Using vacuum ultra-violet (VUV) data in radio frequency (RF) sources

1. A method for processing a substrate using a Vacuum Ultra-Violet and Electron Energy Distribution Function (VUV and EEDƒ) etch system, the method comprising:

positioning a substrate on a substrate holder in a process chamber configured to perform the VUV and EEDƒ-related procedure;

creating an initial VUV and EEDf-related pre-processing plasma in a processing region during a first pre-processing time associated with the VUV and EEDƒ-related procedure using a Radio Frequency (RF) generator;

determining a first measured VUV radiation value for the initial VUV and EEDƒ-related pre-processing plasma;

comparing the first measured VUV radiation value to first VUV radiation limits during the first pre-processing time;

performing at least one first corrective action to improve the first measured VUV radiation value when the first measured VUV radiation value exceeds one or more of the first VUV radiation limits during the first pre-processing time; and

creating one or more first VUV and EEDƒ-related plasmas in the process chamber during a second pre-processing time associated with the VUV and EEDf-related procedure using the RF generator.

2. The method of claim 1 , further comprising:

determining a second measured VUV radiation value for at least one of the first VUV and EEDf-related plasmas during the second pre-processing time;

comparing the second measured VUV radiation value to second VUV radiation limits during the second pre-processing time;

performing at least one second corrective action to improve the second measured VUV radiation value when the second measured VUV radiation value exceeds one or more of the second VUV radiation limits during the second pre-processing time; and

creating one or more new VUV and EEDf-related plasmas in the process chamber during a new processing time associated with the VUV and EEDf-related procedure using the RF generator.

3. The method of claim 2 , further comprising:

determining a new measured VUV radiation value for at least one of the new VUV and EEDf-related plasmas during the new processing time;

comparing the new measured VUV radiation value to new VUV radiation limits during the new processing time;

performing at least one new corrective action to improve the new measured VUV radiation value when the new measured VUV radiation value exceeds one or more of the new VUV radiation limits during the new processing time; and

processing the substrate using one or more of the new VUV and EEDf-related plasmas created in the process chamber during the new processing time associated with the VUV and EEDf-related procedure.

4. The method of claim 2 , wherein the new VUV and EEDf-related plasmas comprise a new stabilization plasma, or a new process plasma, or any combination thereof.

5. The method of claim 1 , wherein the (VUV and EEDƒ)) etch system comprises a capacitively-coupled (CCP) etch system, an inductively coupled plasma (ICP) etch system, or a transformer coupled plasma (TCP) etch system, or any combination thereof.

6. The method of claim 1 , wherein one or more initial gas mixtures are flowed into a top portion of the process chamber during the first pre-processing time associated with the VUV and EEDf-related procedure.

7. The method of claim 1 , wherein the (VUV and EEDƒ)) etch system comprises at least one RF generator coupled to the process chamber, the at least one RF generator being configured to provide an initial pre-processing power to a plasma generation gas during the first pre-processing time, thereby creating the initial VUV and EEDf-related pre-processing plasma in the processing region proximate to the substrate during the first pre-processing time.

8. The method of claim 1 , wherein one or more VUV and EEDf sensor subsystems are coupled to the process chamber and are used to determine the first measured VUV radiation value during the first pre-processing time.

9. The method of claim 1 , wherein performing at least one first corrective action comprises updating at least one of: an RF power, an RF voltage, an RF bias, a DC electrical power, an initial gas mixture component, an initial gas mixture flow rate, an initial gas mixture direction, a number of initial pre-processing gases, an initial pre-processing gas flow rates, an initial pre-processing gas flow direction, chamber pressure, chamber temperature, an initial pre-processing power, and a substrate temperature.

10. The method of claim 1 , wherein a high voltage direct current (DC) electrical power is coupled to the (VUV and EEDƒ)-related etch system thereby creating an energetic (ballistic) electron beam that strikes the substrate during the first pre-processing time.

11. A method for processing a substrate using a Vacuum Ultra-Violet and Electron Energy Distribution Function (VUV and EEDƒ) etch system, the method comprising:

positioning a substrate on a substrate holder in a process chamber configured to perform the VUV and EEDƒ-related procedure;

creating an initial VUV and EEDf-related pre-processing plasma in a processing region during a first pre-processing time associated with the VUV and EEDƒ-related procedure using a Radio Frequency (RF) generator;

determining a first measured VUV radiation value for the initial VUV and EEDf-related pre-processing plasma;

comparing the first measured VUV radiation value to first VUV radiation limits during the first pre-processing time;

performing at least one first corrective action to improve the first measured VUV radiation value when the first measured VUV radiation value exceeds one or more of the first VUV radiation limits during the first pre-processing time; and

creating one or more new VUV and EEDƒ-related plasmas in the process chamber during a new processing time associated with the VUV and EEDf-related procedure using the RF generator.

12. The method of claim 11 , further comprising:

determining a new measured VUV radiation value for at least one of the new VUV and EEDf-related plasmas during the new processing time;

comparing the new measured VUV radiation value to new VUV radiation limits during the new processing time;

performing at least one new corrective action to improve the new measured VUV radiation value when the new measured VUV radiation value exceeds one or more of the new VUV radiation limits during the new processing time; and

processing the substrate using one or more of the new VUV and EEDf-related plasmas created in the process chamber using the RF generator during the new processing time associated with the VUV and EEDf-related procedure.

13. The method of claim 11 , wherein the new VUV and EEDf-related plasmas comprise a new stabilization plasma, or a new process plasma, or any combination thereof.

14. The method of claim 11 , wherein the (VUV and EEDƒ)) etch system comprises a capacitively-coupled (CCP) etch system, an inductively coupled plasma (ICP) etch system, or a transformer coupled plasma (TCP) etch system, or any combination thereof.

15. The method of claim 11 , wherein one or more initial gas mixtures are flowed into a top portion of the process chamber during the first pre-processing time associated with the VUV and EEDf-related procedure.

16. The method of claim 11 , wherein the (VUV and EEDƒ)) etch system comprises at least one RF generator coupled to the process chamber, the at least one RF generator being configured to provide an initial pre-processing power to a plasma generation gas during the first pre-processing time, thereby creating the initial VUV and EEDf-related pre-processing plasma in the processing region proximate to the substrate during the first pre-processing time.

17. The method of claim 11 , wherein one or more of VUV and EEDf sensor subsystems are coupled to the process chamber and are used to determine the first measured VUV radiation value during the first pre-processing time.

18. The method of claim 11 , wherein performing at least one first corrective action comprises updating at least one of: an RF power, an RF voltage, an RF bias, a DC electrical power, an initial gas mixture component, an initial gas mixture flow rate, an initial gas mixture direction, a number of initial pre-processing gases, an initial pre-processing gas flow rates, an initial pre-processing gas flow direction, chamber pressure, chamber temperature, an initial pre-processing power, and a substrate temperature.

19. The method of claim 11 , wherein a high voltage direct current (DC) electrical power is coupled to the (VUV and EEDƒ) etch system, thereby creating an energetic (ballistic) electron beam that strikes the substrate during the first pre-processing time.