Programmable impedance elements and devices that include such elements
View Patent ↗Programmable impedance elements structures, devices and methods are disclosed. Methods can include: forming a first electrode layer within an electrode opening that extends through a cap layer; planarizing to expose a top of the cap layer; cleaning the exposed top surface of the cap layer to remove residual species from previous process steps. Additional methods can include forming at least a base ion conductor layer having an active metal formed therein that may ion conduct within the ion conductor layer; and forming an inhibitor material that mitigates agglomeration of the active metal within the base ion conductor layer as compared to the active metal alone. Programmable impedance elements and/or devices can have switching material and electrodes parallel to both bottoms and sides of a cell opening formed in a cell dielectric. Other embodiments can include an ion conductor layer having an alloy of an active metal, or two ion conductor layers in contact with an active electrode.
1. A programmable impedance element, comprising:
a first electrode that extends through at least a first dielectric layer;
a switching material and a second electrode formed within a cell opening of a cell insulating layer formed over the first dielectric layer, first portions of the switching material and second electrode being formed parallel to a bottom of the cell opening, and second portions of the switching material and second electrode being formed parallel to a side surface of the cell opening; and
an insulating fill layer formed within the cell opening over at least a portion of the switching material and the second electrode, the insulating fill layer has a top surface substantially coplanar with a top surface of the cell insulating layer.
2. The programmable impedance element of claim 1 , wherein:
the switching material is selected from the group of: a chalcogenide and a transition metal oxide.
3. The programmable impedance element of claim 1 , wherein:
the second portion of the switching material is substantially perpendicular to the top surface of the first dielectric layer.
4. The programmable impedance element of claim 1 , wherein:
the second portion of the second electrode is substantially perpendicular to the top surface of the first dielectric layer.
5. The programmable impedance element of claim 1 , further including:
a conductive fill layer formed within the cell opening over at least a portion of the switching material and the second electrode.
6. The programmable impedance element of claim 5 , wherein:
the conductive fill layer has a top surface substantially coplanar with a top surface of the cell insulating layer.
7. A programmable impedance element, comprising:
a first electrode that extends through at least a first dielectric layer;
a switching material and a second electrode formed within a cell opening of a cell insulating layer formed over the first dielectric layer, first portions of the switching material and second electrode being formed parallel to a bottom of the cell opening, and second portions of the switching material and second electrode being formed parallel to a side surface of the cell opening; wherein
the cell opening is a trench extending in a first direction parallel to first dielectric layer, the trench extending further in the first direction than a second direction perpendicular to the first direction; and
a plurality of first electrodes having top surfaces in a bottom of the trench.
8. The programmable impedance element of claim 7 , wherein:
the switch layer is patterned to form a plurality of switch layer sections within the trench.
9. The programmable impedance element of claim 7 , wherein:
the second electrode is patterned to form a plurality of second electrode sections within the trench.
10. The programmable impedance element of claim 9 , further including:
a second electrode fill material formed in the trench over the second electrode sections.
11. A programmable impedance element, comprising:
a first electrode that extends through at least a first dielectric layer;
a switching material and a second electrode formed within a cell opening of a cell insulating layer formed over the first dielectric layer, first portions of the switching material and second electrode being formed parallel to a bottom of the cell opening, and second portions of the switching material and second electrode being formed parallel to a side surface of the cell opening;
an insulating fill layer formed within the cell opening over at least a portion of the switching material and the second electrode; and
a conductive fill layer formed within the cell opening over at least a portion of the switching material and the second electrode.
12. The programmable impedance element of claim 11 , wherein:
the switching material is selected from the group of: a chalcogenide and a transition metal oxide.
13. The programmable impedance element of claim 11 , wherein:
the second portion of the switching material is substantially perpendicular to the top surface of the first dielectric layer.
14. The programmable impedance element of claim 11 , wherein:
the second portion of the second electrode is substantially perpendicular to the top surface of the first dielectric layer.
15. The programmable impedance element of claim 11 , wherein:
the insulating fill layer has a top surface substantially coplanar with a top surface of the cell insulating layer.
16. The programmable impedance element of claim 11 , wherein:
the conductive fill layer has a top surface substantially coplanar with a top surface of the cell insulating layer.