IP Library Granted Patent US 8,513,042
Granted Patent B2
US 8,513,042 · App. 13/320,579 · Granted Aug 20, 2013

Method of forming an electromechanical transducer device

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Quick Facts
Patent No.
US 8,513,042
App. No.
13/320,579
Granted
Aug 20, 2013
Kind
B2
Abstract

A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.

Claims (21)

1. A method of forming an electromechanical transducer device comprising:

forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure;

providing a stress trimming layer on at least part of the movable structure;

after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device; and

after releasing the movable structure, changing stress in the stress trimming layer of the released electromechanical transducer device by performing a stress trimming anneal according to an anneal parameter determined in response to an amount of deflection of the released movable structure relative to the fixed structure, such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.

2. The method of claim 1 , wherein determining a value for the anneal parameter comprises:

measuring, after releasing the movable structure and before performing the stress trimming anneal, the amount of deflection of the released movable structure relative to the fixed structure;

determining a difference between the measured amount of deflection and the predetermined amount of deflection; and

determining a value for the anneal parameter for deflecting the released movable structure by the determined difference amount.

3. The method of claim 2 , further comprising determining a level of stress of the stress trimming layer for deflecting the released movable structure by the determined difference and wherein the determining the value for the anneal parameter comprises determining the value for the anneal parameter corresponding to the determined level of stress.

4. The method of claim 1 , further comprising performing, prior to providing the stress trimming layer, a second anneal of the movable structure and the actuating structure formed on the fixed structure according to a second anneal parameter having a second predetermined value.

5. The method of claim 4 , wherein the second predetermined value is greater than the anneal parameter for the stress trimming anneal performed on the released electromechanical transducer device.

6. The method of claim 2 , wherein the anneal parameter is at least one of temperature and time.

7. The method of claim 6 , wherein the anneal parameter is temperature and wherein the stress trimming layer is arranged such that a value for the anneal temperature is in a range of values greater than a maximum temperature value required for subsequent processing or operation of the electromechanical transducer device and less than a maximum temperature value required to ensure no or insignificant change to stress in other layers of the electromechanical transducer device.

8. The method of claim 7 , further comprising performing an additional anneal on the electromechanical transducer device before releasing the movable structure at a temperature having a value corresponding to a minimum value of the range of values for the anneal temperature.

9. The method of claim 6 , wherein the anneal parameter is temperature and wherein a thickness of the stress trimming layer is arranged such that a value for the anneal temperature is in a range corresponding to a range of deflection amounts that is larger than a range of deflection amounts required for the determined difference amount.

10. The method of claim 1 , further comprising providing a heater on or as part of the movable structure, wherein the step of performing a stress trimming anneal comprises performing the stress trimming anneal using the heater.

11. The method of claim 10 , wherein the heater is formed from the stress trimming layer.

12. The method of claim 1 , wherein forming on the fixed structure a movable structure and an actuating structure of the electromechanical transducer device comprises forming a plurality of electromechanical transducer devices on a substrate comprising a movable structure and an actuating structure, and the method further comprises after performing the stress trimming anneal of the released electromechanical transducer devices, cutting the substrate to provide a plurality of separated electromechanical transducer devices.

13. The method of claim 1 , wherein forming on the fixed structure a movable structure and an actuating structure of the electromechanical transducer device comprises forming a plurality of electromechanical transducer devices on a substrate comprising a movable structure and an actuating structure, and the method further comprises after releasing the movable structure, cutting the substrate to provide a plurality of separated electromechanical transducer devices.

14. The method of claim 1 , wherein the predetermined amount includes a predetermined range of deflection values relative to a plane parallel to a surface of the fixed structure.

Assignments (30)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0447 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0379 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0439 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE FREESCALE SEMICONDUCTOR, INC. PREVIOUSLY RECORDED ON REEL 027227 FRAME 0152. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNEES ARE FREESCALE SEMICONDUCTOR, INC. AND COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (CEA). Recorded Feb 20, 2013
From: PERRUCHOT, FRANCOIS; LIU, LIANJUN; PACHECO, SERGIO; DEFAY, EMMANUEL; REY, PATRICE
To: FREESCALE SEMICONDUCTOR, INC.; COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (CEA)
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SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Mar 7, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Mar 7, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Mar 7, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 15, 2011
From: PERRUCHOT, FRANCOIS; LIU, LIANJUN; PACHECO, SERGIO; DEFAY, EMMANUEL; REY, PATRICE
To: FREESCALE SEMICONDUCTOR INC
Reel/Frame 027227/0152 →