IP Library Granted Patent US 8,920,572
Granted Patent B2
US 8,920,572 · App. 13/211,306 · Granted Dec 30, 2014

Cleaning device and a cleaning method of a fixed abrasives polishing pad

Inventor: Feng Chen (Shanghai, CN)
Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
B24B53/017B24B37/245
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,920,572
App. No.
13/211,306
Granted
Dec 30, 2014
Kind
B2
Abstract

A device for cleaning a fixed abrasive polishing pad includes a main body having a surface facing the polishing pad, an inlet coupled to an end of the main body and configured to supply a cleaning liquid, an inject orifice coupled to the inlet for injecting the cleaning liquid and being provided on the surface of the main body, an outlet coupled to the end of the main body, and a recycle orifice coupled to the outlet, and being provided on the surface of the main body.

Claims (14)

1. A method for cleaning a fixed abrasive polishing pad using a cleaning device, comprising:

providing a fixed abrasive polishing pad on a rotatable polishing table;

providing the cleaning device over the fixed abrasive polishing pad;

starting up the polishing table to rotate the polishing pad;

providing a cleaning liquid for cleaning the fixed abrasive polishing pad using the cleaning device;

supplying the cleaning liquid through a cleaning liquid inlet to spray the cleaning liquid through one or more inject orifices of a plurality of inject orifices;

recycling the cleaning liquid through one or more recycle orifices of a plurality of recycle orifices that are coupled with a cleaning liquid outlet of the cleaning device such that the cleaning liquid for recycling is absorbed to flow out through the cleaning liquid outlet;

rotating the polishing table at a first rotation speed to polish a wafer, in the meantime, operating the one or more inject orifices by supplying the cleaning liquid and simultaneously operating the one or more recycle orifices by recycling the cleaning liquid; and

after rotating the polishing table at the first rotation speed, immediately rotating the polishing table at a second rotation speed and stopping the operating of the one or more inject orifices, while continuing the operating of the one or more recycle orifices, wherein the second rotation speed is higher than the first rotation speed, the first rotation speed ranges from about 5 rpm to about 20 rpm, and the second rotation speed ranges from about 50 rpm to about 200 rpm.

2. The method of claim 1 , where a distance between each of an inject orifice and a recycle orifice and the fixed abrasive polishing pad ranges about 1 mm to about 10 mm.

3. The method of claim 1 , wherein while the polishing table rotates at the first rotation speed, the one or more inject orifices spray the cleaning liquid at a first flow rate and the one or more recycle orifices absorb the cleaning liquid at a second flow rate that is higher than the first flow rate.

4. The method of claim 3 , wherein the first flow rate is between 200 ml/min and 1000 ml/min.

5. The method of claim 3 , wherein the second flow rate is between 1000 ml/min and 5000 ml/min.

6. The method of claim 1 , wherein the cleaning liquid is deionized water.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 17, 2011
From: CHEN, FENG
To: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
Reel/Frame 026765/0905 →
Priority Claims (1)
CN 2010 1 0613438 · Dec 29, 2010 · national
Continuity (1)
Related Publication 20120167924A1 · Jul 5, 2012