Phase change random access memory and method for manufacturing the same

1. A phase change random access memory comprising:

a semiconductor substrate having a bottom electrode formed over the semiconductor substrate; and

a phase change layer formed over the bottom electrode, wherein the phase change layer includes

a first phase change layer formed over the bottom electrode and including at least one of a first element, a second element, and a third element; and

a second phase change layer formed over a surface of the first phase change layer and formed of the first element to prevent an area of the first phase change layer from increasing through diffusion.

2. The phase change random access memory according to claim 1 , wherein the first element is germanium (Ge), the second element is antimony (Sb) and the third element is tellurium (Te).

3. The phase change random access memory according to claim 1 , wherein the phase change layer is formed through chemical vapor deposition or atomic layer deposition.

4. The phase change random access memory according to claim 1 , wherein the phase change layer is formed at a low temperature equal to or lower than 200° C.

5. A phase change random access memory comprising:

a semiconductor substrate having a bottom electrode formed over the semiconductor substrate; and

a phase change layer formed over the bottom electrode, wherein the phase change layer includes

a first phase change layer formed over the bottom electrode and including any one of a binary compound of a first element and a second element, a binary compound of the first element and a third element, and a binary compound of the second element and the third element; and

a second phase change layer formed over a surface of the first phase change layer and including a binary compound of the first element and the second element or a binary compound of the first element and the third element, wherein the ratio of the first element in the second phase change layer is such that an area of the first phase change layer is prevented from increasing through diffusion.

6. The phase change random access memory according to claim 5 , wherein the first element is germanium (Ge), the second element is antimony (Sb) and the third element is tellurium (Te).

7. The phase change random access memory according to claim 5 , wherein, when each of the first phase change layer and the second phase change layer is formed of the binary compound of the first element and the second element, the first element has a composition ratio of 0.1 to 0.9 in the phase change layer.

8. The phase change random access memory according to claim 5 , wherein, when each of the first phase change layer and the second phase change layer is formed of the binary compound of the first element and the third element, the first element has a composition ratio of 0.5 to 0.9 in the phase change layer.

9. The phase change random access memory according to claim 5 , wherein, when the first phase change layer is formed of the binary compound of the second element and the third element, the is second element has a composition ratio of 0.4 to 0.9 in the first phase change layer.

10. The phase change random access memory according to claim 5 , wherein the phase change layer is formed through chemical vapor deposition or atomic layer deposition.

11. The phase change random access memory according to claim 5 , wherein the phase change layer is formed at a low temperature equal to or lower than 200° C.

12. A phase change random access memory comprising:

a semiconductor substrate having a bottom electrode formed over the semiconductor substrate; and

a phase change layer formed over the bottom electrode, wherein the phase change layer includes

a first phase change layer formed over the bottom electrode and including a ternary compound of a first element, a second element and a third element; and

a second phase change layer formed over a surface of the first phase change layer and formed of a ternary compound of the first element, the second element and the third element, wherein the ratio of the first element is such that an area of the first phase change layer is prevented from increasing through diffusion.

13. The phase change random access memory according to claim 12 , wherein the first element is germanium (Ge), the second element is antimony (Sb) and the third element is tellurium (Te).

14. The phase change random access memory according to claim 12 , wherein, when each of the first phase change layer and the second phase change layer is formed of the ternary compound of the first element, the second element and the third element, the first element has a composition ratio of 0.01 to 0.5 in the phase change layer, the second element has a composition ratio of 0.1 to 0.9 in the phase change layer, and the third element has a composition ratio of 0.1 to 0.6 in the phase change layer.