Method of Manufacturing a Semiconductor Device Including Removing a Reformed Layer
In a manufacturing method of a semiconductor device, a substrate including single crystalline silicon is prepared, a reformed layer that continuously extends is formed in the substrate, and the reformed layer is removed by etching. The forming the reformed layer includes polycrystallizing a portion of the single crystalline silicon by irradiating the substrate with a pulsed laser beam while moving a focal point of the laser beam in the substrate.
1. A manufacturing method of a semiconductor device comprising:
preparing a substrate including single crystalline silicon;
forming a reformed layer that continuously extends in the substrate, the forming the reformed layer including polycrystallizing a portion of the single crystalline silicon by irradiating the substrate with a pulsed laser beam while moving a focal point of the laser beam in the substrate; and
removing the reformed layer by wet etching,
wherein the semiconductor device includes a sensor having a diaphragm,
wherein the forming the reformed layer and the removing the reformed layer are applied to forming the diaphragm in the substrate,
wherein the forming the reformed layer includes forming the reformed layer along an interface between the diaphragm and a removal region under the diaphragm, and
wherein the removing the reformed layer includes hollowing out the removal region by removing the reformed layer by wet etching, the diaphragm thereby being exposed to the outside.
2. The manufacturing method according to claim 1 ,
wherein the pulsed laser beam has a wavelength within a range from 1000 nm to 1100 nm.
3. The manufacturing method according to claim 1 ,
wherein the pulsed laser beam has an average pulse energy of more than 2.5 μJ.
4. The manufacturing method according to claim 3 ,
wherein the pulsed laser beam has the average pulse energy of 15 μJ or less.
5. The manufacturing method according to claim 4 ,
wherein the pulsed laser beam has the average pulse energy within a range from 6.25 μJ to 12.5 μJ.
6. The manufacturing method according to claim 1 ,
wherein the forming the reformed layer includes moving the focal point of the laser beam in a direction parallel to a planar direction of the substrate at a planar pitch of 5 μm or less.
7. The manufacturing method according to claim 6 ,
wherein the planar pitch is within a range from 2 μm to 4 μm.
8. The manufacturing method according to claim 1 ,
wherein the forming the reformed layer includes moving the focal point of the laser beam in a direction vertical to a planar direction of the substrate at a vertical pitch of 5 μm or less.
9. The manufacturing method according to claim 8 ,
wherein the vertical pitch is within a range from 10 μm to 25 μm.
10. The manufacturing method according to claim 1 ,
wherein the reformed layer is removed by wet etching.
11. The manufacturing method according to claim 10 ,
wherein the diaphragm has a width of 600 μm or less in a planar direction of the substrate.
12. The manufacturing method according to claim 11 ,
wherein the diaphragm has the width of 350 μm or less.
13. The manufacturing method according to claim 1 ,
wherein the reformed layer is formed at a predetermined distance from the diaphragm to be formed along a direction parallel to a planar direction of the substrate, and
wherein the predetermined distance is within a range from 10 μm to 30 μm.
14. The manufacturing method according to claim 1 ,
wherein the substrate is a single crystalline silicon substrate.
15. The manufacturing method according to claim 1 ,
wherein the substrate is a silicon-on-insulator substrate in which a silicon oxide layer is buried in single crystalline silicon.