Wafer processing with carrier extension
View Patent ↗Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.
1. A reactor comprising:
(a) a chamber having a wall structure defining an interior surface, and a wafer carrier having a top surface disposed in the chamber, the wafer carrier defining an outwardly-facing edge surface facing away from an upstream-to-downstream axis;
(b) a spindle disposed within the chamber and rotatable about the upstream-to-downstream axis, the spindle being adapted to support the wafer carrier for rotation about the axis so that the top surface of the wafer carrier faces in an upstream direction at a carrier location;
(c) a ring mounted within the chamber, the ring having a top surface facing in the upstream direction, the ring defining an inwardly-facing edge surface facing towards the upstream-to-downstream axis, the ring being constructed and arranged so that when the reactor is in an operative condition, the ring closely surrounds the wafer carrier supported on the spindle and the top surface of the ring is substantially coplanar with the top surface of the wafer carrier;
(d) an inner gap formed between the ring and the wafer carrier at the inwardly and outwardly facing edge surfaces, respectively, such that the ring and the wafer carrier are spaced apart from one another by the inner gap when the reactor is in the operative condition, the inner gap being a substantially gas-tight interface configured to permit a small amount of gas therethrough, the inner gap being about 2 mm wide or less, such that the small amount of the gas being less than about five percent (5%) of a total volume of gas passing over the top surface of the wafer carrier; and
(e) a gas inlet element communicating with the chamber upstream of the carrier location and a gas exhaust communicating with the chamber downstream of the carrier location, the ring having a peripheral surface facing outwardly away from the upstream-to-downstream axis, the ring being arranged so that, when the reactor is in the operative condition, there is an outer gap between the peripheral surface of the ring and the interior surface of the chamber, the outer gap configured to permit a remainder of the gas therethrough that passes over the top surface of the ring and does not pass through the inner gap.
2. A reactor as claimed in claim 1 further comprising a heater within the chamber, the heater being adapted to heat the wafer carrier supported on the spindle.
3. A reactor as claimed in claim 1 wherein the ring defines a hollow space below the top surface of the ring.
4. A reactor as claimed in claim 1 wherein the ring is formed from a plurality of concentric rings.
5. A reactor as claimed in claim 4 wherein each of the concentric rings is comprised of the same or different material.
6. A reactor as claimed in claim 4 wherein at least one of the plurality of concentric rings includes a heating element.
7. A reactor as claimed in claim 1 wherein the ring acts as an insulator for heat generated by a heater included in the chamber.
8. A reactor as claimed in claim 1 wherein the top surface of the ring comprises at least one orifice for introducing a gas into the chamber.
9. A reactor as claimed in claim 1 wherein the top surface of the ring forms a portion of a cone concentric with the axis.
10. A reactor as claimed in claim 1 wherein the ring has an inner surface facing towards the axis and a peripheral surface facing away from the axis, and the top surface of the ring includes a vertical rise between the inner and peripheral surfaces.
11. A reactor as claimed in claim 10 wherein the top surface of the ring is sloped upwardly in a direction facing away from the axis.
12. A reactor as claimed in claim 1 wherein the top surface of the ring is upwardly sloping and is provided as a surface of revolution of a curved generatrix about the axis.
13. A reactor as claimed in claim 1 wherein
wherein the top surface of the ring is sloped upwardly in a direction facing away from the upstream-to-downstream axis.
14. A reactor as claimed in claim 13 wherein the top surface of the ring is provided as a surface of revolution of a curved generatrix about the axis.
15. A reactor as claimed in claim 14 wherein the top surface of the ring forms a portion of a cone concentric with the axis.
16. A reactor as claimed in claim 1 wherein the spindle is adapted to releasably engage the wafer carrier and the chamber has an opening for insertion and removal of wafer carriers.
17. A reactor as claimed in claim 16 wherein the chamber wall structure includes a fixed wall structure and the ring is movable relative to the fixed wall structure in the upstream and downstream directions.
18. A reactor as claimed in claim 17 wherein the chamber wall structure includes a shutter defining a portion of the interior surface, the shutter being movable in the upstream and downstream directions relative to the fixed wall structure of the chamber, and wherein a gap is defined between the peripheral surface of the ring and the shutter.
19. A reactor as claimed in claim 18 wherein the ring is attached to the shutter for movement therewith in the upstream and downstream directions.
20. A reactor as claimed in claim 18 wherein the shutter comprises at least one orifice for introducing a gas into the chamber.