Switching regulator with optimized switch node rise time
View Patent ↗A driver circuit for controlling a high-side power switch of a switching regulator includes: a logic circuit configured to generate a gate control signal for turning on the power switch; a diode having coupled to a first power supply voltage; a capacitor having a first electrode coupled to the cathode of the diode and a second electrode coupled to the switching output voltage; and a delay circuit configured to receive the gate control signal and to generate a delayed gate control signal. In operation, the capacitor is precharged to about the first power supply voltage. When the power switch is turned on, a first output drive transistor is turned on to distribute the charge stored on the capacitor to the gate terminal of the high-side power switch, and after the predetermined delay, a second output drive transistor is turned on to drive the output node to a high supply voltage.
1. A driver circuit for controlling a high-side power switch of a switching regulator, the high-side power switch being configured to drive a switching output voltage to an input supply voltage when the high-side power switch is turned on, the driver circuit comprising:
a logic circuit configured to receive a first signal having a first state to turn on the high-side power switch and a second state to turn off the high-side power switch, the logic circuit being configured to generate a first gate control signal;
a diode having an anode coupled to a first power supply voltage and a cathode;
a capacitor having a first electrode coupled to the cathode of the diode and a second electrode coupled to the switching output voltage;
a first output drive transistor having a gate terminal coupled to receive the first gate control signal, a source terminal coupled to the first electrode of the capacitor, and a drain terminal coupled to an output node of the driver circuit, the output node being coupled to drive the gate terminal of the high-side power switch;
a delay circuit configured to receive the gate control signal and to generate a delayed gate control signal being the gate control signal with a predetermined delay;
a second output drive transistor having a gate terminal coupled to receive the delayed gate control signal, a source terminal connected to a high supply voltage, and a drain terminal connected to the output node of the driver circuit, the high supply voltage being the sum of the input supply voltage and the first power supply voltage,
wherein the capacitor is charged to about the first power supply voltage when the first signal has the second state; and when the first signal has the first state, the first output drive transistor is turned on to distribute the charge stored on the capacitor to the output node for driving the gate terminal of the high-side power switch, and after the predetermined delay, the second output drive transistor is turned on to drive the output node to the high supply voltage.
2. The driver circuit of claim 1 , wherein the capacitor comprises a MOS capacitor.
3. The driver circuit of claim 2 , wherein the MOS capacitor is formed using a transistor having the same device structure as the high-side power switch with a transistor size being a portion of the size of the high-side power switch.
4. The driver circuit of claim 3 , wherein the MOS capacitor is formed using a transistor having a size being about 30% to 50% of the size of the high-side power switch.
5. The driver circuit of claim 1 , wherein the first output drive transistor and the second output drive transistor comprise PMOS transistors.
6. The driver circuit of claim 1 , wherein the delay circuit comprises one or more inverters.
7. The driver circuit of claim 1 , wherein the delay circuit provides the predetermined delay to the gate control signal to turn on the second output drive transistor when the switching output voltage has reached about 80% of the input supply voltage.
8. A method for driving a high-side power switch of a switching regulator, the high-side power switch being configured to drive a switching output voltage to an input supply voltage when the high-side power switch is turned on, the method comprising:
charging a capacitor to a first power supply voltage when the high-side power switch is turned off;
asserting a first signal to turn on the high-side power switch;
generating a gate control signal to turn on a first output drive transistor;
distributing charge stored on the capacitor through the first output drive transistor to an output node, the output node being coupled to drive the gate terminal of the high-side power switch; and
after a predetermined delay, turning on a second output drive transistor to drive the output node to a high supply voltage, the high supply voltage being the sum of the input supply voltage and the first power supply voltage.
9. The method of claim 8 , wherein the capacitor comprises a MOS capacitor.
10. The method of claim 9 , wherein the MOS capacitor is formed using a transistor having the same device structure as the high-side power switch with a transistor size being a portion of the size of the high-side power switch.
11. The method of claim 10 , wherein the MOS capacitor is formed using a transistor having a size being about 30% to 50% of the size of the high-side power switch.
12. The method of claim 8 , wherein the first output drive transistor and the second output drive transistor comprise PMOS transistors.
13. The method of claim 8 , wherein the predetermined delay comprises a delay time until the switching output voltage has reached about 80% of the input supply voltage.