Implant for performance enhancement of selected transistors in an integrated circuit
View Patent ↗A first implant is performed into a substrate to form a well in which a plurality of transistors will be formed. Each transistor of a first subset of the plurality of transistors to be formed has a width that satisfies a predetermined width constraint and each transistor of a second subset has a width that does not satisfy the constraint. A second implant is performed at locations in the well in which transistors of the first subset will be formed and not at locations in the well in which transistors of the second subset will be formed. The transistors are formed, wherein a channel region of each transistor of the first subset is formed in a portion of the substrate which received the second implant and a channel region of each transistor of the second subset is formed in a portion of the substrate which did not receive the second implant.
1. A method for forming a semiconductor structure, the method comprising:
performing a first implant into a semiconductor substrate to form a well in which a plurality of transistors of a same conductivity type will be formed, wherein each transistor of a first subset of the plurality of transistors to be formed has a transistor width that satisfies a predetermined width constraint and each transistor of a second subset of the plurality of transistors to be formed has a transistor width that does not satisfy the predetermined width constraint, and wherein the first subset and the second subset are mutually exclusive;
performing a second implant into the semiconductor substrate such that the second implant enters the semiconductor substrate at locations in the well in which transistors of the first subset of the plurality of transistors will be formed and does not enter the semiconductor substrate at locations in the well in which transistors of the second subset of the plurality of transistors will be formed, wherein the performing the second implant comprises implanting a dopant having a conductivity type opposite a conductivity type of a dopant implanted during the first implant; and
forming the plurality of transistors in the well, wherein a channel region of each transistor of the first subset of the plurality of transistors is formed in a portion of the semiconductor substrate which received the second implant and a channel region of each transistor of the second subset of the plurality of transistors is formed in a portion of the semiconductor substrate which did not receive the second implant.
2. The method of claim 1 , further comprising:
prior to performing the second implant, forming a patterned masking layer over the semiconductor substrate, wherein the patterned masking layer exposes locations in the well in which transistors of the first subset of the plurality of transistors will be formed and does not expose locations in the well in which transistors of the second subset of the plurality of transistors will be formed,
wherein the step of performing the second implant uses the patterned masking layer to perform the second implant.
3. The method of claim 2 , wherein prior to forming the plurality of transistors in the well, the method further comprises removing the patterned masking layer.
4. The method of claim 1 , wherein forming the plurality of transistors in the well is further characterized in that the transistors of the first subset of the plurality of transistors has a first threshold voltage and the transistors of the second subset has a second threshold voltage greater than the first threshold voltage.
5. The method of claim 1 , wherein forming the plurality of transistors in the well is further characterized in that each transistor of the first subset of the plurality of transistors has a transistor width which satisfies the predetermined width constraint by being less than a predetermined transistor width and each transistor of the second subset of the plurality of transistors has a transistor width which does not satisfy the predetermined width constraint by not being less than the predetermined transistor width.
6. The method of claim 1 , wherein forming the plurality of transistors in the well comprises:
forming a gate electrode for each transistor of the plurality of transistors; and
forming a first source/drain region adjacent a first sidewall of each gate electrode and a second source/drain region adjacent a second sidewall of each gate electrode, wherein the channel region of each transistor of the plurality of transistors is located under the gate electrode of the transistor, between the first and second source/drain regions of each transistor.
7. The method of claim 6 , wherein forming the plurality of transistors in the well is further characterized in that a first transistor of the first subset of transistors is immediately adjacent a second transistor of the second subset of transistors, wherein the first transistor and the second transistor share a source/drain region.
8. The method of claim 1 , wherein forming the plurality of transistors in the well is further characterized in that a resultant dopant concentration of the channel regions of the transistors of the first subset of the plurality of transistors is less than a resultant dopant concentration of the channel regions of the transistors of the second subset of the plurality of transistors.
9. A method for forming a semiconductor structure, the method comprising:
performing a first implant into a semiconductor substrate to form a well in which a plurality of transistors of a same conductivity type will be formed, wherein each transistor of a first subset of the plurality of transistors to be formed has a transistor width less than a predetermined width and each transistor of a second subset of the plurality of transistors to be formed has a transistor width not less than the predetermined width, and wherein the first subset and the second subset are mutually exclusive;
forming a patterned masking layer over the semiconductor substrate and the well, wherein the patterned masking layer exposes locations of the semiconductor substrate in the well in which transistors of the first subset of the plurality of transistors will be formed and does not expose locations of the semiconductor substrate in the well in which transistors of the second subset of the plurality of transistors will be formed;
performing a second implant into the semiconductor substrate using the patterned masking layer such that the second implant enters the semiconductor substrate at the locations exposed by the patterned masking layer;
removing the patterned masking layer; and
forming the plurality of transistors in the well, wherein a channel region of each transistor of the first subset of the plurality of transistors is formed in a portion of the semiconductor substrate which received the second implant and a channel region of each transistor of the second subset of the plurality of transistors is formed in a portion of the semiconductor substrate which did not receive the second implant.
10. The method of claim 9 , wherein performing the second implant into the semiconductor substrate comprises:
implanting a dopant having a conductivity type opposite a conductivity type of a dopant implanted during the first implant.
11. The method of claim 9 , wherein performing the second implant into the semiconductor substrate comprises:
implanting a same dopant as was implanted during the first implant.
12. The method of claim 9 , wherein forming the plurality of transistors in the well is further characterized in that the transistors of the first subset of the plurality of transistors has a first threshold voltage and the transistors of the second subset has a second threshold voltage greater than the first threshold voltage.
13. The method of claim 9 , wherein forming the plurality of transistors in the well comprises:
forming a gate electrode for each transistor of the plurality of transistors; and
forming a first source/drain region adjacent a first sidewall of each gate electrode and a second source/drain region adjacent a second sidewall of each gate electrode, wherein the channel region of each transistor of the plurality of transistors is located under the gate electrode of the transistor, between the first and second source/drain regions of the transistor.
14. The method of claim 13 , wherein forming the plurality of transistors in the well is further characterized in that a first transistor of the first subset of transistors is immediately adjacent a second transistor of the second subset of transistors, wherein the first transistor and the second transistor share a source/drain region.
15. The method of claim 9 , wherein forming the plurality of transistors in the well is further characterized in that a resultant dopant concentration of the channel regions of the transistors of the first subset of the plurality of transistors is less than a resultant dopant concentration of the channel regions of the transistors of the second subset of the plurality of transistors.
16. A method for forming a semiconductor structure, the method comprising:
performing a first implant into a semiconductor substrate to form a well in which a plurality of transistors of a same conductivity type will be formed, wherein each transistor of a first subset of the plurality of transistors to be formed has a transistor width that satisfies a predetermined width constraint and each transistor of a second subset of the plurality of transistors to be formed has a transistor width that does not satisfy the predetermined width constraint, and wherein the first subset and the second subset are mutually exclusive;
performing a second implant into the semiconductor substrate such that the second implant enters the semiconductor substrate at locations in the well in which transistors of the first subset of the plurality of transistors will be formed and does not enter the semiconductor substrate at locations in the well in which transistors of the second subset of the plurality of transistors will be formed; and
forming the plurality of transistors in the well, wherein a channel region of each transistor of the first subset of the plurality of transistors is formed in a portion of the semiconductor substrate which received the second implant and a channel region of each transistor of the second subset of the plurality of transistors is formed in a portion of the semiconductor substrate which did not receive the second implant,
wherein forming the plurality of transistors in the well is further characterized in that each transistor of the first subset of the plurality of transistors has a transistor width which satisfies the predetermined width constraint by being less than a predetermined transistor width and each transistor of the second subset of the plurality of transistors has a transistor width which does not satisfy the predetermined width constraint by not being less than the predetermined transistor width.