IP Library › Patent Application 13225495
Patent Application
App. No. 13/225,495

Hierarchical Wafer Yield Predicting Method and Hierarchical Lifetime Predicting Method

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Patent No.
US None
App. No.
13/225,495
Abstract

For improving wafer fabrication, yield and lifetime of wafers are predicted by determining coefficients of a yield/lifetime domain, an integral domain, an electric/layout domain, a metrology/defect domain, and a machine sensor domain in a hierarchical manner. With the aid of the hierarchically-determined coefficients, noises in prediction can be reduced so that precision of prediction results of the yields or the lifetimes of wafers can be raised.

Claims (52)

1 . A hierarchical wafer yield predicting method comprising:

measuring a total yield of a plurality of wafers;

determining a systematic yield and a random yield according to the total yield;

determining at least one systematic integral value according to the systematic yield by using a 3-sigma binomial analysis;

determining at least one systematic fault detection and classification value according to the at least one systematic integral value;

determining a random integral value according to the random yield by using the 3-sigma binomial analysis; and

determining a random fault detection and classification value according to the random integral value.

2 . The method of claim 1 wherein determining the at least one systematic fault detection and classification value according to the at least one systematic integral value is determining the at least one systematic fault detection and classification value according to the at least one systematic integral value by using a principal component analysis and a partial least square analysis.

3 . The method of claim 2 wherein determining the at least one systematic integral value according to the systematic yield is determining a systematic WAT (wafer acceptance test) integral value and a systematic DD (defect density) integral value according to the systematic yield.

4 . The method of claim 3 wherein determining the at least one systematic fault detection and classification value according to the at least one systematic integral value is determining a first systematic fault detection and classification value according to the systematic WAT integral value and determining a second systematic fault detection and classification value according to the systematic DD integral value.

5 . The method of claim 4 wherein determining the first systematic fault detection and classification value according to the systematic WAT integral value comprises:

determining a WAT coefficient according to the systematic WAT integral value;

determining a metrology coefficient according to the WAT coefficient; and

determining the first systematic fault detection and classification value according to the metrology coefficient;

wherein the systematic WAT integral value indicates an integral of the metrology coefficient and the WAT coefficient.

6 . The method of claim 4 wherein determining the second systematic fault detection and classification value according to the systematic DD integral value comprises:

determining a systematic critical area coefficient according to the systematic DD integral value;

determining a systematic DD coefficient according to the systematic critical area coefficient; and

determining the second systematic fault detection and classification value according to the systematic DD coefficient;

wherein the systematic DD integral value indicates an integral of the systematic critical area coefficient and the systematic DD coefficient.

7 . The method of claim 1 wherein determining the random fault detection and classification value according to the random integral value is determining the random fault detection and classification value according to the random integral value by using a principal component analysis and a partial least square analysis.

8 . The method of claim 7 wherein determining the random fault detection and classification value according to the random integral value comprises:

determining a random critical area coefficient according to the random integral value;

determining a random DD coefficient according to the random critical area coefficient; and

determining the random fault detection and classification value according to the random DD coefficient;

wherein the random integral value indicates an integral of the random critical area coefficient and the random DD coefficient.

9 . A hierarchical wafer lifetime predicting method comprising:

measuring a total lifetime of a wafer;

determining an intrinsic lifetime and an extrinsic lifetime according to the total lifetime;

determining at least one extrinsic integral value according to the extrinsic lifetime by using a 3-sigma binomial analysis;

determining at least one extrinsic fault detection and classification value according to the at least one extrinsic integral value;

determining an intrinsic integral value according to the intrinsic lifetime by using the 3-sigma binomial analysis; and

determining an intrinsic fault detection and classification value according to the intrinsic integral value.

10 . The method of claim 9 wherein determining the at least one extrinsic fault detection and classification value according to the at least one extrinsic integral value is determining the at least one extrinsic fault detection and classification value according to the at least one extrinsic integral value by using a principal component analysis and a partial least square analysis.

11 . The method of claim 10 wherein determining the at least one extrinsic integral value according to the extrinsic lifetime is determining a systematic DD integral value and a random DD integral value according to the extrinsic lifetime.

12 . The method of claim 11 wherein determining the at least one extrinsic fault detection and classification value according to the at least one extrinsic integral value is determining a first extrinsic fault detection and classification value according to the systematic DD integral value and determining a second extrinsic fault detection and classification value according to the random DD integral value.

13 . The method of claim 12 wherein determining the first extrinsic fault detection and classification value according to the systematic DD integral value comprises:

determining a systematic critical area coefficient according to the systematic DD integral value;

determining a systematic DD coefficient according to the systematic critical area coefficient; and

determining the first extrinsic fault detection and classification value according to the systematic DD coefficient;

wherein the systematic DD integral value indicates an integral of the systematic critical area coefficient and the systematic DD coefficient.

14 . The method of claim 12 wherein determining the second extrinsic fault detection and classification value according to the random DD integral value comprises:

determining a random critical area coefficient according to the random DD integral value;

determining a random DD coefficient according to the random critical area coefficient; and

determining the second extrinsic fault detection and classification value according to the random DD coefficient;

wherein the random DD integral value indicates an integral of the random critical area coefficient and the random DD coefficient.

15 . The method of claim 9 wherein determining the intrinsic fault detection and classification value according to the intrinsic integral value is determining the intrinsic fault detection and classification value according to the intrinsic integral value by using a principal component analysis and a partial least square analysis.

16 . The method of claim 15 wherein determining the intrinsic fault detection and classification value according to the intrinsic integral value comprises:

determining a WAT coefficient according to the intrinsic integral value;

determining a metrology coefficient according to the WAT coefficient; and

determining the intrinsic fault detection and classification value according to the metrology coefficient;

wherein the intrinsic integral value indicates an integral of the WAT coefficient and the metrology coefficient.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 5, 2011
From: HOU, HSIN-MING; KUNG, JI-FU
To: UNITED MICROELECTRONICS CORP.
Reel/Frame 026855/0766 →