Package for a light emitting element
A high-brightness LED module includes a substrate with a recess in which a light emitting element is mounted. The recess is defined by a sidewalls and a relatively thin membrane. At least two micro-vias are provided in the membrane and include conductive material that passes through the membrane. A p-contact of the light emitting element is coupled to a first micro-via and an n-contact of the light emitting element is coupled to a second micro-via.
1. A high-brightness LED module comprising: a silicon substrate comprising a recess defined by sidewalls and a membrane, wherein at least two micro-vias are disposed in the membrane, the micro-vias comprising conductive material that passes through the membrane; and a light emitting element mounted to the membrane, wherein a p-contact of the light emitting element is coupled to a first micro-via and an n-contact of the light emitting element is coupled to a second micro-via.
2. The module of claim 1 wherein a lid is attached to the substrate to define a region in which the light emitting element is housed, and wherein at least part of the lid is transparent to a wavelength of light that the light emitting element is arranged to emit.
3. The module of claim 1 including a reflective coating on sidewalls of the recess.
4. The module of claim 3 wherein the reflective coating substantially covers all surfaces of the sidewalls.
5. The module of claim 3 wherein the reflective coating comprises metal.
6. The module of claim 1 wherein an electrically conductive feed-through material extends from the recess through the membrane to an exterior of the package.
7. The module of claim 1 comprising an array of LEDs.
8. The module of claim 7 wherein the array of LEDs comprises a red light emitting LED, a green light emitting LED and a blue light emitting LED.
9. The module of claim 1 comprising a lens coupled to the silicon substrate and arranged so that light emitted by the LED passes through the lens.
10. The module of claim 9 wherein the lens comprises a color conversion material.
11. The module of claim 9 wherein the thermal expansion coefficient of the silicon substrate is substantially similar to the thermal expansion coefficient of the LED.
12. The module of claim 1 wherein the membrane is between about 40 and 80 microns thick.
13. The module of claim 12 wherein the maximum thickness of the silicon substrate is between about 200 and 410 microns thick.
14. The LED module of claim 1 wherein at least one edge of the silicon substrate proximate to a micro-via comprises a beveled surface.
15. The LED module of claim 14 wherein a micro-via is coupled to a metal pad disposed on a surface of the membrane opposite to which the LED is mounted, wherein at least a portion of the metal pad extends to the beveled surface.
16. The module of claim 12 wherein the maximum thickness of the silicon substrate is between about 400 and 700 microns thick.
17. A light emitting diode module comprising:
a substrate having a recess defined by sidewalls of the substrate and a membrane portion of the substrate, wherein the membrane portion has a first surface that defines the recess and a second surface opposite the first surface;
a light emitting element mounted within the recess to the first surface of the membrane portion, wherein the light emitting element has an n-contact and a p-contact;
a plurality of conductive vias disposed in and extending through the membrane portion from the first surface to the second surface, wherein a portion of the plurality of conductive vias is coupled to the p-contact of the light emitting element and another portion of the plurality of conductive vias is coupled to the n-contact of the light emitting element; and
a first under-bump metallization feature and a second under-bump metallization feature disposed at the second surface of the membrane portion, wherein the first under-bump metallization feature is coupled with the portion of the plurality of conductive vias and the second under-bump metallization feature is coupled with the another portion of the plurality of conductive vias.
18. The light emitting diode module of claim 17 wherein the portion of the plurality of conductive vias is electrically isolated from the another portion of the plurality of conductive vias.
19. The light emitting diode module of claim 17 wherein the first under-bump metallization feature is electrically isolated from the second under-bump metallization feature.
20. The light emitting diode module of claim 17 wherein the plurality of conductive vias are doped features in the membrane portion of the substrate.