Detection of contamination in EUV systems
View Patent ↗A sensor for sensing contamination in an application system is disclosed. In one aspect, the sensor comprises a capping layer. The sensor is adapted to cause a first reflectivity change upon initial formation of a first contamination layer on the capping layer when the sensor is provided in the system. The first reflectivity change is larger than an average reflectivity change upon formation of a thicker contamination layer on the capping layer and larger than an average reflectivity change upon formation of an equal contamination on the actual mirrors of the optics of the system.
1. A sensor for sensing contamination in an application system, the sensor comprising:
a substrate with a reflective multi-layer coating; and
a capping layer,
wherein one or more of the thickness, material, composition or refractive index of the capping layer is adapted to cause a first reflectivity change upon initial formation of a first contamination layer of a first thickness on the capping layer when the sensor is provided in the application system, the first reflectivity change being larger than an average reflectivity change upon further formation of a contamination layer having a thickness greater than the first thickness on the capping layer, and wherein a reflectivity of the sensor as a function of a thickness of a contamination layer on the capping layer is a superposition of a decreasing reflectivity function and an oscillating reflectivity function, the capping layer being adapted so that the reflectivity change of the sensor upon initial formation of the first contamination layer on the capping layer when the sensor is provided in the application system corresponds to a falling edge of the oscillating reflectivity function.
2. The sensor according to claim 1 , wherein the reflectivity change upon initial contamination of the capping layer is at least about 0.5% reflectivity reduction per nanometer contamination layer thickness.
3. The sensor according to claim 1 , wherein the capping layer comprises a substantially non-oxidizing material.
4. The sensor according to claim 1 , wherein the capping layer comprises at least one of the following: silicon, ruthenium, titanium dioxide, rhodium, palladium, iridium, platinum, gold, silicon carbide, carbon, boron nitride, silicon nitride, and titanium nitride.
5. The sensor according to claim 1 , wherein the capping layer is a top layer of the reflective multi-layer coating.
6. The sensor according to claim 1 , the sensor further comprising a sub-layer between the capping layer and the reflective substrate.
7. A detection system for detecting contamination in an application system, the detection system comprising:
a sensor adapted for receiving an irradiation beam from an irradiation source and adapted for reflecting a modified irradiation beam to a radiation detector, the sensor comprising
a substrate with a reflective multi-layer coating, and
a capping layer, wherein one or more of the thickness, material, composition or refractive index of the capping layer is adapted to cause a first reflectivity change upon initial formation of a first contamination layer of a first thickness on the capping layer when the sensor is provided in the application system, the first reflectivity change being larger than an average reflectivity change upon further formation of a contamination layer having a thickness greater than the first thickness on the capping layer, wherein a reflectivity of the sensor as a function of a thickness of a contamination layer on the capping layer is a superposition of a decreasing reflectivity function and an oscillating reflectivity function, the capping layer being adapted so that the reflectivity change of the sensor upon initial formation of the first contamination layer on the capping layer when the sensor is provided in the application system corresponds to a falling edge of the oscillating reflectivity function; and
a processing system for deriving a contamination level as a function of a detected reflectivity of the sensor.
8. The detection system according to claim 7 , wherein the processing system for deriving a contamination level is adapted for taking into account a correlation between the change in reflectivity and the thickness of the contamination layer formed on the sensor.
9. The detection system according to claim 7 , wherein the processing system is adapted for taking into account a calibration measurement providing information regarding the initial reflectivity of the reflective substrate.
10. The detection system according to claim 7 , the detection system further comprising a feedback providing system for providing feedback regarding the contamination to the application system.
11. The detection system according to claim 7 , the detection system further comprising a contamination removal system for removing the contamination from the capping layer.
12. The detection system according to claim 7 , wherein the capping layer is a top layer of the reflective multi-layer coating.
13. An extreme ultraviolet lithographic system comprising:
a plurality of mirrors, at least one of the mirrors comprising a reflective substrate and a capping layer provided on the reflective substrate, wherein the capping layer of the at least one mirror is adapted so as to cause a mirror reflectivity change upon initial formation of a first contamination layer on the capping layer of the at least one mirror; and
a sensor comprising a substrate with a reflective multi-layer coating and a second capping layer, wherein one or more of the thickness, material, composition or refractive index of the second capping layer is adapted to cause a first reflectivity change upon initial formation of a first contamination layer of a first thickness on the second capping layer, the first reflectivity change being larger than an average reflectivity change upon further formation of a contamination layer having a thickness greater than the first thickness on the second capping layer, wherein a reflectivity of the sensor as a function of a thickness of a contamination layer on the second capping layer is a superposition of a decreasing reflectivity function and an oscillating reflectivity function, the second capping layer being adapted so that the reflectivity change of the sensor upon initial formation of the first contamination layer on the second capping layer when the sensor is provided in the system corresponds to a falling edge of the oscillating reflectivity function, and wherein the mirror reflectivity change is substantially smaller than the first reflectivity change for the sensor.
14. An application system according to claim 13 , further comprising:
a processing system for deriving a contamination level as a function of a detected reflectivity of the sensor; and
a feedback providing system for providing feedback regarding the contamination to the lithographic system and controlling an irradiation source of the lithographic system.
15. The system according to claim 13 , wherein the second capping layer is a top layer of the reflective multi-layer coating.
16. A method of sensing contamination in an application system, the method comprising:
providing a sensor comprising a capping layer, and
sensing a first reflectivity change of the sensor upon initial formation of a first contamination layer of a first thickness on the capping layer when the sensor is provided in an application system, the first reflectivity change being larger than an average reflectivity change upon further formation of a contamination layer having a thickness greater than the first thickness on the capping layer, wherein a reflectivity of the sensor as a function of a thickness of a contamination layer on the capping layer is a superposition of a decreasing reflectivity function and an oscillating reflectivity function, the capping layer being adapted so that the reflectivity change of the sensor upon initial formation of the first contamination layer on the capping layer when the sensor is provided in the application system corresponds to a falling edge of the oscillating reflectivity function.
17. The method according to claim 16 , the method further comprising determining a contamination quantity based on the sensed first reflectivity change.
18. The method according to claim 17 , the method further comprising controlling the application system based on the determined contamination quantity.
19. A method of manufacturing a sensor for sensing contamination in an application system, the method comprising
obtaining a substrate; and
providing a capping layer on the substrate thus forming a sensor, the sensor being adapted to cause a first reflectivity change upon initial formation of a first contamination layer having a first thickness on the capping layer when the sensor is provided in the system, the first reflectivity change being larger than an average reflectivity change upon further formation of a contamination layer having a thickness greater than the first thickness on the capping layer, and wherein a reflectivity of the sensor as a function of a thickness of a contamination layer on the capping layer is a superposition of a decreasing reflectivity function and an oscillating reflectivity function, the capping layer being adapted so that the reflectivity change of the sensor upon initial formation of the first contamination layer on the capping layer when the sensor is provided in the application system corresponds to a falling edge of the oscillating reflectivity function.