IP Library Granted Patent US 8,214,729
Granted Patent B2
US 8,214,729 · App. 13/335,725 · Granted Jul 3, 2012

Error detecting/correcting scheme for memories

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Quick Facts
Patent No.
US 8,214,729
App. No.
13/335,725
Granted
Jul 3, 2012
Kind
B2
Abstract

A method for detecting and correcting errors in a memory having a read/write paradigm is presented. In these implementations, various approaches to detect errors on a per word or per group of words basis and correct errors on a per group of words or per page basis, respectively, in relation to a memory and its associated differing read/write operations, are provided. For instance, in one implementation, errors are detected on a per word basis and corrected on a per page basis for a NOR Flash Memory having differing read/write operations of reading on a per word basis and writing on a per page basis. Advantageously, benefits of the various implementations include reduced encoder/decoder complexities, reduced parity overhead requirements, and reduced performance degradation.

Claims (31)

1. A system comprising:

a memory array; and

an error detection and correction circuit configured to perform operations comprising:

determining a respective word error detecting bit for each of one or more words on a page of the memory array;

determining a page error detecting bit for the page;

reading a first word from the page;

detecting an error in the first word using the respective word error detecting bit;

correcting the error in the first word using the respective word error detecting bit and the page error detecting bit; and

writing the page with the corrected first word to the memory array.

2. The system of claim 1 , wherein the memory array is a NOR flash array.

3. The system of claim 1 , wherein determining the page error detecting bit comprises using an error detecting code and the words on the page and the word error detecting bits.

4. The system of claim 1 , wherein the error detection and correction circuit comprises an encoder configured to determine the word error detecting bits and the page error detecting bit.

5. The system of claim 1 , further comprising a word buffer, one or more parity buffers, and a parity encoder controlled by a parity encoder controller.

6. The system of claim 1 , the operations further comprising determining shared parity bits between the word error detecting bits and the page error detecting bit by combining the word error detecting bits with the page error detecting bit.

7. The system of claim 1 , wherein determining the word error detecting bits and the page error detecting bits comprises computing a product of a generator matrix and a page vector representing the page.

8. The system of claim 1 , wherein the generator matrix forms a Hamming Generator matrix, each row of the generator matrix being linearly independent from each other row.

9. A system comprising:

a memory array; and

an error detection and correction circuit configured to perform operations comprising:

specifying an address of one or more words to read on a page of the memory array;

computing an error detection signal being a first bit of a syndrome;

re-reading the page by re-reading each of the one or more words and determining a page parity for the page;

determining other bits of the syndrome for correcting the error; and

outputting a corrected word to the memory array.

10. The system of claim 9 , the operations further comprising idling the memory and entering a read mode for the memory.

11. The system of claim 9 , the operations further comprising generating an error detection and correcting code, wherein the code is generated in relation to a read operation and a write operation of the memory.

12. The system of claim 9 , the operations further comprising setting a read done signal to a high setting when the error detection signal is of a value of zero.

13. The system of claim 9 , wherein re-reading the page further comprises re-computing the page parity and storing the page parity in a recomputed page parity buffer.

14. The system of claim 9 , the operations further comprising automatically sending the syndrome for error extraction and correction.

15. The system of claim 9 , wherein the memory array is a NOR flash array.

16. The system of claim 9 , further comprising a syndrome register configured to latch the syndrome.

Assignments (8)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 9, 2024
From: SONRAI MEMORY LIMITED
To: NERA INNOVATIONS LIMITED
Reel/Frame 066778/0178 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2020
From: MICROCHIP TECHNOLOGY INC.; ATMEL CORPORATION; MICROSEMI CORPORATION
To: SONRAI MEMORY LIMITED
Reel/Frame 051799/0956 →
RELEASE OF SECURITY INTEREST Recorded Dec 21, 2019
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; ATMEL CORPORATION
Reel/Frame 051398/0809 →
RELEASE OF SECURITY INTEREST Recorded Dec 21, 2019
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; ATMEL CORPORATION
Reel/Frame 051398/0827 →
CHANGE OF NAME Recorded Dec 17, 2019
From: ATMEL ROUSSET S.A.S.
To: MICROCHIP TECHNOLOGY ROUSSET
Reel/Frame 051322/0775 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2019
From: MICROCHIP TECHNOLOGY ROUSSET
To: MICROCHIP TECHNOLOGY INCORPORATED
Reel/Frame 051303/0162 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 6, 2012
From: BENOIT, GODARD; DAGA, JEAN-MICHEL
To: ATMEL CORPORATION
Reel/Frame 027811/0065 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 6, 2012
From: ATMEL CORPORATION
To: ATMEL ROUSSET S.A.S.
Reel/Frame 027811/0134 →