IP Library Granted Patent US 9,229,096
Granted Patent B2
US 9,229,096 · App. 13/278,019 · Granted Jan 5, 2016

Time-of-flight imaging systems

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Quick Facts
Patent No.
US 9,229,096
App. No.
13/278,019
Granted
Jan 5, 2016
Kind
B2
Abstract

Electronic devices may include time-of-flight image pixels. A time-of-flight image pixel may include first and second charge storage regions coupled to a photosensor and a transfer transistor with a gate terminal coupled to the first storage region. An electronic device may further include a light pulse emitter configured to emit pulses of light to be reflected by objects in a scene. Reflected portions of the emitted pulses of light may be captured along with background light by the time-of-flight image pixels. Time-of-flight image pixels may be configured sense the time-of-flight of the reflected portions of the emitted pulses. The electronic device may include processing circuitry configured to use the sensed time-of-flight of the reflected portions to generate depth images of a scene. Depth images may include depth-image pixel values that contain information corresponding to the distance of the objects in the scene from the electronic device.

Claims (43)

1. A time-of-flight image pixel comprising:

a photosensitive element;

first and second charge storage regions coupled to the photosensitive element;

a first transfer transistor coupled between the photosensitive element and the first charge storage region; and

a second transfer transistor coupled between the photosensitive element and the second charge storage region, wherein the second transfer transistor includes a gate terminal that is coupled to the first charge storage region.

2. The time-of-flight image pixel defined in claim 1 , further comprising:

a third transfer transistor having a first source-drain terminal and a second source-drain terminal, wherein the first source-drain terminal of the third transfer transistor is connected to the gate terminal and wherein the second source-drain terminal of the third transfer transistor is connected to the first charge storage region.

3. The time-of-flight image pixel defined in claim 2 , further comprising:

a fourth transfer transistor having a first source-drain terminal that is coupled to the gate terminal.

4. The time-of-flight image pixel defined in claim 2 , further comprising:

a reset transistor having a first source-drain terminal and a second source-drain terminal, wherein the first of the reset transistor is coupled to the second charge storage region; and

a source follower transistor having a gate terminal connected to the second charge storage region and a source-drain terminal that is coupled to the second source-drain terminal of the reset transistor.

5. The time-of-flight image pixel defined in claim 4 , further comprising:

an additional reset transistor having a source-drain terminal that is coupled to the photosensitive element.

6. The time-of-flight image pixel defined in claim 2 , further comprising:

a reset transistor having a first source-drain terminal that is coupled to the second charge storage region;

a source follower transistor having a gate terminal connected to the second charge storage region; and

a row select transistor coupled to the source follower transistor.

7. The time-of-flight image pixel defined in claim 1 , further comprising:

control circuitry configured to control the first transfer transistor to couple the first charge storage region to the photosensitive element during a background light capture period.

8. The time-of-flight image pixel defined in claim 7 , further comprising:

control circuitry configured to control the second transfer transistor to couple the second charge storage region to the photosensitive element during a non-visible light capture period.

9. An electronic device, comprising:

control circuitry;

a light pulse emission component configured to emit pulses of non-visible light; and

an array of time-of-flight image pixels, wherein each time-of-flight image pixel comprises:

a photodiode;

a first charge storage region;

a first transfer transistor that is coupled between the photodiode and the first charge storage region, wherein the control circuitry is configured to control the first transfer transistor to transfer charges from the photodiode to the first charge storage region after a background light collecting period of the electronic device;

a second charge storage region;

a second transfer transistor that is coupled between the photodiode and the second charge storage region; and

a switch configured to selectively connect a gate terminal of the second transfer transistor to the first charge storage region;

wherein the control circuitry is configured to control the switch to connect the gate terminal of the second transfer transistor to the first charge storage region after a non-visible light collecting period of the electronic device; and

wherein the second transfer transistor is configured to transfer an amount of charge from the photodiode to the second charge storage region based on the amount of charge in the first charge storage region when the switch connects the gate terminal of the second transfer transistor to the first charge storage region.

10. The electronic device defined in claim 9 , further comprising:

readout circuitry having at least one source follower transistor, wherein the at least one source follower transistor is configured to convert the charges stored on the second charge storage region of a selected one of the time-of-flight image pixels into a depth-image signal and wherein the readout circuitry is configured to read out the depth-image signal.

11. The electronic device defined in claim 10 , further comprising:

processing circuitry configured to extract depth information from the depth-image signal.

12. The electronic device defined in claim 9 , further comprising:

an array of lenses; and

an array of image sensors, wherein at least one of the image sensors includes the array of time-of-flight image pixels and wherein each lens is configured to focus image light onto a corresponding one of the image sensors.

13. The electronic device defined in claim 12 , further comprising:

processing circuitry, wherein the array of image sensors includes a red image sensor, a blue image sensor, and a green image sensor, wherein the processing circuitry is configured to combine image data from the red image sensor, the blue image sensor, and the green image sensor to form a color image, and wherein the processing circuitry is configured to process depth-image data from the at least one of the image sensors that includes the array of time-of flight image pixels.

Assignments (5)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 18, 2014
From: APTINA IMAGING CORPORATION
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 034673/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2011
From: KIM, DONGSOO; LIM, JAE EUN; CHO, KWANGBO
To: APTINA IMAGING CORPORATION
Reel/Frame 027095/0628 →