure, and the processing lines are ordered, and

a distance between an end of one processing line and a beginning of a successive processing line is shorter than a spot diameter of the laser beam.

4. The laser processing method according to claim 1 , wherein delivering the laser beam along the first processing line on the outer border is performed in a unicursal approach.

5. The laser processing method according to claim 2 , wherein delivering the laser beam along the first processing line on the outer border is performed in a unicursal approach.

6. The laser processing method according to claim 3 , wherein delivering the laser beam along the first processing line on the outer border is performed in a unicursal approach.

7. A semiconductor device in which a surface of a package is marked by the laser processing method according to claim 1 .

8. A semiconductor device in which a surface of a package is marked by the laser processing method according to claim 2 .

9. A semiconductor device in which a surface of a package is marked by the laser processing method according to claim 3 .

10. A semiconductor device in which a surface of a package is marked by the laser processing method according to claim 4 .

Assignments (6)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2014
From: ON SEMICONDUCTOR TRADING SARL
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 032035/0470 →
CHANGE OF NAME Recorded Jan 23, 2014
From: ON SEMICONDUCTOR TRADING, LTD.
To: ON SEMICONDUCTOR TRADING SARL
Reel/Frame 032143/0286 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 21, 2011
From: HASEGAWA, YUTAKA; SHIRAISHI, MASAAKI
To: ON SEMICONDUCTOR TRADING, LTD.
Reel/Frame 026629/0151 →