IP Library › Granted Patent US 8,237,179
Granted Patent B2
US 8,237,179 · App. 13/241,351 · Granted Aug 7, 2012

Light emitting device

Assignee: Semiconductor Energy Laboratory Co., Ltd.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,237,179
App. No.
13/241,351
Granted
Aug 7, 2012
Kind
B2
Abstract

A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

Claims (51)

1. A light-emitting device comprising:

a switching transistor and a driving transistor, each including a semiconductor layer;

a source line electrically connected to the semiconductor layer of the switching transistor;

a gate line adjacent to the semiconductor layer of the switching transistor;

a wiring electrically connected to the semiconductor layer of the driving transistor;

an interlayer insulating film over the switching transistor and the driving transistor;

a pixel electrode over and in contact with the interlayer insulating film, wherein the pixel electrode is electrically connected to the semiconductor layer of the driving transistor;

a light emitting layer over the pixel electrode;

a counter electrode over the light emitting layer; and

a conductive film over and in contact with the interlayer insulating film, wherein the conductive film has a region overlapping the wiring.

2. The light-emitting device according to claim 1 , wherein the conductive film is a capacitance wiring.

3. The light-emitting device according to claim 1 , wherein the conductive film overlaps the semiconductor layer of the switching transistor.

4. The light-emitting device according to claim 1 , wherein the pixel electrode contains indium tin oxide.

5. The light-emitting device according to claim 1 , wherein the counter electrode contains MgAg.

6. The light-emitting device according to claim 1 , wherein the wiring is a power supply line.

7. The light-emitting device according to claim 6 , wherein an electric potential of the power supply line is kept constant.

8. The light-emitting device according to claim 1 , wherein the light-emitting device is incorporated in one selected from the group consisting of a display device, a camera, a computer, an image reproducing device, a goggle type display, and a cellular phone.

9. A light-emitting device comprising:

a switching transistor and a driving transistor, each including a semiconductor layer;

a source line electrically connected to the semiconductor layer of the switching transistor;

a gate line adjacent to the semiconductor layer of the switching transistor;

a wiring electrically connected to the semiconductor layer of the driving transistor;

an interlayer insulating film over the switching transistor and the driving transistor;

a pixel electrode over and in contact with the interlayer insulating film, wherein the pixel electrode is electrically connected to the semiconductor layer of the driving transistor;

a light emitting layer over the pixel electrode;

a counter electrode over the light emitting layer; and

a conductive film over and in contact with the interlayer insulating film, wherein the conductive film has a region extending in parallel with the gate line.

10. The light-emitting device according to claim 9 , wherein the conductive film is a capacitance wiring.

11. The light-emitting device according to claim 9 , wherein the conductive film overlaps the semiconductor layer of the switching transistor.

12. The light-emitting device according to claim 9 , wherein the pixel electrode contains indium tin oxide.

13. The light-emitting device according to claim 9 , wherein the counter electrode contains MgAg.

14. The light-emitting device according to claim 9 , wherein the wiring is a power supply line.

15. The light-emitting device according to claim 14 , wherein an electric potential of the power supply line is kept constant.

16. The light-emitting device according to claim 9 , wherein the light-emitting device is incorporated in one selected from the group consisting of a display device, a camera, a computer, an image reproducing device, a goggle type display, and a cellular phone.

17. A light-emitting device comprising:

a switching transistor and a driving transistor, each including a semiconductor layer;

a source line electrically connected to the semiconductor layer of the switching transistor;

a gate line adjacent to the semiconductor layer of the switching transistor;

a wiring electrically connected to the semiconductor layer of the driving transistor;

an interlayer insulating film over the switching transistor and the driving transistor;

a pixel electrode over and in contact with the interlayer insulating film, wherein the pixel electrode is electrically connected to the semiconductor layer of the driving transistor;

a light emitting layer over the pixel electrode;

a counter electrode over the light emitting layer; and

a conductive film over and in contact with the interlayer insulating film, wherein the conductive film has a region overlapping the wiring and extending in parallel with the gate line.

18. The light-emitting device according to claim 17 , wherein the conductive film is a capacitance wiring.

19. The light-emitting device according to claim 17 , wherein the conductive film overlaps the semiconductor layer of the switching transistor.

20. The light-emitting device according to claim 17 , wherein the pixel electrode contains indium tin oxide.

21. The light-emitting device according to claim 17 , wherein the counter electrode contains MgAg.

22. The light-emitting device according to claim 17 , wherein the wiring is a power supply line.

23. The light-emitting device according to claim 22 , wherein an electric potential of the power supply line is kept constant.

24. The light-emitting device according to claim 17 , wherein the light-emitting device is incorporated in one selected from the group consisting of a display device, a camera, a computer, an image reproducing device, a goggle type display, and a cellular phone.

Priority Claims (1)
JP 2001-008379 · Jan 17, 2001 · national
Continuity (5)
Continuation 12879032 · Sep 10, 2010
Continuation 11773172 · Jul 3, 2007
Continuation 10986931 · Nov 15, 2004
Continuation 10050597 · Jan 15, 2002
Related Publication 20120012888A1 · Jan 19, 2012