Compositions comprising base-reactive component and processes for photolithography
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
1. A method for processing a photoresist composition, comprising:
a) applying on a substrate a photoresist composition comprising:
(i) one or more resins,
(ii) a photoactive component, and
(iii) one or more materials distinct from the one or more resins and that comprise (A) one or more base reactive groups and (B) one or more nitro or sulfoxide groups that are in addition to and distinct from one or more base reactive groups;
wherein the (A) one or more base reactive groups and the (B) nitro or sulfoxide groups are present on the same resin repeat unit, wherein the one or more materials (iii) comprise photoacid-labile groups; and
b) immersion exposing the applied photoresist layer to radiation activating for the photoresist composition.
2. The method of claim 1 wherein the one or more materials (iii) comprise one or more acid groups that are in addition to and distinct from one or more base reactive groups.
3. The method of claim 1 wherein the one or more materials (iii) comprise one or more photoacid-labile groups that are in addition to and distinct from the one or more base reactive groups.
4. The method of claim 1 further comprising developing the exposed photoresist layer with aqueous alkaline developer whereby the one or more base-reactive groups undergo a bond-breaking reaction to provide one or more polar groups.
5. The method of claim 4 wherein the photoresist layer prior to
development has a water contact receding angle of in excess of 40°, and the photoresist layer after development has a water contact receding angle of less than 30°.
6. The method of claim 1 wherein the one or more materials (iii) comprise groups that react with aqueous alkaline developer to provide hydroxyl or sulfonic acid groups.
7. The method of claim 1 wherein the photoacid-labile groups comprise ester photoacid-labile moieties.
8. The method of claim 1 wherein one or more base reactive groups are fluorinated.
9. The method of claim 1 wherein one or more base reactive groups are fluorinated but not perfluorinated.
10. A method for processing a photoresist composition, comprising:
a) applying on a substrate a photoresist composition comprising:
(i) one or more resins,
(ii) a photoactive component, and
(iii) one or more materials distinct from the one or more resins and that comprise one or more base reactive groups derived from the following monomer:
and
b) immersion exposing the applied photoresist layer to radiation activating for the photoresist composition.
11. The method of claim 10 wherein the (iii) one or more materials further comprise photoacid-labile groups.
12. The method of claim 10 wherein the (iii) one or more materials are resins.