Environment-resistant module, micropackage and methods of manufacturing same
An environment-resistant module which provides both thermal and vibration isolation for a packaged micromachined or MEMS device is disclosed. A microplatform and a support structure for the microplatform provide the thermal and vibration isolation. The package is both hermetic and vacuum compatible and provides vertical feedthroughs for signal transfer. A micromachined or MEMS device transfer method is also disclosed that can handle a wide variety of individual micromachined or MEMS dies or wafers, in either a hybrid or integrated fashion. The module simultaneously provides both thermal and vibration isolation for the MEMS device using the microplatform and the support structure which may be fabricated from a thin glass wafer that is patterned to create crab-leg shaped suspension tethers or beams.
1. A micropackage comprising:
a semiconductor wafer having at least one isolated portion, each isolated portion being electrically isolated from the rest of the wafer by air gaps or trenches;
a thin support layer or film of insulating material formed on the wafer for supporting the isolated portion, the support layer being substantially planar in a lateral direction and being at least partially defined by a single wafer, the support layer or film having at least one hole extending completely therethrough, wherein each hole is generally aligned with at least a portion of one of the respective isolated portions; and
electrically conductive material formed in each hole and electrically connected to each isolated portion of the wafer, wherein each isolated portion is supported by a supporting portion of the thin layer or film, the conductive material and the isolated portion of the wafer forming a substantially vertical feedthrough extending through the wafer for signal transfer through the wafer and the thin layer or film and through the micropackage.
2. The micropackage as claimed in claim 1 , wherein the wafer at least partially forms a substrate of the micropackage.
3. The micropackage as claimed in claim 1 , wherein the wafer at least partially forms a capsule of the micropackage.
4. The micropackage as claimed in claim 1 , further comprising a second wafer, the second wafer being bonded to the semiconductor wafer and supporting each supporting portion of the thin layer or film.
5. The micropackage as claimed in claim 1 , wherein the wafer is a cap wafer and the vertical feedthroughs are top vertical feedthroughs.
6. The micropackage as claimed in claim 1 , wherein the wafer is a substrate wafer and the vertical feedthroughs are bottom vertical feedthroughs.
7. The micropackage as claimed in claim 4 , wherein the layer or film of insulating material bonds the second wafer to the semiconductor wafer.
8. The micropackage of claim 1 , wherein the support layer or film has a thickness of at least 100 micrometers.
9. A micropackage comprising:
a semiconductor wafer having an upper surface, a lower surface, and at least one isolated portion, each isolated portion being electrically isolated from the rest of the wafer by air gaps or trenches extending from the upper surface to the lower surface without material disposed within the air gaps or trenches;
a thin layer or film of insulating material formed on the upper surface of the wafer, the layer or film having at least one hole extending completely therethrough, wherein each hole is generally aligned with at least a portion of one of the respective isolated portions; and
electrically conductive material formed in each hole and electrically connected to each isolated portion of the wafer, wherein each isolated portion is supported by a supporting portion of the thin layer or film, the conductive material and the isolated portion of the wafer forming a substantially vertical feedthrough extending through the wafer for signal transfer through the wafer and the thin layer or film and through the micropackage.
10. The micropackage of claim 9 , wherein the air gaps or trenches are defined between a first and second walls without material being disposed between the first and second walls.
11. The micropackage of claim 9 , wherein the thin layer or film has a thickness of at least 100 micrometers.