IP Library Granted Patent US 9,093,579
Granted Patent B2
US 9,093,579 · App. 13/294,951 · Granted Jul 28, 2015

Dielectric barriers for pixel arrays

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Quick Facts
Patent No.
US 9,093,579
App. No.
13/294,951
Granted
Jul 28, 2015
Kind
B2
Abstract

Pixel arrays are provided for image sensors that have barriers between color filters in an array of color filters. Color filter barriers may be formed from a transparent or semi-transparent material. Color filter barriers may be formed from a low refractive index material. Color filters may be etched and color filter barrier material may be formed in the etched regions of the color filters. If desired, a layer of color filter barrier material may be etched to form open regions and color filter material may be formed in the open regions of the color filter barrier material. An image sensor may be a front-side illuminated image sensor or a back-side illuminated image sensor.

Claims (12)

1. An array of pixels, comprising:

a substrate having an array of photodiodes;

an array of color filters over the array of photodiodes; and

vertical dielectric walls between the color filters, wherein the dielectric walls do not extend over the color filters and wherein the vertical dielectric walls each have a monotonically increasing refractive index gradient along a vertical direction.

2. The array of pixels defined in claim 1 , wherein the vertical dielectric walls each have widths in the range of 0.09 micron to 0.15 micron.

3. The array of pixels defined in claim 1 , wherein the vertical dielectric walls each have a height in the range of 0.4 micron to 1.0 micron.

4. An array of pixels, comprising:

a substrate having an array of photodiodes;

an array of color filters over the array of photodiodes; and

vertical dielectric walls between the color filters, wherein the dielectric walls do not extend over the color filters, wherein the array of photodiodes has a center, and wherein the widths of the dielectric walls increases with increasing distance from the center of the array of photodiodes.

5. The array of pixels defined in claim 4 , wherein the vertical dielectric walls each have widths in the range of 0.09 micron to 0.15 micron.

6. The array of pixels defined in claim 4 , wherein the vertical dielectric walls each have a height in the range of 0.4 micron to 1.0 micron.

Assignments (7)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 18, 2014
From: APTINA IMAGING CORPORATION
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 034673/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 18, 2012
From: MICRON TECHNOLOGY, INC.
To: APTINA IMAGING CORPORATION
Reel/Frame 028070/0548 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 18, 2012
From: MACKEY, JEFFREY; BOETTIGER, ULRICH; FORD, LORISTON; HOLSCHER, RICK; MOONEY, MITCHELL J.; VAARTSTRA, BRIAN
To: APTINA IMAGING CORPORATION
Reel/Frame 028068/0850 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 18, 2012
From: CICHOCKI, MATTIA
To: MICRON TECHNOLOGY INC.
Reel/Frame 028068/0913 →