IP Library Granted Patent US 8,962,390
Granted Patent B2
US 8,962,390 · App. 13/327,491 · Granted Feb 24, 2015

Method for manufacturing a chip packaging structure

Inventor: Diann-Fang Lin (Miao-Li, TW)
Assignee: Dawning Leading Technology Inc.
H01L25/16H01L24/49H01L25/0657H01L2224/48091H01L2224/48145H01L2224/48227H01L2224/48228H01L2924/15311H01L2224/49H01L2224/32145H01L2224/32225H01L2224/73265H01L23/3121H01L24/16H01L24/48H01L24/73H01L2223/6677H01L2224/48265H01L2225/0651H01L2924/19041H01L2924/19042H01L2924/19104H01L2225/06506H01L2225/06568H01L2224/16237
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Quick Facts
Patent No.
US 8,962,390
App. No.
13/327,491
Granted
Feb 24, 2015
Kind
B2
Abstract

A method for manufacturing a chip packaging structure is disclosed. The manufacturing method includes steps of: providing a protection layer; forming a conductive trace layer on the protection layer; forming an adhesion layer on the conductive trace layer; placing a chip on the adhesion layer; and electrically connecting the chip to the conductive trace layer. Via these arrangements, the chip packaging structure made by the manufacturing method can have a smaller thickness.

Claims (33)

1. A method for manufacturing a chip packaging structure, comprising:

providing a protection layer;

forming a conductive trace layer on the protection layer;

forming an adhesion layer on the conductive trace layer;

removing a part of the adhesion layer to form at least one through hole in the adhesion layer, so that an upper surface of the conductive trace layer is partly exposed through the through hole;

disposing at least one metal bump in the through hole to be in contact with the conductive trace layer after the formation of the through hole;

placing a chip on the adhesion layer to be in contact with the metal bump being disposed in the through hole;

electrically connecting the chip to the conductive trace layer through the metal bump in the through hole;

placing a transfer element on top of the chip;

electrically connecting the chip and the transfer element;

utilizing an encapsulation to encapsulate the chip, the adhesion layer, the conductive trace layer and the transfer element; and

removing the entire protection layer.

2. The method of claim 1 , wherein the adhesion layer is directly formed on the conductive trace layer to be in contact with the conductive trace layer.

3. The method of claim 1 , further comprising:

forming an insulation layer on the conductive trace layer; and

forming the adhesion layer on the insulation layer.

4. The method of claim 1 , wherein the adhesion layer is formed on a part of the conductive trace layer.

5. The method of claim 1 , wherein the step of forming a conductive trace layer on the protection layer further comprises:

forming a metal layer on the protection layer; and

removing a part of the metal layer to form the conductive trace layer.

6. A method for manufacturing a chip packaging structure, comprising:

providing a protection layer;

forming a conductive trace layer on the protection layer;

forming an adhesion layer on the conductive trace layer;

removing a part of the adhesion layer to form at least one through hole in the adhesion layer, so that an upper surface of the conductive trace layer is partly exposed through the through hole;

disposing at least one metal bump in the through hole to be in contact with the conductive trace layer after the formation of the through hole;

placing a chip on the adhesion layer to be in contact with the metal bump being disposed in the through hole;

electrically connecting the chip to the conductive trace layer through the metal bump in the through hole;

placing a transfer element on top of the chip;

electrically connecting the chip and the transfer element;

utilizing an encapsulation to encapsulate the chip, the adhesion layer, the conductive trace layer and the transfer element; and

removing a part of the protection layer to form at least one through hole in the protection layer, so that a lower surface of the conductive trace layer is partly exposed from the through hole of the protection layer.

7. The method of claim 6 , further comprising: disposing at least one conductive material or metal bump in the through hole of the protection layer to be in contact with the conductive trace layer.

Assignments (2)
MERGER Recorded Mar 11, 2019
From: DAWNING LEADING TECHNOLOGY INC.
To: KING YUAN ELECTRONICS CO., LTD.
Reel/Frame 048567/0463 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 15, 2011
From: LIN, DIANN-FANG
To: DAWNING LEADING TECHNOLOGY INC.
Reel/Frame 027391/0174 →
Priority Claims (1)
TW 100132667 A · Sep 9, 2011 · national
Continuity (1)
Related Publication 20130065363A1 · Mar 14, 2013