Low-cost 3D face-to-face out assembly
View Patent ↗An electronic device includes first and second electronic device dice. The first electronic device die is embedded within a resin layer. A dielectric layer is located over the device die and the resin layer. First interconnects within the dielectric layer connect a first subset of electrical contacts on the first electronic device to corresponding terminals at a surface of the dielectric that are located over the first electronic device. Second interconnects within the dielectric layer connect a second subset of electrical contacts on the first electronic device to corresponding bump pads at a surface of the dielectric that are located over the resin layer.
1. An electronic device, comprising:
a resin layer;
a first electronic device die having an active surface and an opposite surface of a bulk semiconductor layer, wherein said first electronic device die is embedded within said resin layer, and said active surface is not covered by said resin layer;
a second electronic device die having an second active surface and an opposite second surface of another bulk semiconductor layer, wherein said active surface and said second active surface face each other;
a dielectric layer located over said active surface of said first electronic device die and said resin layer;
first interconnects within said dielectric layer that connect a first subset of electrical contacts on said active surface of said first electronic device die to corresponding terminals at a surface within a portion of said dielectric layer laying in between said first electronic device die and said second electronic device die, wherein said corresponding terminals are located over said first electronic device die, are located between said first and said second electronic device dies and, are part of electrical signal paths between said active surface said second active surface; and
second interconnects within said dielectric layer that connect a second subset of electrical contacts on said active surface of said first electronic device die to corresponding bump pads at a surface of said dielectric layer located over said resin layer and wherein said corresponding bump pads are located outside of said portion of said dielectric layer.
2. The electronic device of claim 1 , wherein said electrical signal paths between said active surface and said second active surface are less than about 50 μm.
3. The electronic device of claim 1 , wherein said opposite surface of said bulk semiconductor surface of said electronic device die is not covered by said resin layer and is about coplanar with a side of said resin layer.
4. The electronic device of claim 1 , wherein said second opposite surface of said second electronic device die contacts one or more metal heat transfer features located on an electronic system substrate of said electronic device.
5. The electronic device of claim 1 , wherein said dielectric layer comprises BCB or polyimide.
6. The electronic device of claim 1 , wherein said second active surface of said second electronic device die have a third subset of electrical contacts that are electrically connected to said corresponding terminals at said surface within said portion of said dielectric layer.
7. The electronic device of claim 1 , further comprising an electronic system substrate, wherein said corresponding bump pads are electrically connected to terminals on said electronic system substrate by solder bumps.
8. The electronic device of claim 1 , wherein said second opposite surface of said second electronic device die is in thermal contact with an electronic system substrate of said electronic device.
9. The electronic device of claim 1 , wherein said opposite surface of said first electronic device die is not covered by said resin layer and is in thermal contact with a heat sink of said electronic device.
10. The electronic device of claim 9 , wherein said second opposite surface of said second electronic device die is in thermal contact with second heat sink of said electronic device.
11. A method of forming an electronic device, comprising:
embedding a first electronic device die having an active surface and an opposite surface of a bulk semiconductor layer within a resin layer, wherein said active surface is not covered by said resin layer;
forming a dielectric layer over said active surface of said first electronic device die and said resin layer;
forming first interconnects within said dielectric layer that connect a first subset of electrical contacts on said active surface of said first electronic device die to corresponding terminals at a surface within a portion of said dielectric layer, wherein said corresponding terminals are located over said first electronic device die;
forming second interconnects within said dielectric layer that connect a second subset of electrical contacts on said active surface of said first electronic device die to corresponding bump pads at a surface of said dielectric layer located over said resin layer;
providing a second electronic device die having an second active surface and an opposite second surface of another bulk semiconductor layer, wherein said active surface and said second active surface face each other; and
connecting a third subset of electrical contacts of said second electronic device die to said corresponding terminals at said surface within said portion of said dielectric layer, wherein:
said portion of said dielectric layer lies in between said first electronic device die and said second electronic device die,
said corresponding terminals are located between said first and said second electronic device dies and are part of electrical signal paths between said active surface said second active surface, and
said corresponding bump pads are located outside of said portion of said dielectric layer.
12. The method of claim 11 , wherein said electrical signal paths between said active side said second active side are less than about 50 μm.
13. The method of claim 11 , wherein said dielectric layer comprises BCB or polyimide.
14. The method of claim 11 , wherein said opposite surface of said first electronic device die is not covered by said resin layer and is about coplanar with a surface of said resin layer.
15. The method of claim 11 , further including placing one or more metal heat transfer features located on an electronic system substrate of said electronic device in thermal contact with said second opposite surface of said second electronic device die.
16. The method of claim 11 , wherein connecting said third subset of electrical contacts of said second electronic device die to said corresponding terminals further includes coupling micro solder bumps to said third subset of electrical contacts and to said corresponding terminals.
17. The method of claim 11 , further including placing a first heat sink in thermal contact with said opposite surface of said first electronic device die and placing a second heat sink in thermal contact with said second opposite surface of said second electronic device die.
18. The method of claim 11 , further including electrically connecting said corresponding bump pads to terminals on an electronic system substrate.
19. The method of claim 11 , wherein said second opposite surface of said second electronic device die is in thermal contact with an electronic system substrate of said electronic device.
20. The method of claim 11 , further including forming solder bumps on said corresponding bump pads such that a height of said solder bumps above said dielectric layer is greater than a height of an upper surface of said second electronic device die above said dielectric layer.