Method of sealing an air gap in a layer of a semiconductor structure and semiconductor structure
View Patent ↗Providing a first layer of a semiconductor structure having at least one air gap between conductive lines formed in the first layer. The air gap extends into the first layer from a first surface of the first layer. A barrier dielectric material over the first surface and the air gap is selected to have a dielectric constant less than 3.5 and to provide a barrier to prevent chemicals entering the at least one air gap. An air gap can extend from a first surface of the first layer to at least a portion of side surfaces of the at least two conductive lines to expose at least a portion of the side surfaces.
1. A semiconductor device structure comprising:
a first layer having at least one air gap for providing isolation between at least two conductive lines formed in the first layer, the at least one air gap extending into the first layer from a first surface of the first layer;
a first dielectric layer over the first surface of the first layer, the first dielectric layer closes the at least one air gap;
a barrier layer of a first barrier dielectric material over the first dielectric layer that is conformal, the barrier layer having a thickness in the range of 1-10 nm, a dielectric constant less than 3.5, and is a barrier that prevents chemicals entering the at least one air gap; and
a second dielectric layer over the barrier layer having at least one air gap for providing isolation between at least two conductive lines formed in the second dielectric layer.
2. The structure of claim 1 , wherein the first barrier dielectric material is a non-porous material.
3. The structure of claim 1 , wherein the first barrier dielectric material is one of the following:
fluorine doped silicon dioxide;
carbon doped silicon dioxide;
organic polymeric dielectrics;
parylene;
amorphous carbon;
hydrogenated carbon (a-H:C);
fluorinated amorphous carbon (a-F:C)n.
4. The structure of claim 1 , wherein the at least one air gap of the first layer extends to the at least two conductive lines to expose surfaces of the at least two conductive lines formed in the first layer, the structure further comprising a second barrier layer of a second barrier dielectric material over the exposed surfaces of each of the at least two conductive lines.
5. The structure of claim 4 , wherein the second barrier dielectric material has a dielectric constant less than 3.5 and provides a barrier to prevent chemicals contacting the at least two conductive lines.
6. The structure of claim 4 , wherein the second barrier dielectric material is a non-porous material.
7. The structure of claim 4 , wherein the second barrier layer has a thickness in the range of 1-10 nm.
8. A semiconductor device structure comprising:
a first layer having at least one air gap for providing isolation between at least two conductive lines formed in the first layer, the at least one air gap extending into the first layer from a first surface of the first layer, and extending to the at least two conductive lines to expose surfaces of the at least two conductive lines;
a first barrier layer of a first barrier dielectric material over the exposed surfaces of each of the at least two conductive lines;
a dielectric layer over the first surface of the first layer that closes the at least one air gap, the first barrier layer between the at least two conductive lines and the dielectric layer;
a second barrier layer of a second barrier dielectric material over the dielectric layer that is conformal to the dielectric layer, the second barrier layer having a thickness in the range of 1-10 nm, the second barrier dielectric material having a dielectric constant less than 3.5, wherein the second barrier dielectric material prevents chemicals entering the at least one air gap; and
wherein the first barrier dielectric material is one of the following:
fluorine doped silicon dioxide;
carbon doped silicon dioxide;
organic polymeric dielectrics;
parylene;
amorphous carbon;
hydrogenated carbon (a-H:C);
fluorinated amorphous carbon (a-F:C)n.
9. A semiconductor device structure comprising:
a first layer of the semiconductor device structure having at least one air gap that isolates at least two conductive lines formed in the first layer, the at least one air gap extending into the first layer from a first surface of the first layer, and extending to the at least two conductive lines to expose surfaces of the at least two conductive lines;
a first barrier layer of a first barrier dielectric material over the exposed surfaces of each of the at least two conductive lines;
a dielectric layer on the first surface of the first layer such that the dielectric layer closes the at least one air gap, the first barrier layer between the at least two conductive lines and the dielectric layer; and
a second barrier layer of a second barrier dielectric material over the dielectric layer that is conformal to the dielectric layer, the second barrier layer having a thickness in the range of 1-10 nm, the second barrier dielectric material being selected to have a dielectric constant less than 3.5 and to provide a barrier that prevents chemicals from entering the at least one air gap,
wherein the second barrier dielectric material and the first barrier dielectric material are the same.
10. The structure of claim 5 , wherein the first layer comprises:
a second dielectric layer having at the least two conductive lines formed in the first dielectric layer; and
the at least one air gap being in the second dielectric layer and extending from the first surface of the second dielectric layer into the second dielectric layer and extending to at least a portion of side surfaces of the at least two conductive lines to expose at least portions of the side surfaces, and
wherein the second barrier layer is conformal to the side surfaces of the at least two conductive lines through the at least one air gap.
11. The structure of claim 10 , wherein the at least one air gap is defined by exposed surfaces of the second dielectric layer extending from the first surface and wherein the second barrier layer is on the exposed surfaces of the first dielectric layer.
12. The structure of claim 10 , wherein each of the at least two conductive lines have a top surface which is substantially in the same plane as the first surface of the second dielectric layer, wherein a second barrier layer is over at least a portion of the top surfaces of at least one of the at least two conductive lines.
13. The structure of claim 1 , wherein the barrier dielectric material is one of the following:
fluorine doped silicon dioxide;
carbon doped silicon dioxide;
organic polymeric dielectrics;
parylene;
amorphous carbon;
hydrogenated carbon (a-H:C);
fluorinated amorphous carbon (a-F:C)n.
14. The structure of claim 1 , wherein the at least one air gap extends to the at least two conductive lines to expose surfaces of the at least two conductive lines, the structure further comprising a second barrier layer of a second barrier dielectric material over the exposed surfaces of each of the at least two conductive lines.
15. The structure of claim 5 , wherein the second barrier layer has a thickness in the range of 1-10 nm.
16. The structure of claim 1 , wherein the second barrier dielectric material is one of the following:
fluorine doped silicon dioxide;
carbon doped silicon dioxide;
organic polymeric dielectrics;
parylene;
amorphous carbon;
hydrogenated carbon (a-H:C);
fluorinated amorphous carbon (a-F:C)n.
17. The structure of claim 9 , wherein the first barrier dielectric material has a dielectric constant less than 3.5 and provides a barrier that prevents chemicals contacting the at least two conductive lines.
18. The structure of claim 9 , wherein the first barrier dielectric material is a non-porous material.
19. The structure of claim 9 , wherein the first barrier layer has a thickness in the range of 1-10 nm.
20. The structure of claim 8 , wherein the first barrier dielectric material has a dielectric constant less than 3.5 and provides a barrier that prevents chemicals contacting the at least two conductive lines.