Substrate processing apparatus and method of manufacturing a semiconductor device
A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the microwave supplied when the substrate is processed.
1. A substrate processing apparatus comprising:
a processing chamber configured to process a substrate having a front surface including a dielectric;
a substrate support member provided within the processing chamber to support the substrate;
a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member;
a conductive substrate cooling unit which is provided below a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate; and
a control unit configured to control the substrate support member such that a distance between a top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the microwave supplied when the substrate is processed, wherein the control unit is further configured to control, after processing the substrate, the substrate support member such that the distance between the top of the substrate support member and the opposing surface of the substrate cooling unit is shorter than the distance during processing the substrate.
2. The substrate processing apparatus of claim 1 , wherein the substrate is made of a plurality of films having different permittivities.
3. The substrate processing apparatus of claim 1 , wherein the substrate support member is made of material having a heat transfer property lower than that of the substrate cooling unit.
4. The substrate processing apparatus of claim 1 , wherein the substrate support member comprises substrate support pins for supporting the substrate on the top of the substrate support members.
5. The substrate processing apparatus of claim 1 , wherein the conductive substrate cooling unit is provided in a bottom wall of the processing chamber.
6. The substrate processing apparatus of claim 1 , further comprising a wall cooling unit configured to cool at least one of a side wall and a top wall of the processing chamber.
7. The substrate processing apparatus of claim 1 , further comprising:
a gas supply unit configured to supply gas into the processing chamber; and
a gas exhaust unit configured to exhaust gas out of the processing chamber,
wherein the control unit is further configured to control the gas supply unit and the gas exhaust unit such that the internal pressure of the processing chamber is kept higher than 200 Torr.
8. The substrate processing apparatus of claim 1 , further comprising a coolant flow rate controller for controlling a flow rate of a coolant flowing into the conductive substrate cooling unit, wherein the coolant flow rate controller is connected to the substrate cooling unit.
9. The substrate processing apparatus of claim 8 , further comprising a temperature detector for detecting the temperature of the substrate supported on the substrate support member, wherein the coolant flow rate controller is controlled based on temperature data detected by the temperature detector.
10. The substrate processing apparatus of claim 1 , further comprising a wall cooling unit configured to cool a wall of the processing chamber.
11. A method of manufacturing a semiconductor device using a substrate processing apparatus including a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member, and a conductive substrate cooling unit which is provided below a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate, the method comprising:
loading the substrate having a front surface including a dielectric into the processing chamber and supporting the substrate on the substrate support member;
controlling the substrate support member such that a distance between a top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the supplied microwave;
supplying the microwave to the front surface side of the substrate supported on the substrate support member;
cooling the substrate from the rear surface side of the substrate supported on the substrate support member while the microwave is being supplied;
after supplying the microwave, stopping supplying the microwave and controlling the substrate support member such that the distance between the top of the substrate support member and the opposing surface of the substrate cooling unit is shorter than the distance during supplying the microwave to cool the substrate; and
unloading the substrate out of the processing chamber.
12. A method of manufacturing a semiconductor device using a substrate processing apparatus including a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member, and a conductive substrate cooling unit which is provided below a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate, the method comprising:
loading the substrate having a front surface including a dielectric into the processing chamber and supporting the substrate on the substrate support member;
setting a distance between the top of the substrate support member and the opposing surface of the substrate cooling unit to correspond to an odd multiple of ¼ wavelength of the supplied microwave;
supplying the microwave to the front surface side of the substrate supported on the substrate support member under the state where the distance between the top of the substrate support member and the opposing surface of the substrate cooling unit is set to correspond to an odd multiple of ¼ wavelength of the supplied microwave;
cooling the substrate from the rear surface side of the substrate supported on the substrate support member while the microwave is being supplied;
after supplying the microwave, stopping supplying the microwave and controlling the substrate support member such that the distance between the top of the substrate support member and the opposing surface of the substrate cooling unit is shorter than the distance during supplying the microwave to cool the substrate; and
unloading the substrate out of the processing chamber.